公开(公告)号：US6099662A

公开(公告)日：2000-08-08

申请号：US248726

申请日：1999-02-11

Applicant: Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

Inventor： Ying-Lang Wang ,  Jowei Dun ,  Ken-Shen Chou ,  Yu-Ku Lin

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  B08B3/00 ,  H01L21/00

CPC classification number: H01L21/02065 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212

Abstract: An improved method for removing residual slurry particles and metallic residues from the surface of a semiconductor substrate after chemical-mechanical polishing has been developed. The cleaning method involves sequential spray cleaning solutions of NH.sub.4 OH and H.sub.2 O, NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, HF and H.sub.2 O, and HCl, H.sub.2 O.sub.2 and H.sub.2 O. The cleaning sequence is: 1. A pre-soak in a spray solution of NH.sub.4 OH and H.sub.2 O; 2. Spray cleaning in a solution of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O; 3. Spray cleaning in a dilute solution of HF and H.sub.2 O; 4. Spray rinsing in DI-water. It is important that slurry particulates first be removed by NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O, followed by spray cleaning in a dilute solution of HF and H.sub.2 O to remove metallic residues. The spray cleaning method is superior to brush cleaning methods for both oxide-CMP and tungsten-CMP and results in superior removal of slurry particles and metallic residues introduced by the CMP processes. An optional spray cleaning step using a solution of HCl, H.sub.2 O.sub.2 and H.sub.2 O results in further reduction of metallic residue contamination following oxide-CMP. Compared to traditional brush cleaning the new spray cleaning process has a 2.times. improvement in throughput, less consumption of DI water, and low risk of cross-contamination between sequentially cleaned substrates.

Abstract translation: 已经开发了用于在化学机械抛光之后从半导体衬底的表面除去残余浆料颗粒和金属残留物的改进方法。 清洗方法包括NH 4 OH和H 2 O，NH 4 OH，H 2 O 2和H 2 O，HF和H 2 O以及HCl，H 2 O 2和H 2 O的顺序喷雾清洗溶液。 清洗顺序为：1.在NH4OH和H2O的喷雾溶液中预浸泡; 2.在NH4OH，H2O2和H2O溶液中喷雾清洗; 3.在HF和H2O的稀溶液中喷雾清洗; 4.在DI水中喷淋。 重要的是，首先通过NH 4 OH，H 2 O 2和H 2 O除去浆料颗粒，然后在HF和H 2 O的稀溶液中喷雾清洗以除去金属残余物。 喷雾清洗方法优于氧化物CMP和钨-CMP两者的刷子清洗方法，并且优异地除去由CMP工艺引入的浆料颗粒和金属残留物。 使用HCl，H2O2和H2O溶液的可选喷雾清洗步骤可以进一步降低氧化物CMP后的金属残留污染。 与传统的刷子清洁相比，新的喷雾清洁过程在吞吐量方面有2倍的改善，更少的去离子水消耗，以及顺序清洗的基材之间交叉污染的风险较低。

公开(公告)号：US09254548B2

公开(公告)日：2016-02-09

申请号：US13455448

申请日：2012-04-25

Applicant: Yen-Chang Chao ,  Kei-Wei Chen ,  Ying-Lang Wang

Inventor： Yen-Chang Chao ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

CPC classification number: B24B53/12 ,  B24B53/017 ,  B24D3/06 ,  B24D3/28 ,  B24D18/00

Abstract: A method for making a conditioner disk used in a chemical mechanical polishing (CMP) process comprises applying a first layer of at least one binder over a substrate; disposing a plurality of diamond particles on the first layer of the at least one first binder at the plurality of locations; and fixing the plurality of diamond particles to the substrate by heating the substrate to a raised temperature and then cooling the substrate. The plurality of diamond particles disposed over the substrate are configured to provide a working diamond ratio higher than 50% when the conditioner disk is used in a CMP process.

