FAST READOUT CIRCUIT FOR EVENT-DRIVEN PIXEL MATRIX ARRAY

    公开(公告)号:US20230025549A1

    公开(公告)日:2023-01-26

    申请号:US17869525

    申请日:2022-07-20

    Abstract: An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit including a plurality of column register cells; and a row readout circuit including a readout memory having a storage location corresponding to each pixel of the pixel array, the readout memory having sets of one or more row lines for writing to rows of memory locations of the readout memory, wherein each row output line of the pixel array is coupled, via a corresponding row line control circuit, to a corresponding one of the sets of one or more row lines of the readout memory.

    METHOD FOR MANUFACTURING A SOI OR SIGEOI TYPE SEMICONDUCTOR-ON-INSULATOR SUBSTRATE BY BESOI AND STRUCTURE FOR MANUFACTURING SUCH A SUBSTRATE

    公开(公告)号:US20230025306A1

    公开(公告)日:2023-01-26

    申请号:US17813860

    申请日:2022-07-20

    Abstract: A method for manufacturing a semiconductor-on-insulator substrate by BESOI comprising the following steps: a) provide a structure comprising a first substrate, a first stopping layer made of SiGe having an atomic percentage of Ge lower than or equal to 30%, an intermediate layer, a second stopping layer made of SiGe having a thickness smaller than the thickness of the first stopping layer and an atomic percentage of Ge higher than or equal to 20%, optionally an active area formed by a layer made of silicon or by a stack of active layers made of Si and SiGe, a dielectric layer, a second substrate, b) thin and then etch the first substrate made of silicon, from the first main face up to the second main face, c) successively remove the first stopping layer, the intermediate layer, and optionally the second stopping layer to obtain a SOI or SiGeOI substrate.

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