Abstract:
A method of eliminating surface roughness of metal lines is disclosed, which can effectively improve the rough edges formed on the surface of the metal lines after wet etching during the manufacturing process of a thin film transistor, so that reliability is increased and current leakage can be avoided. The method includes the steps of: applying a tetra-methyl ammonium hydroxide solution to the rough surface of the metal lines and keeping the metal lines still for a predetermined time; and rinsing the metal lines to remove the tetra-methyl ammonium hydroxide solution left on the surface of the metal lines.
Abstract:
A shift register and a voltage adjusting circuit and method thereof are disclosed. The voltage adjusting circuit includes a first input terminal, a second input terminal, a transistor, a first capacitor, a second capacitor, and an output terminal. The first input terminal receives a second clock signal. The second input terminal receives a fourth clock signal. The transistor has a source electrode, a drain electrode, and a gate electrode. The source electrode is coupled to ground and the gate electrode is coupled to the second input terminal. The first capacitor is coupled between the drain electrode and the first input terminal. One end of second capacitor is coupled between the first capacitor and drain electrode, and the other end of second capacitor is coupled between the second input terminal and gate electrode. The output terminal is coupled between the first capacitor and drain electrode to output an adjusted voltage.
Abstract:
A pixel structure of a liquid crystal display panel includes a first substrate; a color filter layer formed on the first substrate, the color filter layer comprising a plurality of filtering areas for filtering light, and a plurality of blocking areas for blocking light; a main spacer formed on one of the blocking areas; a sub spacer formed on another one of the blocking areas; a second substrate; a thin film transistor formed on the second substrate; an insulating layer formed above the thin film transistor and the second substrate; a liquid crystal layer formed between the first substrate and the second substrate; wherein a distance from an upper surface of the insulating layer near the main spacer to the second substrate is greater than a distance from an upper surface of the insulating layer near the sub spacer to the second substrate.
Abstract:
A liquid crystal lens is disclosed, comprising a plurality of lens units, wherein each lens unit comprises a first substrate, a second substrate opposite to the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, an insulating layer disposed on the first substrate, and a first electrode and a first floating electrode disposed at opposite sides of the insulating layer, wherein the first electrode comprises a first portion neighboring a first side of the lens unit and a second portion neighboring a second side of the lens unit, and the first floating electrode comprises a first portion and a second portion, wherein the first portion of the first floating electrode is partially overlapped with the first portion of the first electrode, and the second portion of the first floating electrode is partially overlapped with the second portion of the first electrode.
Abstract:
The present invention provides an organic light emitting diode touch display panel including a substrate, a plurality of first electrodes and a plurality of second electrodes disposed on the substrate, a plurality of light emitting layers, a plurality of dielectric layers, a plurality of first electrode stripes, and a plurality of second stripes. Each light emitting layer is disposed on each first electrode, and each dielectric layer is disposed on each second electrode. Each first electrode stripe is disposed on the light emitting layers in each row, and each second electrode stripe is disposed on the dielectric layers in each row. Each first electrode, each light emitting layer and each first electrode stripe form an organic light emitting diode, and each second electrode, each dielectric layer and each second electrode stripe form a touch sensing capacitor.
Abstract:
A vertical thin-film transistor structure includes a substrate, a source electrode, an insulation layer, a drain electrode, two first channel layers, a gate insulation layer and a gate electrode, which are stacked upward in that order on the substrate. The first channel layers are respectively disposed at two opposite ends of the drain electrode, and extend from the upper surface of the drain electrode to the upper surface of the source electrode respectively. Each of the first channel layers contacts the source electrode and the drain electrode. The gate insulation layer is disposed on the source electrode, the first channel layers and the drain electrode. The gate electrode is disposed on the gate insulation layer and covers the first channel layers. Therefore, the volume of the conventional thin-film transistor structure shrinks, and the ratio of the volume of the conventional thin-film transistor structure to that of a pixel structure decreases.
Abstract:
A pixel array substrate includes a substrate, a plurality of thin-film transistors disposed on the substrate, a first insulating layer covering the thin-film transistors and the substrate, a common electrode disposed on the first insulating layer, a second insulating layer covering the first insulating layer and the common electrode, and a plurality of pixel electrodes disposed on the second insulating layer. Each thin-film transistor includes a drain electrode. The first insulating layer includes a plurality of first openings exposing the drain electrodes respectively. The second insulating layer includes a plurality of second openings exposing the first openings respectively. Each pixel electrode is electrically connected to each drain electrode respectively through each first opening and each second opening. The first insulating layer includes a thickness between 1 micron and 5 microns.
Abstract:
The present invention discloses a gate driver circuit. The gate driver circuit includes a plurality of driving units electrically connected in series, wherein the gate driver circuit receives a plurality of frequency signals and the driving units transmit a plurality of output signals sequentially. Furthermore, each driving unit includes a primary circuit, a first voltage regulator circuit and a second voltage regulator circuit.
Abstract:
The present invention provides a pixel structure including a substrate, a thin-film transistor disposed on the substrate, a first insulating layer covering the thin-film transistor and the substrate, a common electrode, a connecting electrode, a second insulating layer, and a pixel electrode. The thin-film transistor includes a drain electrode. The first insulating layer has a first opening exposing the drain electrode. The common electrode and the connecting electrode are disposed on the first insulating layer. The connecting electrode extends into the first opening to be electrically connected to the drain electrode. The connecting electrode is electrically insulated from the common electrode. The second insulating layer covers the first insulating layer, the common electrode, the connecting electrode, and has a second opening exposing the connecting electrode. The pixel electrode is disposed on the second insulating layer and electrically connected to the connecting electrode through the second opening.
Abstract:
A liquid crystal display includes a first substrate, a second substrate, and a liquid crystal layer, wherein the first substrate is disposed below the second substrate and the liquid crystal layer is disposed between the first substrate and the second substrates. The liquid crystal display further includes at least one thin film transistor, a common electrode, a first insulating layer, and at least one pixel electrode disposed on the upper surface of the first substrate in order. A plurality of bumps are disposed on the lower surface of the second substrate. The thin film transistor includes a gate, a source, and a drain.