公开(公告)号：US20150228888A1

公开(公告)日：2015-08-13

申请号：US14431125

申请日：2013-09-12

Applicant: CROCUS TECHNOLOGY SA

Inventor： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC: H01L43/02 ,  H03F15/00 ,  H03K19/18

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H03F15/00 ,  H03K19/18

Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。

公开(公告)号：US08988935B2

公开(公告)日：2015-03-24

申请号：US13720232

申请日：2012-12-19

Applicant: Crocus Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/56 ,  H01F10/32

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

Abstract: The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

Abstract translation: 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US20140126283A1

公开(公告)日：2014-05-08

申请号：US14154405

申请日：2014-01-14

Applicant: Crocus Technology SA

Inventor： Bertrand Cambou

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/5607 ,  Y10S977/933 ,  Y10S977/935

Abstract: The present disclosure concerns a multilevel magnetic element comprising a first tunnel barrier layer between a soft ferromagnetic layer having a magnetization that can be freely aligned and a first hard ferromagnetic layer having a magnetization that is fixed at a first high temperature threshold and freely alignable at a first low temperature threshold. The magnetic element further comprises a second tunnel barrier layer and a second hard ferromagnetic layer having a magnetization that is fixed at a second high temperature threshold and freely alignable at a first low temperature threshold; the soft ferromagnetic layer being comprised between the first and second tunnel barrier layers. The magnetic element disclosed herein allows for writing four distinct levels using only a single current line.

Abstract translation: 本公开涉及一种多电平磁性元件，其包括在具有可自由对准的磁化的软铁磁层之间的第一隧道势垒层和具有固定在第一高温阈值的磁化的第一硬铁磁层，并且可在 第一低温阈值。 磁性元件还包括第二隧道势垒层和具有固定在第二高温阈值并且可在第一低温阈值自由对准的磁化的第二硬铁磁层; 软铁磁层包括在第一和第二隧道势垒层之间。 这里公开的磁性元件允许仅使用单个电流线来写入四个不同的电平。

公开(公告)号：US20130208523A1

公开(公告)日：2013-08-15

申请号：US13764139

申请日：2013-02-11

Applicant: CROCUS TECHNOLOGY SA

Inventor： Jeremy Alvarez-Herault ,  Yann Conraux ,  Lucien Lombard

IPC: G11C15/02

CPC classification number: G11C15/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/046 ,  G11C2211/5615

Abstract: The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell comprising a first and second magnetic tunnel junction; a first and second conducting strap adapted to pass a heating current in the first and second magnetic tunnel junction, respectively; a conductive line electrically connecting the first and second magnetic tunnel junctions in series; a first current line for passing a first field current to selectively write a first write data to the first magnetic tunnel junction; and a second current line for passing a write current to selectively write a second write data to the second magnetic tunnel junction, such that three distinct cell logic states can be written in the MRAM-based TCAM cell.

Abstract translation: 本公开涉及包括第一和第二磁性隧道结的自参照的基于磁性随机存取存储器的三进制内容可寻址存储器（MRAM-based TCAM）单元; 适于分别在第一和第二磁性隧道结中传递加热电流的第一和第二导电带; 导电线，串联电连接第一和第二磁性隧道结; 用于通过第一场电流以选择性地将第一写入数据写入到第一磁性隧道结的第一电流线; 以及用于传递写入电流以选择性地将第二写入数据写入到第二磁性隧道结的第二电流线，使得可以在基于MRAM的TCAM单元中写入三个不同的单元逻辑状态。

公开(公告)号：US20130163318A1

公开(公告)日：2013-06-27

申请号：US13720232

申请日：2012-12-19

Applicant: CROCUS TECHNOLOGY SA

Inventor： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

Abstract: The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

Abstract translation: 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US11906553B2

公开(公告)日：2024-02-20

申请号：US17597352

申请日：2020-06-26

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev

IPC: G01R15/20 ,  G01R33/00 ,  G01R33/09

CPC classification number: G01R15/205 ,  G01R33/0005 ,  G01R33/098

Abstract: Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.

公开(公告)号：US11852700B2

公开(公告)日：2023-12-26

申请号：US17605069

申请日：2020-04-23

Applicant: Crocus Technology SA

Inventor： Salim Dounia ,  Claire Baraduc ,  Bernard Dieny

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.

公开(公告)号：US20230213597A1

公开(公告)日：2023-07-06

申请号：US17998984

申请日：2021-05-10

Applicant: CROCUS Technology SA

Inventor： Andrey Timopheev ,  Jeffrey Childress ,  Nikita Strelkov

IPC: G01R33/00 ,  G01R33/09

CPC classification number: G01R33/0017 ,  G01R33/098 ,  G01R33/1215

Abstract: Magnetic angular sensor element destined to sense an external magnetic field, including a magnetic tunnel junction containing a ferromagnetic pinned layer having a pinned magnetization, a ferromagnetic sensing layer, and a tunnel magnetoresistance barrier layer; the ferromagnetic sensing layer including a first sensing layer being in direct contact with the barrier layer and having a first sensing magnetization, a second sensing layer having a second sense magnetization, and a metallic spacer between the first sensing layer and the second sensing layer; wherein the metallic spacer is configured to provide an antiferromagnetic coupling between the first sensing magnetization and the second sensing magnetization such that the first sensing magnetization is oriented substantially antiparallel to the second sensing magnetization; the second sensing magnetization being larger than the first sensing magnetization, such that the second sensing magnetization is oriented in accordance with the direction of the external magnetic field.

公开(公告)号：US11468250B2

公开(公告)日：2022-10-11

申请号：US17299949

申请日：2019-11-29

Applicant: Crocus Technology SA

Inventor： Ali Alaoui ,  Hakan Ates Gurcan

IPC: G06K7/08

Abstract: A reader device for reading information stored on a magnetic strip containing a plurality of polarized magnets, each providing a magnetic flux, said reader device including: a magnetoresistive sensor including a plurality of magnetoresistive elements and configured for reading the information stored on the magnetic strip and outputting a read signal; a processing module configured for decoding the read signal and extracting binary data; wherein the read signal includes amplitude information of the magnetic flux; and wherein the processing module is further configured for decoding the read signal using the amplitude information of the read signal is described. Further, an amplitude decoding method for decoding the read signal outputted by the reader device is described.

公开(公告)号：US20220308133A1

公开(公告)日：2022-09-29

申请号：US17597195

申请日：2020-06-26

Applicant: Crocus Technology SA

Inventor： Léa Cuchet ,  Clarisse Ducruet ,  Jeffrey Childress

IPC: G01R33/09 ,  G01R15/20

Abstract: Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.