公开(公告)号：US07919335B2

公开(公告)日：2011-04-05

申请号：US12426711

申请日：2009-04-20

Applicant: Ying Xiao ,  Chyi Shyuan Chern

Inventor： Ying Xiao ,  Chyi Shyuan Chern

IPC: H01L21/00

CPC classification number: H01L22/20 ,  H01L21/76224 ,  H01L22/12

Abstract: A method includes measuring a depth of a shallow trench isolation (STI) region below a surface of a substrate. The STI region is filled with an oxide material. The substrate has a nitride layer above the surface. A thickness of the nitride layer is measured. A first chemical vapor etch (CVE) of the oxide material is performed, to partially form a recess in the STI region. The first CVE removes an amount of the oxide material less than the thickness of the nitride layer. The nitride layer is removed by dry etching. A remaining height of the STI region is measured after removing the nitride. A second CVE of the oxide material in the STI region is performed, based on the measured depth and the remaining height, to form at least one fin having a desired fin height above the oxide in the STI region without an oxide fence.

Abstract translation: 一种方法包括测量衬底表面下面的浅沟槽隔离（STI）区域的深度。 STI区域填充有氧化物材料。 衬底在表面上方具有氮化物层。 测量氮化物层的厚度。 执行氧化物材料的第一化学气相蚀刻（CVE），以在STI区域中部分地形成凹陷。 第一CVE去除少于氮化物层的厚度的一定量的氧化物材料。 通过干蚀刻去除氮化物层。 在去除氮化物之后测量STI区的剩余高度。 基于测量的深度和剩余高度，执行STI区域中的氧化物材料的第二CVE，以形成在没有氧化物栅栏的STI区域中具有高于氧化物的所需翅片高度的至少一个翅片。

公开(公告)号：US07837850B2

公开(公告)日：2010-11-23

申请号：US11237493

申请日：2005-09-28

Applicant: Ming-Da Guo ,  Pin-Chieh Hu ,  Hung-Cheng Chen ,  Kuan-Hsiao Lin ,  Wen-Chang Peng ,  Hsiao-Pin Shih ,  Chyi-Shyuan Chern

Inventor： Ming-Da Guo ,  Pin-Chieh Hu ,  Hung-Cheng Chen ,  Kuan-Hsiao Lin ,  Wen-Chang Peng ,  Hsiao-Pin Shih ,  Chyi-Shyuan Chern

IPC: C25D21/12

CPC classification number: C25D21/12 ,  C25D17/00 ,  H01L21/2885

Abstract: An electroplating system is provided. The system comprises a reaction tank, a tube, and a video bubble detector. The reaction tank, having a first diameter, contains a plating solution. The tube, connecting to the reaction tank, comprises an inflow tube and a branch, wherein the inflow tube inputs the plating solution into the reaction tank, and the branch has an enlarged part having the first diameter. The video bubble detector, mounted on the enlarged part of the branch, detects the presence of a bubble in the plating solution flowing through the branch.

Abstract translation: 提供电镀系统。 该系统包括反应罐，管和视频气泡检测器。 具有第一直径的反应槽含有电镀液。 连接到反应罐的管包括流入管和分支，其中流入管将电镀溶液输入反应罐，并且分支具有具有第一直径的扩大部分。 安装在分支放大部分的视频气泡检测器检测流过分支的电镀溶液中是否存在气泡。

公开(公告)号：US20100288369A1

公开(公告)日：2010-11-18

申请号：US12467375

申请日：2009-05-18

Applicant: Yi-Pin CHANG ,  Chyi Shyuan CHERN

Inventor： Yi-Pin CHANG ,  Chyi Shyuan CHERN

IPC: G05D16/20 ,  F15C3/00 ,  G05D7/06

CPC classification number: F16K51/02 ,  Y10T137/0379 ,  Y10T137/86002 ,  Y10T137/86027 ,  Y10T137/86083 ,  Y10T137/87684

Abstract: A vacuum system for semiconductor fabrication. The system includes a vacuum chamber for performing a semiconductor fabrication process, a vacuum source, and a piping system fluidly connecting the vacuum chamber to the vacuum source. In one embodiment, the piping system is configured without a horizontal flow path section of piping. In some embodiments, the piping system includes a first piping branch and a second piping branch. The first and second piping branches preferably have a symmetrical configuration with respect to the vacuum source. In yet other embodiments, the first and second piping branches preferably each include a throttle valve.

