公开(公告)号：US20150054146A1

公开(公告)日：2015-02-26

申请号：US14502307

申请日：2014-09-30

Applicant: SUMITOMO BAKELITE CO., LTD.

Inventor： Shingo Itoh

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L21/56 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49503 ,  H01L24/05 ,  H01L24/09 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05144 ,  H01L2224/05164 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01105 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/0002 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2224/43848 ,  H01L2924/20751

Abstract: A semiconductor device of the present invention includes a semiconductor element having an electrode pad; a substrate over which the semiconductor element is mounted and which has an electrical bonding part; and a bonding wire electrically connecting the electrode pad to the electrical bonding part, wherein a main metal component of the electrode pad is the same as or different from a main metal component of the bonding wire, and when the main metal component of the electrode pad is different from the main metal component of the bonding wire, a rate of interdiffusion of the main metal component of the bonding wire and the main metal component of the electrode pad at a junction of the bonding wire and the electrode pad under a post-curing temperature of an encapsulating resin is lower than that of interdiffusion of gold (Au) and aluminum (Al) at a junction of aluminum (Al) and gold (Au) under the post-curing temperature.

Abstract translation: 本发明的半导体器件包括具有电极焊盘的半导体元件; 半导体元件安装在其上并具有电接合部的基板; 以及将电极焊盘电连接到电接合部分的接合线，其中电极焊盘的主金属部件与接合线的主金属部件相同或不同，并且当电极焊盘的主金属部件 与接合线的主要金属成分不同，接合线的主金属成分和电极焊盘的主金属成分在接合线和电极焊盘的接合处的后固化时的相互扩散速度 封装树脂的温度低于在固化后温度下在铝（Al）和金（Au）的接合处金（Au）和铝（Al）的相互扩散的温度。

公开(公告)号：US20150028465A1

公开(公告)日：2015-01-29

申请号：US14373994

申请日：2013-03-12

Applicant: SUMITOMO BAKELITE CO., LTD.

Inventor： Shingo Itoh

IPC: H01L23/495 ,  H01L23/29 ,  H01L21/56

CPC classification number: H01L23/49575 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/4321 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83862 ,  H01L2224/85205 ,  H01L2224/85948 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/01201 ,  H01L2924/01203 ,  H01L2924/01202 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/078 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/01056 ,  H01L2924/0102 ,  H01L2924/01038 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01105 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2224/45664 ,  H01L2924/01005 ,  H01L2924/01033

Abstract: A semiconductor device includes a semiconductor element that is mounted on a substrate, an electrode pad that contains aluminum as a main component and is provided in the semiconductor element, a copper wire that contains copper as a main component and connects a connection terminal provided on the substrate and the electrode pad, and an encapsulant resin that encapsulates the semiconductor element and the copper wire. When the semiconductor device is heated at 200° C. for 16 hours in the atmosphere, a barrier layer containing any metal selected from palladium and platinum is farmed at a junction between the copper wire and the electrode pad.

Abstract translation: 半导体器件包括安装在基板上的半导体元件，以铝为主要元件并设置在半导体元件中的电极焊盘，以铜为主要元件的铜线，并连接设置在该基板上的连接端子 基板和电极焊盘，以及密封半导体元件和铜线的密封树脂。 当在大气中将半导体器件在200℃下加热16小时时，在铜线和电极焊盘之间的接合处种植含有选自钯和铂的任何金属的阻挡层。

公开(公告)号：US08633102B2

公开(公告)日：2014-01-21

申请号：US13548120

申请日：2012-07-12

Applicant: Ralf Otremba ,  Xaver Schloegel ,  Khai Huat Jeffrey Low ,  Chee Soon Law

Inventor： Ralf Otremba ,  Xaver Schloegel ,  Khai Huat Jeffrey Low ,  Chee Soon Law

IPC: H01L21/44

CPC classification number: H01L23/49503 ,  B81C1/00301 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/00 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/84 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/37144 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73213 ,  H01L2224/78301 ,  H01L2224/7865 ,  H01L2224/84801 ,  H01L2224/85045 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85801 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2924/01016 ,  H01L2924/01026 ,  H01L2924/01201

Abstract: A module includes a semiconductor chip having at least a first terminal contact surface and a second terminal contact surface. A first bond element made of a material on the basis of Cu is attached to the first terminal contact surface, and a second bond element is attached to the second terminal contact surface. The second bond element is made of a material different from the material of the first bond element or is made of a type of bond element different from the type of the first bond element.

