公开(公告)号：US20110059580A1

公开(公告)日：2011-03-10

申请号：US12883044

申请日：2010-09-15

Applicant: Oseob Jeon ,  Chung-Lin Wu ,  Eddy Tjhia ,  Bigildis C. Dosdos

Inventor： Oseob Jeon ,  Chung-Lin Wu ,  Eddy Tjhia ,  Bigildis C. Dosdos

IPC: H01L21/50

CPC classification number: H01L23/49816 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/40 ,  H01L23/49562 ,  H01L23/49805 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/16 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/732 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.

Abstract translation: 本发明的示例性半导体管芯封装具有设置在半导体管芯的第一表面和散热部件之间的金属氧化物衬底，其具有导电裸片夹或设置在金属氧化物衬底和金属氧化物衬底之间的一个或多个电互连迹线 半导体芯片的第一表面。 散热部件可以包括散热器或适配器板，散热器可以耦合到适配器板。 导电芯片夹或电迹线为半导体管芯的第一表面提供电连接，同时金属氧化物衬底将电芯与散热部件绝缘，并提供高导热性的路径 在模具和散热部件之间。 半导体管芯的第二表面可以自由地连接到电路板，或者可以将引线框架或互连衬底附接到其上。

公开(公告)号：US07800219B2

公开(公告)日：2010-09-21

申请号：US11968602

申请日：2008-01-02

Applicant: Oseob Jeon ,  Chung-Lin Wu ,  Eddy Tjhia ,  Bigildis C. Dosdos

Inventor： Oseob Jeon ,  Chung-Lin Wu ,  Eddy Tjhia ,  Bigildis C. Dosdos

IPC: H01L23/34 ,  H01L23/10

CPC classification number: H01L23/49816 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/40 ,  H01L23/49562 ,  H01L23/49805 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/16 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/3754 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/732 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.

Abstract translation: 本发明的示例性半导体管芯封装具有设置在半导体管芯的第一表面和散热部件之间的金属氧化物衬底，其具有导电管芯夹子或设置在金属氧化物衬底和金属氧化物衬底之间的一个或多个电互连迹线 半导体芯片的第一表面。 散热部件可以包括散热器或适配器板，散热器可以耦合到适配器板。 导电芯片夹或电迹线为半导体管芯的第一表面提供电连接，同时金属氧化物衬底将电芯与散热部件绝缘，并提供高导热性的路径 在模具和散热部件之间。 半导体管芯的第二表面可以自由地连接到电路板，或者可以将引线框架或互连衬底附接到其上。

公开(公告)号：US20100123225A1

公开(公告)日：2010-05-20

申请号：US12275086

申请日：2008-11-20

Applicant: Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

Inventor： Michael D. Gruenhagen ,  Suku Kim ,  James J. Murphy ,  Ihsiu Ho ,  Eddy Tjhia ,  Chung-Lin Wu ,  Mark Larsen ,  Rohit Dikshit

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L29/7802 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/482 ,  H01L24/16 ,  H01L24/19 ,  H01L24/31 ,  H01L29/0657 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/73253 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2924/00

Abstract: Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention.

Abstract translation: 公开了半导体管芯结构，其使具有垂直功率器件的管芯封装在晶片级芯片级封装中，其中导电端子存在于管芯的一个表面处，并且器件具有非常低的导通状态 抵抗性。 在示例性实施例中，沟槽和孔形成在管芯的背面，孔与导管的顶表面处的导电区接触。 可以在沟槽和孔上设置导电层和/或导体，以将器件的背面导电电极电耦合到导电区域。 还公开了使用根据本发明的具有模具结构的模具的封装和系统，以及根据本发明的具有模具结构的模具的方法。

公开(公告)号：US20070238263A1

公开(公告)日：2007-10-11

申请号：US11400731

申请日：2006-04-06

Applicant: Hamza Yilmaz ,  Qi Wang ,  Minhua Li ,  Chung-Lin Wu

Inventor： Hamza Yilmaz ,  Qi Wang ,  Minhua Li ,  Chung-Lin Wu

IPC: H01L21/30

CPC classification number: H01L21/76251 ,  H01L21/6835 ,  H01L24/28 ,  H01L29/78603 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/351 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0665

Abstract: A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.

Abstract translation: 公开了将半导体衬底接合到金属衬底的方法。 在一些实施例中，该方法包括在半导体衬底中形成半导体器件，该半导体器件包括第一表面。 该方法还包括获得金属基底。 金属基板结合到半导体器件的第一表面，其中金属基板的至少一部分形成用于半导体器件的电端子。

公开(公告)号：US5580416A

公开(公告)日：1996-12-03

申请号：US381038

申请日：1995-01-31

Applicant: Chin-I Lin ,  Chung-Lin Wu ,  Rong-Shian Liu ,  Gou-Don Chu

Inventor： Chin-I Lin ,  Chung-Lin Wu ,  Rong-Shian Liu ,  Gou-Don Chu

IPC: B29C70/16 ,  B29C33/48 ,  B29C53/82 ,  B29C70/06 ,  B29C70/32 ,  B29K105/08 ,  B29L22/00 ,  B65H81/00

CPC classification number: B29C70/32 ,  B29C53/821 ,  B29C53/824 ,  B29C33/48

Abstract: A mandrel assembly has a hollow main tube and two annular sleeves, wherein an inner diameter of the two annular sleeves is larger than an outer diameter of the two main tube ends. The two annular sleeves are sleeved respectively on the two main tube ends, which can be easily disengaged from the mandrel assembly when applied with an external force.

Abstract translation: 心轴组件具有中空主管和两个环形套筒，其中两个环形套筒的内径大于两个主管端部的外径。 两个环形套筒分别套在两个主管端上，当外力施加时，它们可以容易地从心轴组件脱离。