Abstract translation: 用于制造在化学机械抛光（CMP）工艺中使用的调节盘的方法包括在衬底上施加至少一种粘合剂的第一层; 在所述多个位置处在所述至少一个第一粘合剂的所述第一层上设置多个金刚石颗粒; 以及通过将衬底加热到​​升高的温度然后冷却衬底，将多个金刚石颗粒固定到衬底上。 设置在基板上的多个金刚石颗粒被配置为当在CMP工艺中使用调节盘时，提供高于50％的工作金刚石比例。

公开(公告)号：US09120194B2

公开(公告)日：2015-09-01

申请号：US13188028

申请日：2011-07-21

Applicant: Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

Inventor： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

IPC: B24B7/22 ,  B24D7/14

CPC classification number: B24B7/228 ,  B24D7/14

Abstract: A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.

Abstract translation: 砂轮包括具有第一附接谷物垫的外基部; 以及具有第二附着谷物垫的内框架; 以及由所述外基座和所述内框架共享的主轴，其中所述外基座和所述内框架中的至少一个可以沿着所述共享主轴轴线独立地移动; 并且其中所述外基座，所述内框架和所述共享主轴轴线都具有相同的中心。 研磨系统包括上述砂轮和附接到共享主轴轴线的能够垂直移动的砂轮头，除了驱动砂轮旋转的马达之外， 以及用于将晶片固定在卡盘台顶部的卡盘台; 其中所述砂轮与所述卡盘台的一部分重叠，所述卡盘台的每一个能够沿相反方向旋转。

公开(公告)号：US09064892B2

公开(公告)日：2015-06-23

申请号：US13221160

申请日：2011-08-30

Applicant: Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

Inventor： Wen Chu Hsiao ,  Ju Wen Hsiao ,  Ying Min Chou ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/66636 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/30604 ,  H01L29/165 ,  H01L29/167 ,  H01L29/7834 ,  H01L29/7848

Abstract: A semiconductor structure and method for forming the same provide a high mobility stressor material suitable for use as source/drain regions or other active devices. The structure is formed in a substrate opening and is doped with an impurity such as boron in upper portions but is void of the impurity in regions that contact the surfaces of the opening. The structure is therefore resistant to out-diffusion of the dopant impurity during high temperature operations and may be formed through selective deposition using reduced pressure chemical vapor deposition or reduced pressure epitaxial deposition.

Abstract translation: 半导体结构及其形成方法提供适合用作源极/漏极区域或其它有源器件的高迁移率应力源材料。 该结构形成在衬底开口中，并且在上部掺杂有诸如硼的杂质，但是在与开口的表面接触的区域中不含杂质。 因此，该结构在高温操作期间抵抗掺杂剂杂质的扩散，并且可以通过使用减压化学气相沉积或减压外延沉积的选择性沉积来形成。

公开(公告)号：US09064770B2

公开(公告)日：2015-06-23

申请号：US13551457

申请日：2012-07-17

Applicant: Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

Inventor： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC: H01L21/02 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L21/02087 ,  H01L21/0209 ,  H01L27/14687

Abstract: A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.

Abstract translation: 一种方法包括在半导体衬底上形成顶部金属线，其中半导体衬底是具有斜面的晶片的一部分。 当顶部金属线暴露时，在斜面上提供蚀刻剂，其中用蚀刻剂喷射的晶片的区域具有形成具有第一直径的第一环的内部限定线。 进行修整步骤以修剪晶片的边缘部分，其中晶片的剩余部分的边缘具有基本上等于或小于第一直径的第二直径。

公开(公告)号：US08552529B2

公开(公告)日：2013-10-08

申请号：US13488958

申请日：2012-06-05

Applicant: Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

Inventor： Jung-Chih Tsao ,  Yu-Sheng Wang ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC: H01L21/02

CPC classification number: H01L27/0805 ,  H01L28/60 ,  H01L28/75

Abstract: A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.

