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    DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE
    51.
    发明申请
    DOMAIN WALL ASSISTED SPIN TORQUE TRANSFER MAGNETRESISTIVE RANDOM ACCESS MEMORY STRUCTURE 有权
    域壁辅助转子扭矩传递磁阻随机访问存储器结构

    公开(公告)号：US20120068279A1

    公开(公告)日：2012-03-22

    申请号：US12884351

    申请日：2010-09-17

    Applicant: Chih-Huang Lai ,  Sheng-Huang Huang ,  Kuo-Feng Huang ,  Ming-Te Liu ,  Chun-Jung Lin ,  Ya-Chen Kao ,  Wen-Cheng Chen

    Inventor： Chih-Huang Lai ,  Sheng-Huang Huang ,  Kuo-Feng Huang ,  Ming-Te Liu ,  Chun-Jung Lin ,  Ya-Chen Kao ,  Wen-Cheng Chen

    IPC: H01L29/82 ,  H01L21/02

    CPC classification number: H01L43/12 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228 ,  H01L43/08

    Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.

    Abstract translation: 半导体存储器件包括磁性固定并位于衬底的第一区域内的第一铁磁层; 第二铁磁层近似第一铁磁层; 以及介于所述第一铁磁层与所述第二铁磁层的所述第一部分之间的阻挡层。 第二铁磁层包括无磁性的第一部分，并且位于第一区域内; 第二部分，磁性地固定在第一方向上并且位于所述基板的第二区域内，所述第二区域从所述第一侧面接触所述第一区域; 以及第三部分，其磁性地固定到第二方向并且位于所述基板的第三区域内，所述第三区域从所述第二侧面接触所述第一区域。

    Rotor and manufacturing method thereof
    53.
    发明申请
    Rotor and manufacturing method thereof 审中-公开
    转子及其制造方法

    公开(公告)号：US20070274834A1

    公开(公告)日：2007-11-29

    申请号：US11797858

    申请日：2007-05-08

    Applicant: Wen-Shi Huang ,  Lee-Long Chen ,  Chun-Hua Yang ,  Wen-Cheng Chen

    Inventor： Wen-Shi Huang ,  Lee-Long Chen ,  Chun-Hua Yang ,  Wen-Cheng Chen

    IPC: F04D29/34

    CPC classification number: F04D29/2233

    Abstract: A manufacturing method of a rotor includes the following steps. A substrate is processed to form a first patterned area, a second patterned area and a third patterned area. The second patterned area is formed around the first patterned area, and the third patterned area is connected to the second patterned area. The first patterned area is processed to form a case. The third patterned area is bent towards the case along a joint line between the second patterned area and the third patterned area to form the blades. The rotor includes a case, a connecting portion and the blades. The case is cylindrical and has a sidewall. The connecting portion is extended from one end of the sidewall of the case. The blades are extended from the connecting portion.

    Abstract translation: 转子的制造方法包括以下步骤。 处理衬底以形成第一图案化区域，第二图案区域和第三图案化区域。 第二图案化区域围绕第一图案化区域形成，并且第三图案化区域连接到第二图案化区域。 第一图案区域被处理以形成壳体。 第三图案区域沿着第二图案化区域和第三图案化区域之间的关节线向壳体弯曲以形成刀片。 转子包括壳体，连接部分和叶片。 壳体是圆柱形的并且具有侧壁。 连接部分从壳体的侧壁的一端延伸。 叶片从连接部分延伸。

    Shaving head assembly for a lint shaver
    58.
    发明授权
    Shaving head assembly for a lint shaver 失效
    剃须刀头组件为一个棉绒剃须刀

    公开(公告)号：US06941662B2

    公开(公告)日：2005-09-13

    申请号：US10979495

    申请日：2004-11-01

    Applicant: Wen-Cheng Chen

    Inventor： Wen-Cheng Chen

    IPC: D06C13/00 ,  A47L25/08 ,  B26B19/14 ,  B26B19/28 ,  B26B19/44 ,  B26B19/16

    CPC classification number: A47L25/08 ,  B26B19/14 ,  B26B19/44

    Abstract: A shaving head assembly for a lint shaver includes a transmission shaft rotatably received inside the casing and having a V-shaped cutout defined in a distal end of the transmission shaft. The blade assembly has a blade seat with a V-shaped extension extending from a bottom of the blade seat to be securely received in the V-shaped cutout yet movable relative to the transmission shaft so that the blade seat is able to move upward and downward relative to the transmission shaft. A rotor is fixedly connected to a free end of the transmission shaft and rotatably received in the casing.

