公开(公告)号：US20210265437A1

公开(公告)日：2021-08-26

申请号：US17002696

申请日：2020-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Sewan Son ,  Moosoon Ko ,  Seokje Seong ,  Seongjun Lee ,  Jeongsoo Lee ,  Jiseon Lee ,  Changho Yi ,  Hyeri Cho

IPC: H01L27/32

Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

公开(公告)号：US20210005141A1

公开(公告)日：2021-01-07

申请号：US17024627

申请日：2020-09-17

Applicant: Samsung Display Co., Ltd.

Inventor： Juwon YOON ,  Iljeong LEE ,  Jiseon Lee ,  Choongyoul IM

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12

Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.