Abstract:
[Object]The object of this invention is to prevent as much as possible the occurrence of uneven image density produced by photoreceptors, in which uneven electrification and uneven sensitivity coexist, without enlargement of an apparatus as well as increase in cost. [Solution]For each of segments of the surface of the photoreceptor, individually memorizing a slope information K1 which defines the slope of when a pixel gradation is approximately linear-transformed into exposure amount, and then, based upon K1 per segment, individually transforming the pixel gradation into the exposure amount (individual exposure amount transformation). The slope information is an information which, with a reference electric potential Vs1, matches the electric potential after the exposure of when the exposure amount, obtained by transforming a reference pixel gradation Is1 by means of the individual exposure amount transformation, is applied to the approximately-linear exposure property excepting the converging region to a residual potential VL, or to the exposure property extending the aforesaid property by extrapolation operation, among exposure property g01 showing correspondence between the exposure amount and the electric potential after exposure per segment.
Abstract:
A semiconductor integrated circuit device has a first MIS transistor of a first conductivity type, a second MIS transistor of a second conductivity type, a resistor connected in series between a first power-source line and a second power-source line, and a third MIS transistor of the first conductivity type. The third MIS transistor has a gate connected to a node where the first MIS transistor and the second MIS transistor are connected together, and a drain connected to a connection node where the second MIS transistor and the resistor are connected together.
Abstract:
A bias current IB additionally provided to a current-controlled circuit 13 in a PLL circuit is the sum of bias currents IB1 and IB2 which are generated by a bias adjustment circuit (18, 19, 20, 21 and 22) and a bias current generating circuit (23 and 24), respectively. The bias adjustment circuit adjusts the bias current IB1 in response to an adjustment start signal ADJ such that a control voltage VC converges to a reference voltage VREF, and ceases the adjustment when the convergence has been achieved. The reference voltage VREF is determined to be a value at an almost middle point in a range of the variable VC in the PLL circuit. The bias current generating circuit has a circuit 23 generating a bias voltage VT and a circuit 24 converting the VT into a current IB2, wherein the temperature characteristic of the bias voltage VT is reverse to that of the control voltage VC under the condition that the frequency of an oscillation signal OCLK is fixed.
Abstract:
An image forming machine comprising image bearing means, charging means, exposure means, reversal development means, transfer means, and cleaning means. The transfer means includes a rotationally driven transfer belt, and transfer voltage applicator means for applying a transfer voltage to the back side of the transfer belt. The transfer voltage applicator means applies the transfer voltage to the transfer belt over a predetermined effective transfer width. The face side of the transfer belt is brought into contact with the image bearing means via an image receiving member and directly over a predetermined effective contact width. The effective contact width is larger than an effective charging width and larger than the effective transfer width.
Abstract:
The necessary information such as chip area A, number of elements, and defect density D is inputted to calculate element density TD and mean element density TDM. The inverse operation chip area A′ is calculated from the estimation equation: Y=f(A) such as Stapper's equation showing the dependence of the yield on the defect density D and chip area A. Next, for various kinds of integrated circuit devices in a diffusion process, the functional relation g (TD/TDM) which is considered to be most correct is determined from the data of the relationship between the ratio (A′/A) and the ratio (TD/TDM), and from the relational expression g (TD/TDM), the correction factor K is calculated. Finally, the values of the correction factor K and the chip area A are substituted into Y=f(A×K) to calculate the expected yield Y.
Abstract:
A current source switch circuit has at least one transistor forming part of a current source, and one switch for controlling the supply of an electric current from the transistor to a load. A voltage application unit applies a voltage having a value in an operation state as a current source to a transistor forming part of the current source while no electric current is provided from the switch to the load.
Abstract:
The liquid crystal panel according to an embodiment of the present invention includes, in the stated order from a viewer side: a first polarizer; a first optical compensation layer; a liquid crystal cell; a second optical compensation layer; and a second polarizer, wherein: the first optical compensation layer has an absolute value of a photoelastic coefficient of 40×10−12 (m2/N) or less, has an in-plane retardation Δnd of 90 nm to 200 nm, has relationships of the following Expressions (1) and (2), and functions as a protective layer on a liquid crystal cell side of the first polarizer; and the second optical compensation layer has relationships of the following Expressions (3) and (4), Δnd(380)=Δnd(550)=Δnd(780) (1) nx>ny>nz (2) Rth(380)>Rth(550)>Rth(780) (3) nx=ny>nz. (4)
Abstract:
A clock recovery circuit has a phase comparator circuit, a phase adjusting circuit, and a duty cycle correction circuit. The phase comparator circuit carries out phase comparison between an input signal and an output signal, and outputs a phase control signal proportional to a phase difference between the input signal and the output signal. The phase adjusting circuit receives the phase control signal from the phase comparator circuit, adjusts the phase of the input signal, and produces the output signal, and the duty cycle correction circuit receives the output signal from the phase adjusting circuit, and corrects the duty cycle of the output signal.
Abstract:
A clock recovery circuit has a boundary detection/discrimination circuit to detect and discriminate a boundary in an input signal in accordance with a first signal. The clock recovery circuit performs clock recovery by controlling the timing of the first signal in accordance with the detected boundary, wherein boundary detection timing in the boundary detection/discrimination circuit is varied by controlling the first signal.
Abstract:
The present invention provides a solid electrolytic capacitor comprising a capacitor element in which a dielectric coating layer and a cathode layer are sequentially formed on a surface of an anode element having an anode lead member planted on one end surface thereof, an anode terminal connected with the anode lead member, a platy cathode terminal mounting the capacitor element thereon and connected with the cathode layer, and an enclosure resin coating the capacitor element, a part of the cathode terminal and a part of the anode terminal being exposed on a same plane from the enclosure resin. The cathode terminal is provided with a cathode exposed portion exposed from the enclosure resin in at least two locations on the same plane.