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公开(公告)号：US10050280B2
公开(公告)日：2018-08-14
申请号：US14551588
申请日：2014-11-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taeyoung Kim , Victor Roev , Kihyun Kim , Sangbok Ma , Minsik Park , Dongjoon Lee , Myungjin Lee , Dongmin Im , Wonsung Choi
Abstract: A composite electrode for a lithium air battery including: i) a polymerization product of a first heteroatom-containing ionic liquid or ii) a mixture of a second heteroatom-containing ionic liquid and a polymer ionic liquid represented by Formula 1:
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公开(公告)号：US09923407B2
公开(公告)日：2018-03-20
申请号：US15008932
申请日：2016-01-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mincheol Ha , Kang-Ho Byun , Kihyun Kim , Jihye Kim , Seho Park , Kumjong Sun , Wooram Lee
CPC classification number: H02J7/025 , H02J7/04 , H02J50/12 , H03K5/151 , H04B5/0031 , H04B5/0037 , H04B5/0075
Abstract: Various embodiments of the present disclosure relate to an apparatus and method for controlling a differential signal of a wireless power transmitter. For example, an apparatus for controlling a differential signal of a wireless power transmitter may include a converter configured to convert a single signal into differential signals; an amplifier operably coupled to the converter and configured amplify power of the differential signals, thereby providing amplified differential signals; a gauge operably coupled to the amplifier and configured to measure a phase difference and amplitude between the amplified differential signals; and a controller for converting a pulse width of the differential signals by controlling the converter according to measurements by the gauge. Further, various embodiments of the present disclosure also include other embodiments other than the aforementioned embodiments.
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公开(公告)号：US20170125868A1
公开(公告)日：2017-05-04
申请号：US15149445
申请日：2016-05-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kihyun Kim , Myungjin Lee , Heungchan Lee , Dongjoon Lee , Hyunpyo Lee , Dongmin Im
IPC: H01M12/06 , H01M10/0565 , H01M10/0525
Abstract: A polymer electrolyte including: a polymer matrix including a cross-linked fluorine-containing polymer; and a liquid electrolyte embedded in the polymer matrix.
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54.发明申请ELECTROLYTE, LITHIUM AIR BATTERY INCLUDING THE ELECTROLYTE, AND METHOD OF PREPARING THE ELECTROLYTE 审中-公开电解质，包含电解质的锂离子电池，以及制备电解质的方法公开(公告)号：US20170054190A1
公开(公告)日：2017-02-23
申请号：US15235258
申请日：2016-08-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunpyo Lee , Kihyun Kim , Dongjoon Lee , Minsik Park
IPC: H01M12/08 , H01M10/0565
CPC classification number: H01M12/08 , H01M10/0562 , H01M10/0565 , H01M2300/0082 , Y02E60/128
Abstract: An electrolyte including a polymer including a repeating unit represented by Formula 1 and a lithium salt. Also a lithium air battery and a method of preparing an electrolyte.
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公开(公告)号：US09245839B2
公开(公告)日：2016-01-26
申请号：US14027599
申请日：2013-09-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Soodoo Chae , Myoungbum Lee , HuiChang Moon , Hansoo Kim , JinGyun Kim , Kihyun Kim , Siyoung Choi , Hoosung Cho
IPC: H01L29/792 , H01L23/498 , H01L27/115
CPC classification number: H01L27/11582 , H01L23/49844 , H01L23/5226 , H01L23/535 , H01L27/11565 , H01L27/11575 , H01L27/11578 , H01L29/408 , H01L29/4234 , H01L2924/0002 , H01L2924/00
Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.
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Patent Agency Ranking
56.发明授权Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors 有权具有横向集成的地选择晶体管的垂直集成的非易失性存储器件公开(公告)号：US09202571B2
公开(公告)日：2015-12-01
申请号：US14272765
申请日：2014-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sunil Shim , Jaehun Jeong , Jaehoon Jang , Kihyun Kim
IPC: G11C11/34 , G11C16/04 , H01L27/115
CPC classification number: H01L27/11582 , G11C16/0408 , G11C16/0466 , G11C16/0483 , H01L27/11519 , H01L27/11551 , H01L27/11556 , H01L27/1157
Abstract: Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.