Abstract translation: 公开了一种半导体器件。 该装置包括基板; 覆盖衬底的第一金属层; 覆盖在第一金属层上的电介质层; 以及覆盖所述电介质层的第二金属层，其中所述第一金属层包括：第一体心立方晶格金属层; 第一底层，位于第一体心立方晶格金属层下面，其中第一底层是体心立方晶格的金属，包括钛（Ti），钨（W），钼（Mo）或铌（Nb）; 以及在第一体心立方晶格金属层和第一底层之间的体心立方晶格的第一界面。

公开(公告)号：US08551193B2

公开(公告)日：2013-10-08

申请号：US13188182

申请日：2011-07-21

Applicant: Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen

Inventor： Shih-Chieh Chang ,  Ying-Lang Wang ,  Kei-Wei Chen

IPC: C22C19/03 ,  H01L21/283

CPC classification number: H01L29/45 ,  C23C14/14 ,  C23C14/3414 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/823418 ,  H01L29/456 ,  H01L29/665 ,  Y10T29/41

Abstract: A target includes nickel and a secondary metal. The secondary metal has a volume percentage between about 1 percent and about 10 percent. The secondary metal has a density between about 5,000 kg/m3 and about 15,000 kg/m3.

Abstract translation: 目标包括镍和二次金属。 次级金属的体积百分比在约1％至约10％之间。 二次金属具有约5,000kg / m 3至约15,000kg / m 3的密度。

公开(公告)号：US20130220090A1

公开(公告)日：2013-08-29

申请号：US13408327

申请日：2012-02-29

Applicant: Chun-Ting KUO ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

Inventor： Chun-Ting KUO ,  Kei-Wei CHEN ,  Ying-Lang WANG ,  Kuo-Hsiu WEI

IPC: B26D1/14 ,  B26D7/18 ,  B24D3/00

CPC classification number: B26D7/18 ,  B23D61/02 ,  B23D61/021 ,  B24D5/02 ,  B24D5/12 ,  B26D1/143 ,  B28D1/04 ,  B28D1/121 ,  B28D5/022 ,  Y10T83/0448 ,  Y10T83/9372

Abstract: A wafer edge trim blade includes a round blade body and at least one slot formed inward from an outside edge of the round blade body. The at least one slot is configured to remove debris generated during wafer edge trimming using the wafer edge trim blade.

Abstract translation: 晶片边缘修剪刀片包括圆形刀片本体和从圆刀片本体的外边缘向内形成的至少一个槽。 所述至少一个槽被配置成使用晶片边缘修剪刀片去除在晶片边缘修整期间产生的碎屑。

公开(公告)号：US20130193540A1

公开(公告)日：2013-08-01

申请号：US13436364

申请日：2012-03-30

Applicant: Miao-Cheng Liao ,  Jinn-Kwei Liang ,  Wen-Chieh Hsieh ,  Shiu-Ko JangJian ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

Inventor： Miao-Cheng Liao ,  Jinn-Kwei Liang ,  Wen-Chieh Hsieh ,  Shiu-Ko JangJian ,  Hsiang Hsiang Ko ,  Ying-Lang Wang

IPC: H01L31/0232 ,  H01L31/0216

CPC classification number: H01L31/1804 ,  H01L27/1462 ,  H01L27/1464 ,  H01L31/103 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for reducing dark current in image sensors comprises providing a backside illuminated image sensor wafer, depositing a first passivation layer on a backside of the backside illuminated image sensor wafer, depositing a plasma enhanced passivation layer on the first passivation layer and depositing a second passivation layer on the plasma enhanced passivation layer.

Abstract translation: 一种用于减小图像传感器中的暗电流的方法包括提供背面照射的图像传感器晶片，在背面照射的图像传感器晶片的背面上沉积第一钝化层，在第一钝化层上沉积等离子体增强的钝化层并沉积第二钝化层 层上的等离子体增强钝化层。

公开(公告)号：US20130181258A1

公开(公告)日：2013-07-18

申请号：US13349221

申请日：2012-01-12

Applicant: Shiu-Ko JangJian ,  Kei-Wei CHEN ,  Szu-An WU ,  Ying-Lang WANG

Inventor： Shiu-Ko JangJian ,  Kei-Wei CHEN ,  Szu-An WU ,  Ying-Lang WANG

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14623 ,  H01L27/1464

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract translation: 图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。 光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。 该多层结构包括第一和第二透光层。 第一透光层夹在基板和第二透光层之间。 第一透光层的折射率为基板折射率的60％至90％。 第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。