Abstract translation: 一种用于半导体制造的真空系统。 该系统包括用于执行半导体制造工艺的真空室，真空源和将真空室流体连接到真空源的管道系统。 在一个实施例中，管道系统被配置为没有管道的水平流动路径部分。 在一些实施例中，管道系统包括第一管道分支和第二管道分支。 第一和第二管道分支优选地具有相对于真空源的对称构造。 在其他实施例中，第一和第二管道分支优选地各自包括节流阀。

公开(公告)号：US20100187444A1

公开(公告)日：2010-07-29

申请号：US12359682

申请日：2009-01-26

Applicant: Chung-Ru Yang ,  Chyi Shyuan Chern ,  Soon Kang Huang

Inventor： Chung-Ru Yang ,  Chyi Shyuan Chern ,  Soon Kang Huang

IPC: A61N5/00

CPC classification number: H01L21/268 ,  H01L21/28185 ,  H01L22/14 ,  H01L22/20 ,  H01L22/34

Abstract: A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.

Abstract translation: 一种方法包括将半导体晶片分成多个管芯区域，产生半导体晶片的映射图，用激光扫描半导体晶片的多个管芯区域中的每一个，并且在扫描期间调整激光器的参数，基于 由半导体晶片的映射图识别的管芯区域的值。 基于每个单个管芯区域的第一测量来描绘管芯区域的地图。

公开(公告)号：US07666068B2

公开(公告)日：2010-02-23

申请号：US11751468

申请日：2007-05-21

Applicant: Soon Kang Huang ,  Chih-Lung Lin ,  Chyi-Shyuan Chern

Inventor： Soon Kang Huang ,  Chih-Lung Lin ,  Chyi-Shyuan Chern

IPC: B24B5/00

CPC classification number: B24B37/32

Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.

Abstract translation: 提供了保持环和使用保持环的方法。 保持环具有沿底面的开口。 沟槽包围开口并延伸到保持环的内部，其中可以保持半导体晶片。 在操作中，将半导体晶片放置在保持环内。 当保持环和半导体晶片相对于下面的抛光垫移动时，通过保持环中的开口分配浆料。 保持环中的槽允许浆料从开口流到保持环和半导体晶片的内部。

公开(公告)号：US20070068818A1

公开(公告)日：2007-03-29

申请号：US11237493

申请日：2005-09-28

Applicant: Ming-Da Guo ,  Pin-Chieh Hu ,  Hung-Cheng Chen ,  Kuan-Hsiao Lin ,  Wen-Chang Peng ,  Hsiao-Pin Shih ,  Chyi-Shyuan Chern

Inventor： Ming-Da Guo ,  Pin-Chieh Hu ,  Hung-Cheng Chen ,  Kuan-Hsiao Lin ,  Wen-Chang Peng ,  Hsiao-Pin Shih ,  Chyi-Shyuan Chern

IPC: C25D21/12

CPC classification number: C25D21/12 ,  C25D17/00 ,  H01L21/2885

Abstract: An electroplating system is provided. The system comprises a reaction tank, a tube, and a video bubble detector. The reaction tank, having a first diameter, contains a plating solution. The tube, connecting to the reaction tank, comprises an inflow tube and a branch, wherein the inflow tube inputs the plating solution into the reaction tank, and the branch has an enlarged part having the first diameter. The video bubble detector, mounted on the enlarged part of the branch, detects the presence of a bubble in the plating solution flowing through the branch.

Abstract translation: 提供电镀系统。 该系统包括反应罐，管和视频气泡检测器。 具有第一直径的反应槽含有电镀液。 连接到反应罐的管包括流入管和分支，其中流入管将电镀溶液输入反应罐，并且分支具有具有第一直径的扩大部分。 安装在分支放大部分的视频气泡检测器检测流过分支的电镀溶液中是否存在气泡。