Abstract translation: 非易失性存储器件利用垂直堆叠的非易失性存储器单元串（例如，NAND型串），其可选择性地耦合到衬底内的公共源极线。 该选择耦合可以由具有不同阈值电压的横向接地选择晶体管提供，这些阈值电压考虑了非垂直堆叠的非易失性存储单元串与公共源极线之间的不同横向间隔。
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57.发明授权Polymer, a method of preparing the same, composite prepared from the polymer, and electrode and composite membrane each including the polymer or the composite 有权聚合物，其制备方法，由聚合物制备的复合材料，以及各自包含聚合物或复合材料的电极和复合膜公开(公告)号：US09112203B2
公开(公告)日：2015-08-18
申请号：US14067288
申请日：2013-10-30
Inventor： Ki-hyun Kim , Pil-won Heo , Chan-ho Pak , Jong-chan Lee , Kihyun Kim , Sung-kon Kim
CPC classification number: H01M8/1027 , C08G75/23 , C08G79/04 , H01M4/622 , H01M8/1032 , H01M8/1034 , H01M2008/1095 , H01M2300/0082 , Y02E60/521
Abstract: A polymer comprising a first repeating unit represented by Formula 1: wherein R1 to R13 and Ar1 in Formula 1 are defined in the specification.
Abstract translation: 包含由式1表示的第一重复单元的聚合物：其中式1中的R 1至R 13和Ar 1在说明书中定义。
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58.发明授权Three-dimensional nonvolatile memory devices including interposed floating gates 有权三维非易失性存储器件包括插入的浮动栅极公开(公告)号：US09105736B2
公开(公告)日：2015-08-11
申请号：US14164408
申请日：2014-01-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byoungkeun Son , Hansoo Kim , Jinho Kim , Kihyun Kim
IPC: H01L29/66 , H01L21/8238 , H01L29/788 , H01L29/423 , H01L29/78 , H01L27/115
CPC classification number: H01L21/28 , H01L27/11519 , H01L27/11551 , H01L27/11553 , H01L27/11556 , H01L27/11582 , H01L29/42324 , H01L29/42364 , H01L29/66666 , H01L29/66825 , H01L29/7827 , H01L29/7841 , H01L29/788 , H01L29/7883 , H01L29/7889
Abstract: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.
Abstract translation: 提供三维非易失性存储器件及其制造方法。 存储器件包括穿透层间绝缘层的半导体柱和交替层叠在衬底上并电连接到衬底的导电层和选择性地插入在半导体柱和导电层之间的浮置栅。 浮动栅极形成在导电层中的凹部中。
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59.发明申请THREE-DIMENSIONAL NONVOLATILE MEMORY DEVICES INCLUDING INTERPOSED FLOATING GATES 审中-公开三维非易失性存储器件，包括插入的浮动门公开(公告)号：US20150145016A1
公开(公告)日：2015-05-28
申请号：US14614908
申请日：2015-02-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Byoungkeun Son , Hansoo Kim , Jinho Kim , Kihyun Kim
IPC: H01L29/788 , H01L27/115
CPC classification number: H01L21/28 , H01L27/11519 , H01L27/11551 , H01L27/11553 , H01L27/11556 , H01L27/11582 , H01L29/42324 , H01L29/42364 , H01L29/66666 , H01L29/66825 , H01L29/7827 , H01L29/7841 , H01L29/788 , H01L29/7883 , H01L29/7889
Abstract: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.
Abstract translation: 提供三维非易失性存储器件及其制造方法。 存储器件包括穿透层间绝缘层的半导体柱和交替层叠在衬底上并电连接到衬底的导电层和选择性地插入在半导体柱和导电层之间的浮置栅。 浮动栅极形成在导电层中的凹部中。
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60.发明授权Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein 有权在其中具有垂直集成的非易失性存储单元子串的非易失性存储器件公开(公告)号：US09000508B2
公开(公告)日：2015-04-07
申请号：US14024844
申请日：2013-09-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changhyun Lee , Sunhil Shim , Jaehoon Jang , Sunghoi Hur , Hansoo Kim , Kihyun Kim
IPC: H01L29/66 , H01L29/78 , H01L29/792 , G11C16/28 , H01L27/115 , H01L29/788
CPC classification number: G11C16/28 , G11C16/14 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/7889 , H01L29/7926
Abstract: Nonvolatile memory devices according to embodiments of the invention include highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.
Abstract translation: 根据本发明的实施例的非易失性存储器件包括高度集成的非易失性存储器单元的垂直堆叠。 这些垂直堆叠的存储器单元可以利用虚拟存储器单元来补偿当相对大量的存储单元垂直地堆叠在半导体衬底上时使用电连接的多个垂直子串的过程伪像，否则会产生相对较差的功能性存储单元串 系列。
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