公开(公告)号：US20060180882A1

公开(公告)日：2006-08-17

申请号：US11353041

申请日：2006-02-14

Applicant: Akira Sato ,  Shogo Inaba

Inventor： Akira Sato ,  Shogo Inaba

IPC: H01L21/00 ,  H01L29/82

CPC classification number: B81C1/00587

Abstract: A MEMS device includes a wiring laminated through an interlayer insulating film on a semiconductor substrate, the interlayer insulating film partially opened up to an upper portion of the substrate, and a structure disposed in the opening, wherein on a sidewall of the interlayer insulating film exposed in the opening that faces the structure and on a surface of the uppermost layer of the interlayer insulating film, a silicon nitride film is formed.

Abstract translation: MEMS器件包括通过半导体衬底上的层间绝缘膜层叠的布线，部分地向基板的上部开放的层间绝缘膜和布置在开口中的结构，其中在层间绝缘膜的侧壁暴露 在面向结构的开口和层间绝缘膜的最上层的表面上形成氮化硅膜。