Abstract:
A compound tetrahedrally coordinated semiconductor structure, whose chemical formula is generally of the form IInIIImIVlVpVIq, where n, m, l, p, q represent the relative abundance of each element associated with a particular group of the periodic table. The flexibility of the chemical formula may be used to adjust the lattice constant and polarity to eliminate mismatches from substrates. Other properties, such as those of band gaps, can also be tuned. The design is amenable to layer-by-layer heteroepitaxial growth. In exemplary embodiments, a structure is provided that matches lattice constant and polarity with a Si(100) surface, while having a direct band gap of 1.59 μm.
Abstract translation:一种化合物四面体配位的半导体结构,其化学式通常为II III III族化合物 其中n,m,l,p,q表示与周期表的特定组相关联的每个元素的相对丰度。 可以使用化学式的灵活性来调节晶格常数和极性,以消除与衬底的错配。 其他属性,如带隙,也可以调整。 该设计适合逐层异质外延生长。 在示例性实施例中,提供了将晶格常数和极性与Si(100)表面相匹配的结构,同时具有1.59μm的直接带隙。
Abstract:
An electronic transportor that allows for the resonant tunneling of electrons between guided states, such as those found in a quantum wire or a line defect in a solid, and localized states, such as those found in a quantum dot or a point defect in a solid, using lateral coupling. In some embodiments, the transporter allows electrons of different energies to be transported to different ports of associated waveguides. In other embodiments, the transportor allows electrons of different energies to be transported at different phases.
Abstract:
A periodic dielectric structure and method of fabricating same, the structure having a three-dimensional photonic bandgap. The structure includes a plurality of layers, each layer having a stratum of a first material having a first dielectric constant and a plurality of parallel grooves along a first axis lying in the plane of the layer, the grooves including a second material having a second dielectric constant; and a plurality of parallel channels formed through the plurality of layers in a second axis orthogonal to the plane of the layers, the channels being adapted to comprise a third material having a third dielectric constant, thereby resulting in the structure having three-dimensional periodicity. In preferred embodiments, the second and third materials include air.
Abstract:
The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the β-factor) over large areas, contrary to the conventional wisdom that the β-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.
Abstract:
The invention provides techniques for drawing fibers that include conducting, semiconducting, and insulating materials in intimate contact and prescribed geometries. The resulting fiber exhibits engineered electrical and optical functionalities along extended fiber lengths. The invention provides corresponding processes for producing such fibers, including assembling a fiber preform of a plurality of distinct materials, e.g., of conducting, semiconducting, and insulating materials, and drawing the preform into a fiber.
Abstract:
The dielectric, three-dimensional photonic materials disclosed herein feature Dirac-like dispersion in quasi-two-dimensional systems. Embodiments include a face-centered cubic (fcc) structure formed by alternating layers of dielectric rods and dielectric slabs patterned with holes on respective triangular lattices. This fcc structure also includes a defect layer, which may comprise either dielectric rods or a dielectric slab with patterned with holes. This defect layer introduces Dirac cone dispersion into the fcc structure's photonic band structure. Examples of these fcc structures enable enhancement of the spontaneous emission coupling efficiency (the β-factor) over large areas, contrary to the conventional wisdom that the β-factor degrades as the system's size increases. These results enable large-area, low-threshold lasers; single-photon sources; quantum information processing devices; and energy harvesting systems.
Abstract:
Described herein are embodiments of a source resonant structure and a device resonant structure, the structures may be capable of performing wireless near-field energy transfer when separated a distance D from each other, where the absolute value of the difference of said angular frequencies w1 and w2 may be smaller than the magnitude of the coupling rate, k, and where at least one of the resonant structures comprises a high-Q capacitively-loaded conducting-wire loop.
Abstract:
Described herein are embodiments of a source resonator optionally coupled to an energy source, and a second resonator, optionally coupled to an energy drain that may be located a distance from the source resonator. The source resonator and the second resonator may be coupled to provide κ/sqrt(Γ1Γ2)>0.2 via near-field wireless energy transfer among the source resonator and the second resonator over distances up to at least the characteristic size of a resonator.
Abstract:
The electromagnetic energy transfer device includes a first resonator structure receiving energy from an external power supply. The first resonator structure has a first Q-factor. A second resonator structure is positioned distal from the first resonator structure, and supplies useful working power to an external load. The second resonator structure has a second Q-factor. The distance between the two resonators can be larger than the characteristic size of each resonator. Non-radiative energy transfer between the first resonator structure and the second resonator structure is mediated through coupling of their resonant-field evanescent tails.
Abstract:
Disclosed is a method for transferring energy wirelessly including transferring energy wirelessly from a first resonator structure to an intermediate resonator structure, wherein the coupling rate between the first resonator structure and the intermediate resonator structure is κ1B, transferring energy wirelessly from the intermediate resonator structure to a second resonator structure, wherein the coupling rate between the intermediate resonator structure and the second resonator structure is κB2, and during the wireless energy transfers, adjusting at least one of the coupling rates κ1B and κB2 to reduce energy accumulation in the intermediate resonator structure and improve wireless energy transfer from the first resonator structure to the second resonator structure through the intermediate resonator structure.