Abstract translation: 模块包括具有至少第一端子接触表面和第二端子接触表面的半导体芯片。 由基于Cu的材料制成的第一接合元件附接到第一端子接触表面，并且第二接合元件附接到第二端子接触表面。 第二结合元件由与第一结合元件的材料不同的材料制成，或者由不同于第一粘结元件的类型的粘结元件制成。

公开(公告)号：US20130140068A1

公开(公告)日：2013-06-06

申请号：US13688784

申请日：2012-11-29

Applicant: Heraeus Materials Technology GMBH & Co. KG

Inventor： Murali SARANGAPANI ,  Ping Ha YEUNG ,  Eugen MILKE

IPC: H01B1/02 ,  H05K1/09

CPC classification number: H01B1/026 ,  C22C9/00 ,  C22C9/06 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05624 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/48511 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/181 ,  H05K1/092 ,  H01L2924/01201 ,  H01L2924/01028 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01078 ,  H01L2924/01024 ,  H01L2924/01058 ,  H01L2924/01012 ,  H01L2924/01057 ,  H01L2924/01013 ,  H01L2924/01026 ,  H01L2924/01005 ,  H01L2924/0104 ,  H01L2924/01022 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01016 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01033 ,  H01L2924/0102

Abstract: A secondary alloyed 1N copper wire for bonding in microelectronics contains one or more corrosion resistance alloying materials selected from Ag, Ni, Pd, Au, Pt, and Cr. A total concentration of the corrosion resistance alloying materials is between about 0.09 wt % and about 9.9 wt %.

Abstract translation: 用于微电子结合的二次合金化的1N铜线包含一种或多种选自Ag，Ni，Pd，Au，Pt和Cr的耐腐蚀性合金化材料。 耐腐蚀合金材料的总浓度为约0.09重量％至约9.9重量％。

公开(公告)号：US20090297391A1

公开(公告)日：2009-12-03

申请号：US12128097

申请日：2008-05-28

Applicant: Jun-Der LEE

Inventor： Jun-Der LEE

IPC: C22C5/08 ,  C22C5/06 ,  B22D11/10

CPC classification number: C22C5/06 ,  B22D11/005 ,  C22C5/08 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/43848 ,  H01L2224/45139 ,  H01L2924/00011 ,  H01L2924/14 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/01005

Abstract: A manufacturing method for a silver alloy bonding wire and products thereof A primary material of Ag is melted in a vacuum melting furnace, and then a plurality of secondary metal materials are added into the vacuum melting furnace and co-melted with the primary material to obtain a silver alloy ingot. The obtained silver alloy ingot is drawn to obtain a silver alloy wire. The silver alloy wire is then drawn to obtain a silver alloy bonding wire with a predetermined diameter.

Abstract translation: 银合金接合线的制造方法及其制造方法将Ag的一次材料在真空熔化炉中熔融，然后将多种二次金属材料添加到真空熔融炉中，与主要材料共熔，得到 银合金锭。 将得到的银合金锭拉伸，得到银合金线。 然后，对该银合金线进行拉伸，得到规定直径的银合金线。

公开(公告)号：US20090191088A1

公开(公告)日：2009-07-30

申请号：US12020884

申请日：2008-01-28

Applicant: Jun-Der LEE

Inventor： Jun-Der LEE

IPC: C22C5/08 ,  B21C9/00 ,  C22C5/06

CPC classification number: B21C3/02 ,  B21C37/047 ,  C22C5/06 ,  C22C5/08 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/435 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01204 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/01004 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01049 ,  H01L2924/01006

Abstract: A manufacturing method for a composite metal bonding wire and products thereof. A material of Ag and Au is co-melted in a vacuum melting furnace, and then a plurality of trace metal elements are added into the vacuum melting furnace and co-melted with the material to obtain a composite metal ingot. The obtained composite metal ingot is drawn to obtain a composite metal wire. The composite metal wire is then drawn to obtain a composite metal bonding wire with a predetermined diameter.

Abstract translation: 复合金属接合线的制造方法及其制造方法。 Ag和Au的材料在真空熔化炉中共熔融，然后将许多微量金属元素加入真空熔化炉中并与该材料共熔，得到复合金属锭。 将得到的复合金属锭拉出，得到复合金属丝。 然后将复合金属丝拉伸以获得具有预定直径的复合金属接合线。

公开(公告)号：US20080230928A1

公开(公告)日：2008-09-25

申请号：US11725973

申请日：2007-03-20

Applicant: Ralf Otremba ,  Xaver Schloegel ,  Khai Huat Jeffrey Low ,  Chee Soon Law

Inventor： Ralf Otremba ,  Xaver Schloegel ,  Khai Huat Jeffrey Low ,  Chee Soon Law

IPC: H01L23/48 ,  H01L21/00

CPC classification number: H01L23/49503 ,  B81C1/00301 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/00 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/84 ,  H01L24/85 ,  H01L24/91 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/37144 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/73213 ,  H01L2224/78301 ,  H01L2224/7865 ,  H01L2224/84801 ,  H01L2224/85045 ,  H01L2224/85099 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85801 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1304 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2924/01016 ,  H01L2924/01026 ,  H01L2924/01201

Abstract: A module includes a semiconductor chip having at least a first terminal contact surface and a second terminal contact surface. A first bond element made of a material on the basis of Cu is attached to the first terminal contact surface, and a second bond element is attached to the second terminal contact surface. The second bond element is made of a material different from the material of the first bond element or is made of a type of bond element different from the type of the first bond element.