    Abstract translation: 用于棉绒剃须器的剃须刀头组件包括传动轴，其可旋转地容纳在壳体内并且具有限定在传动轴的远端中的V形切口。 叶片组件具有叶片座，其具有从叶片座的底部延伸的V形延伸部，以被牢固地容纳在V形切口中，而相对于传动轴可移动，使得叶片座能够向上和向下移动 相对于传动轴。 转子固定地连接到传动轴的自由端并可旋转地容纳在壳体中。

    Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM process
    60.
    发明授权
    Method to define poly dog-bone for word line strapping contact at stitch area in embedded DRAM process 有权
    在嵌入式DRAM工艺中，针脚区域的字线绑扎接触定义多边形骨的方法

    公开(公告)号：US06376294B1

    公开(公告)日：2002-04-23

    申请号：US09755686

    申请日：2001-01-08

    Applicant: Kuo-Chyuan Tzeng ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Chen-Jong Wang

    Inventor： Kuo-Chyuan Tzeng ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Chen-Jong Wang

    IPC: H01L218238

    CPC classification number: H01L27/10891 ,  H01L21/823842 ,  H01L27/10894

    Abstract: A method for fabricating a dog-bone in a DRAM device, comprising the following steps. A semiconductor structure having an upper silicon layer with STIs formed therein is provided. The semiconductor structure has a LOGIC region and a DRAM region with a stitch region therebetween. A polysilicon layer is formed over the semiconductor structure. A dopant is selectively implanted in the polysilicon region within the DRAM region, and the portion of the stitch region within the DRAM region, to form a doped poly segment, and an undoped poly segment within the LOGIC region, and the portion of the stitch region within the LOGIC region. A hard mask is formed over the doped poly segment and the undoped poly segment and patterned to form at least one patterned first hard mask portion only over the word line doped poly segment within the DRAM region. At least one second mask layer portion is formed over the undoped poly segment within the LOGIC region and at least one third mask layer portion is formed over the doped poly segment in the portion of the stitch region within the DRAM region. The doped poly segment and undoped poly segment are etched to form: undoped poly periphery logic gate portions within the LOGIC region; doped poly dog-bone within the portion of the stitch region within the DRAM region; and doped poly word lines within the DRAM region. The second and third mask layer portions are stripped to expose the undoped poly periphery logic gate portions and the doped poly dog-bone.

    Abstract translation: 一种用于在DRAM器件中制造狗骨的方法，包括以下步骤。 提供了具有形成有STI的上硅层的半导体结构。 半导体结构具有LOGIC区域和其间具有缝合区域的DRAM区域。 在半导体结构上形成多晶硅层。 掺杂剂选择性地注入到DRAM区域内的多晶硅区域中，并且DRAM区域内的线圈区域的部分，以形成掺杂的多段，以及逻辑区域内的未掺杂的多段，以及缝合区域的部分 在LOGIC区域内。 在掺杂的多段和未掺杂的多段上形成硬掩模，并且被图案化以仅在DRAM区域内的字线掺杂的多段上形成至少一个图案化的第一硬掩模部分。 至少一个第二掩模层部分形成在LOGIC区域内的未掺杂的多段上，并且至少一个第三掩模层部分形成在DRAM区域内的线迹区域的部分中的掺杂多晶片段上。 蚀刻掺杂的多段和未掺杂的多段以在逻辑区内形成未掺杂的多边形逻辑门部; 在DRAM区域内的线圈区域的部分内的掺杂多晶骨; 和在DRAM区域内的掺杂多晶字线。 剥离第二和第三掩模层部分以暴露未掺杂的多边形逻辑门部分和掺杂的多晶骨。

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