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    Flat panel display and method for fabricating the same
    61.
    发明申请
    Flat panel display and method for fabricating the same 审中-公开
    平板显示器及其制造方法

    公开(公告)号：US20050105037A1

    公开(公告)日：2005-05-19

    申请号：US10959977

    申请日：2004-10-08

    Applicant: Hoon Kim ,  Ki-Yong Lee ,  Jin-Wook Seo

    Inventor： Hoon Kim ,  Ki-Yong Lee ,  Jin-Wook Seo

    IPC: G02F1/136 ,  G02F1/1345 ,  G02F1/1362 ,  G09F9/30 ,  G09G3/00 ,  G09G3/36 ,  H01L21/00 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32

    CPC classification number: G02F1/13624 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244

    Abstract: A flat panel display and method for fabricating the same are disclosed. In the flat panel display a substrate includes a pixel region having a plurality of unit pixels, and a peripheral circuit region arranged in the periphery of the pixel region. The peripheral circuit region also includes a driving circuit for driving the plurality of unit pixels. At least one circuit thin film transistor is positioned in the peripheral circuit region and includes a first semiconductor layer crystallized by a sequential lateral solidification method. At least one pixel thin film transistor is positioned in the pixel region and includes a second semiconductor layer having a channel region crystallized by one of a metal induced crystallization method or a metal induced lateral crystallization method.

    Abstract translation: 公开了一种平板显示器及其制造方法。 在平板显示器中，基板包括具有多个单位像素的像素区域和布置在像素区域周边的外围电路区域。 外围电路区域还包括用于驱动多个单位像素的驱动电路。 至少一个电路薄膜晶体管位于外围电路区域中，并且包括通过顺序横向固化方法结晶的第一半导体层。 至少一个像素薄膜晶体管位于像素区域中，并且包括具有通过金属诱导结晶法或金属诱导横向结晶法中的一种结晶的沟道区的第二半导体层。

    Light-emitting device with quantum dots and holes, and its fabricating method
    63.
    发明授权
    Light-emitting device with quantum dots and holes, and its fabricating method 失效
    具有量子点和空穴的发光器件及其制造方法

    公开(公告)号：US06753545B2

    公开(公告)日：2004-06-22

    申请号：US10211564

    申请日：2002-08-05

    Applicant: Hoon Kim

    Inventor： Hoon Kim

    IPC: H01L2906

    CPC classification number: H01L33/08 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/06 ,  H01S5/3412 ,  Y10S438/962

    Abstract: A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are focused into an ion beam whose focal point is controlled to determine the diameter of the ion beam, and the ion beam is accelerated. When being incident upon the semiconductor substrate, the ion beam is deflected so as to form a plurality of quantum holes. Also provided is a light-emitting device with quantum dots. Impurities are doped onto a semiconductor substrate to form a P-type semiconductor layer on which a undoped, intrinsic semiconductor is grown to a certain thickness. A plurality of quantum holes are provided for the intrinsic semiconductor layer, followed by filling materials smaller in energy band gap than the intrinsic semiconductor in annealed quantum holes through recrystallization growth. Next, an N-type semiconductor layer is overlaid on the quantum hole layer. Composition of the materials filled in the quantum holes determines the color of the light emitted from the light-emitting device. Thus, the semiconductor device is fabricated to emit light of the three primary colors or one of them. By cutting the semiconductor device, unit display panels or elements can be prepared which emit radiation at wavelengths corresponding to red, green and blue colors.

    Abstract translation: 提供了一种用于形成纳米级量子空穴的方法。 在离子束扫描器中，离子从离子枪投射到半导体衬底上。 在投影期间，离子被聚焦成离子束，其焦点被控制以确定离子束的直径，并且离子束被加速。 当入射到半导体衬底上时，离子束被偏转以形成多个量子孔。 还提供了具有量子点的发光装置。 将杂质掺杂到半导体衬底上以形成其中未掺杂的本征半导体生长到一定厚度的P型半导体层。 为本征半导体层提供多个量子孔，随后通过再结晶生长在退火的量子阱中填充比本征半导体更小的能带隙的材料。 接下来，将N型半导体层重叠在量子孔层上。 填充在量子孔中的材料的组成确定从发光装置发射的光的颜色。 因此，制造半导体器件以发射三原色光或其中之一的光。 通过切割半导体器件，可以准备发射对应于红色，绿色和蓝色的波长的辐射的单元显示面板或元件。

    Plasmonic field-enhanced photodetector and image sensor
    64.
    发明授权
    Plasmonic field-enhanced photodetector and image sensor 有权

    公开(公告)号：US12237430B2

    公开(公告)日：2025-02-25

    申请号：US18236805

    申请日：2023-08-22

    Applicant: Hoon Kim

    Inventor： Hoon Kim

    IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/103

    Abstract: A photodetector includes a metal layer that shields incident light and generates surface plasmon polaritons (SPPs), a light absorbing layer that absorbs the generated SPPs and allows charges excited by the absorbed SPPs and a localized electric field effect to tunnel, a dielectric formed at nanoholes in which at least a part of the metal layer is opened, and a semiconductor layer that induces the photocurrent based on an electric field effect of tunneled electrons. The SPPs form localized surface plasmons (LSPs) at an interface where the metal layer meets the dielectric.

    Table air circulation roaster with safety function
    67.
    发明授权
    Table air circulation roaster with safety function 有权

    公开(公告)号：US11937737B1

    公开(公告)日：2024-03-26

    申请号：US18227829

    申请日：2023-07-28

    Applicant: Hoon Kim ,  Chan Park ,  Yong Goo Cho

    Inventor： Hoon Kim ,  Chan Park ,  Yong Goo Cho

    IPC: A47J37/07

    CPC classification number: A47J37/0754

    Abstract: An air circulation roaster for tables with a safety function enabled to remove foreign substances (oil and nitrogen dioxide) generated during cooking of meat, reducing contamination of the air around the roaster, has a safety function that cuts off power pending the sensed temperature of the roast plate. The air circulation roaster has a temperature sensor detecting the temperature of the roast plate, a control box placed outside the body when the temperature cuts off power supplied to the heating lamp when the heating unit exceeds the set limit. A platinum catalyst filter placed around the outside of the heating unit is coated with platinum on a network-shaped ceramic.

    Unit pixel of image sensor and light-receiving element thereof
    68.
    发明授权
    Unit pixel of image sensor and light-receiving element thereof 有权

    公开(公告)号：US11563135B2

    公开(公告)日：2023-01-24

    申请号：US17093624

    申请日：2020-11-09

    Applicant: Hoon Kim

    Inventor： Hoon Kim

    IPC: H01L27/14 ,  H01L31/113 ,  H01L31/0232 ,  H01L31/036 ,  H01L27/146

    Abstract: Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

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