Abstract translation: 模块包括具有至少第一端子接触表面和第二端子接触表面的半导体芯片。 由基于Cu的材料制成的第一接合元件附接到第一端子接触表面，并且第二接合元件附接到第二端子接触表面。 第二结合元件由与第一结合元件的材料不同的材料制成，或者由不同于第一粘结元件的类型的粘结元件制成。

公开(公告)号：US20080012132A1

公开(公告)日：2008-01-17

申请号：US11861290

申请日：2007-09-26

Applicant: Mou-Shiung Lin

Inventor： Mou-Shiung Lin

IPC: H01L23/52 ,  H01L23/488

CPC classification number: H01L24/05 ,  H01L23/525 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/05673 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/45173 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48869 ,  H01L2224/48873 ,  H01L2224/49171 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01201 ,  H01L2924/00012 ,  H01L2924/01049

Abstract: A semiconductor chip or wafer comprises a passivation layer and a circuit line. The passivation layer comprises an inorganic layer. The circuit line is over and in touch with the inorganic layer of the passivation layer, wherein the circuit line comprises a first contact point connected to only one second contact point exposed by an opening in the passivation layer, and the positions of the first contact point and the only one second contact point from a top view are different, and the first contact point is used to be wirebonded thereto.

Abstract translation: 半导体芯片或晶片包括钝化层和电路线。 钝化层包括无机层。 电路线与钝化层的无机层结合并接触，其中电路线包括连接到由钝化层中的开口暴露的仅一个第二接触点的第一接触点和第一接触点的位置 并且从俯视图的唯一的一个第二接触点是不同的，并且第一接触点用于与其键合。

公开(公告)号：US20070194460A1

公开(公告)日：2007-08-23

申请号：US11360336

申请日：2006-02-23

Applicant: Chu-Chung Lee ,  Kevin Hess

Inventor： Chu-Chung Lee ,  Kevin Hess

IPC: H01L21/44

CPC classification number: H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05624 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48799 ,  H01L2224/85205 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01201 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/01203 ,  H01L2224/05147 ,  H01L2924/00 ,  H01L2224/48824 ,  H01L2924/01202

Abstract: A bond pad for an electronic device such as an integrated circuit makes electrical connection to an underlying device via an interconnect layer. The bond pad has a first layer of a material that is aluminum and copper and a second layer, over the first layer, of a second material that is aluminum and is essentially free of copper. The second layer functions as a cap to the first layer for preventing copper in the first layer from being corroded by residual chemical elements. A wire such as a gold wire may be bonded to the second layer of the bond pad.

Abstract translation: 用于诸如集成电路的电子器件的接合焊盘通过互连层电连接到下面的器件。 接合焊盘具有铝和铜的材料的第一层，在第一层上具有作为铝的第二材料的第二层，并且基本上不含铜。 第二层用作第一层的帽，以防止第一层中的铜被残留的化学元素腐蚀。 诸如金线的线可以结合到接合焊盘的第二层。

公开(公告)号：US06210637B1

公开(公告)日：2001-04-03

申请号：US09020705

申请日：1998-02-09

Applicant: Tomohiro Uno ,  Kohei Tatsumi

Inventor： Tomohiro Uno ,  Kohei Tatsumi

IPC: C22C502

CPC classification number: C22C5/02 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01066 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/01204 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/20752 ,  Y10T428/12431 ,  H01L2924/01025 ,  H01L2924/01004 ,  H01L2924/01201 ,  H01L2924/01202 ,  H01L2924/01203 ,  H01L2924/01049 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/00015

Abstract: The present invention provides a gold alloy thin wire for semiconductor devices, which inhibits corrosion after heating and which improves long term reliability, in portions bonded to the aluminum electrodes. The gold alloy thin wires of the present invention comprise the following group elements. (1) The gold alloy thin wire contains, as basic alloying components, 0.005 to 0.3% by weight of Mn and 0.005 to 1.0% by weight of Pd. (2) A gold alloy thin wire further contains at least one element selected from Pt, Ag and Cu in a total amount of 0.01 to 1.0% by weight in addition to the basic alloying components mentioned above. (3) A gold alloy thin wire further contains at least one element selected from Ca, Be, In and rare earth elements in a total amount of 0.0005 to 0.05% by weight in addition to the components in (1) or (2).

Abstract translation: 本发明提供一种用于半导体器件的金合金细线，其在与铝电极接合的部分中抑制加热后的腐蚀并提高长期可靠性。本发明的金合金细线包括以下组元素（1 ）金合金细线作为碱性合金成分含有0.005〜0.3重量％的Mn和0.005〜1.0重量％的Pd。（2）金合金细线还含有选自Pt，Ag中的至少一种元素 （3）金合金细线还含有选自Ca，Be，In中的至少一种元素和稀土元素中的至少一种元素， 除了（1）或（2）中的组分之外，总重量为0.0005至0.05重量％。