Abstract:
An integral chip is disclosed by embodiments of the present disclosure, including: two mono-mode vertical coupling gratings, two modulation modules, one 2×1 multi-mode interference coupler, and one dual-mode vertical coupling grating. The integral chip is capable of operating in dual wavelengths and dual polarization states by combination of polarization multiplexing and wavelength division multiplexing so as to realize modulation of complex formats and to enhance data modulation rate.
Abstract:
A PhC all-optical multistep-delay OR-transformation logic gate includes an optical switch unit having a first intermediate-signal output port, a PhC structure unit having a first intermediate-signal input port connected with the first intermediate-signal output port, a reference-light source connected with the reference-light input port of the optical switch unit, a wave absorbing load, a flip-flop unit, and a memory or delayer having an input port connected with a first logic signal and an output port connected with the delay-signal input port of an optical switch unit whose logic-signal input port is connected with a second logic signal; a second intermediate-signal input port of the PhC structure unit is connected with the second intermediate-signal output port of said optical switch unit; a third intermediate-signal output port of the optical switch unit is connected with the wave absorbing load; a clock control-signal is input through the input port of a two-branch waveguide.
Abstract:
An optical clock generator includes a nonlinear cavity unit, a cross-waveguide logic gate unit and a delayer unit; and is of a six-port photonic crystal structure including two reference-light signal-input ports, a feedback-signal-input port, a system-signal and feedback-signal output port and two idle ports; the output port of the cross-waveguide logic gate unit is connected with the input port of the nonlinear cavity unit whose system-signal output port is connected with the input port of said delayer unit whose output port is connected with the input port of the cross-waveguide logic gate unit, the system-signal output port is connected with a two-branch waveguide one of which is used as the system-signal output port, and another is used as the feedback-signal output port and connected to an input port of said delayer unit, the delayer unit performs time delay on an input signal and outputs the signal to the feedback-signal-input port.
Abstract:
An integrated structure and method of formation provide a lower level waveguide having a core of a first material and a higher level waveguide having a core of a second material and a coupling region for coupling the two waveguides together. The different core materials provided different coupled waveguides having different light loss characteristics.
Abstract:
The present invention discloses a TMOS with a high extinction ratio based on slab PhCs which comprises an upper slab PhC and a lower slab PhC connected as a whole; the upper slab PhC is called as a first square-lattice slab PhC, wherein the unit cell of the first square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three first flat dielectric pillars and a background dielectric, and the first flat dielectric pillars includes a high-refractive-index dielectric pipe and a low-refractive-index dielectric, or of 1 to 3 high-refractive-index flat films, or of a low-refractive-index dielectric; the lower slab PhC is a second square-lattice slab PhC with a complete bandgap, the unit cell of the second square-lattice slab PhC includes a high-refractive-index rotating-square pillar, three second flat dielectric pillars and a background dielectric is a low-refractive-index dielectric and an normalized operating frequency of the TMOS is 0.4057 to 0.406.
Abstract:
An optical modulator for switching an optical signal of wavelength λ from one waveguide-electrode to another requires that both waveguide-electrodes be made of an electrically conducting material. Also, a non-conducting cross-coupling material fills a slot along a length L between the waveguide-electrodes. Importantly, cross-coupling material in the slot provides a separation distance xc between the waveguide-electrodes that is less than 0.35 microns. When a switching voltage Vπ is selectively applied to the waveguide-electrodes, a strong uniform electric field E is created within the cross-coupling material. Thus, E modulates the cross-coupling length of the optical signal by an increment ±Δ each time it passes back and forth through the cross-coupling material along the length L. Thus, after an N number of cross-coupling length cycles along the length L, when NΔ equals one cross-coupling length, the optical signal is switched from one waveguide-electrode to the other.
Abstract:
A substantially planar waveguide for dynamically controlling the out-of-plane angle at which a light beam exits the waveguide. Generally, liquid crystal materials may be disposed within a waveguide in a cladding proximate or adjacent to a core layer of the waveguide. In one example, the waveguide may contain one or more taper regions such that the light beam exits the waveguide and propagates out-of-the-plane of the waveguide into an out-coupling medium at a propagation angle. In one example, the waveguide may contain one or more electrodes onto which one or more voltages may be applied. The magnitude of the propagation angle may be electronically controlled by altered by controlling or altering the magnitude of the one or more applied voltages.
Abstract:
The present invention is based on a two-dimensional photonic crystal where are inserted defects that originate two waveguides and one resonant cavity. An electromagnetic signal that crosses the device is confined in the interior of the defects, due to the photonic band gap associated with the periodic structure that surrounds it. Its main function is the control of the flux of an electromagnetic signal over a communication channel, blocking (state off) or allowing (state on) the passage of the signal. It also promotes the change in the propagation direction of an electromagnetic signal by an angle of 120 degrees, providing greater flexibility in the design of integrated optical systems. The working principle of the device is based on the excitation of dipole modes in its resonant cavity, accordingly to the application of an external DC magnetic field on the magneto-optical material that constitutes it. In states on and off the magneto-optical material is magnetized and nonmagnetized, respectively.
Abstract:
There is presented an optical apparatus comprising first and second photon pair sources configured to convert at least one pump light photon into a first and second correlated signal and idler photon pairs. In one example, the apparatus is configured to use one of the signal and idler photons from the first correlated photon pair for controlling the conversion of the pump light photon in the second photon pair source. The apparatus may configured such that, at least one of the signal and idler photons from the first correlated photon pair is output from the first photon pair source onto an optical path wherein at least one of the signal and idler photons from the second correlated photon pair is output from the second photon pair source onto the optical path. A method is also provided for outputting one or more photons using the optical apparatus.
Abstract:
A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second areas, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.