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    Semiconductor device having gate structure
    51.
    发明授权
    Semiconductor device having gate structure 有权

    公开(公告)号：US10319641B2

    公开(公告)日：2019-06-11

    申请号：US16127241

    申请日：2018-09-11

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： En-Chiuan Liou ,  Chao-Hung Lin ,  Yu-Cheng Tung

    IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L21/308 ,  H01L29/06 ,  H01L21/28 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate, a first insulating structure and a gate structure. The substrate includes at least two fin structures protruding from a top surface of the substrate, the substrate includes a first recess and a second recess under the first recess, and the first recess and the second recess are disposed between the fin structures, in which a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure. The first insulating structure fills the second recess. The gate structure is disposed on the first insulating structure, in which the first recess and the second recess are filled up with the gate structure and the first insulating structure.

    Method of forming semiconductor device
    52.
    发明授权
    Method of forming semiconductor device 有权

    公开(公告)号：US10256146B2

    公开(公告)日：2019-04-09

    申请号：US15871037

    申请日：2018-01-14

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yu-Hsiang Hung ,  Ssu-I Fu ,  Chao-Hung Lin ,  Chih-Kai Hsu ,  Jyh-Shyang Jenq

    IPC: H01L21/76 ,  H01L23/535 ,  H01L27/11 ,  H01L21/768 ,  H01L21/033 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L49/02

    Abstract: A semiconductor device and method of forming the same, the semiconductor device includes a first and second fin shaped structures, a first and second gate structures and a first and second plugs. The first and second fin shaped structures are disposed on a first region and a second region of a substrate and the first and second gate structure are disposed across the first and second fin shaped structures, respectively. A dielectric layer is disposed on the substrate, covering the first and second gate structure. The first and second plugs are disposed in the dielectric layer, wherein the first plug is electrically connected first source/drain regions adjacent to the first gate structure and contacts sidewalls of the first gate structure, and the second plug is electrically connected to second source/drain regions adjacent to the second gate structure and not contacting sidewalls of the second gate structure.

    SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE
    54.
    发明申请
    SEMICONDUCTOR DEVICE HAVING GATE STRUCTURE 审中-公开

    公开(公告)号：US20180374757A1

    公开(公告)日：2018-12-27

    申请号：US16127241

    申请日：2018-09-11

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： En-Chiuan Liou ,  Chao-Hung Lin ,  Yu-Cheng Tung

    IPC: H01L21/8234 ,  H01L29/06 ,  H01L27/088 ,  H01L21/28 ,  H01L21/762 ,  H01L21/308

    Abstract: A semiconductor device includes a substrate, a first insulating structure and a gate structure. The substrate includes at least two fin structures protruding from a top surface of the substrate, the substrate includes a first recess and a second recess under the first recess, and the first recess and the second recess are disposed between the fin structures, in which a width of the first recess is larger than a width of the second recess, and the first recess and the second recess form a step structure. The first insulating structure fills the second recess. The gate structure is disposed on the first insulating structure, in which the first recess and the second recess are filled up with the gate structure and the first insulating structure.

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