公开(公告)号：US09893066B2

公开(公告)日：2018-02-13

申请号：US15432165

申请日：2017-02-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Biao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Su Xing ,  Tien-Yu Hsieh

IPC: H01L29/49 ,  H01L27/105 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.

公开(公告)号：US09806191B1

公开(公告)日：2017-10-31

申请号：US15289982

申请日：2016-10-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wanxun He ,  Su Xing

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L21/441 ,  H01L21/467 ,  H01L29/24

CPC classification number: H01L29/7827 ,  H01L21/441 ,  H01L21/467 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a source layer; removing part of the source layer to form a first opening; forming a first channel layer in the first opening; forming a gate layer around the first channel layer and on the source layer; forming a drain layer on the gate layer and the first channel layer; removing part of the drain layer to form a second opening; and forming a second channel layer in the second opening.

公开(公告)号：US09722093B1

公开(公告)日：2017-08-01

申请号：US15253896

申请日：2016-09-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Su Xing ,  Hsueh-Wen Wang ,  Chien-Yu Ko ,  Yu-Cheng Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yu-Ming Lin

IPC: H01L21/28 ,  H01L29/786 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L27/11585

CPC classification number: H01L29/7869 ,  H01L21/28291 ,  H01L27/11585 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66545 ,  H01L29/6684 ,  H01L29/66969

Abstract: An oxide semiconductor transistor includes an oxide semiconductor channel layer, a metal gate, a gate insulation layer, an internal electrode, and a ferroelectric material layer. The metal gate is disposed on the oxide semiconductor channel layer. The gate insulation layer is disposed between the metal gate and the oxide semiconductor channel layer. The internal electrode is disposed between the gate insulation layer and the metal gate. The ferroelectric material layer is disposed between the internal electrode and the metal gate. The ferroelectric material layer in the oxide semiconductor transistor of the present invention is used to enhance the electrical characteristics of the oxide semiconductor transistor.

公开(公告)号：US09627549B1

公开(公告)日：2017-04-18

申请号：US14874546

申请日：2015-10-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhi-Biao Zhou ,  Shao-Hui Wu ,  Chi-Fa Ku ,  Chen-Bin Lin ,  Su Xing ,  Tien-Yu Hsieh

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L49/02 ,  H01L27/115 ,  H01L27/108

CPC classification number: H01L27/1052 ,  H01L27/108 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/40 ,  H01L29/66742 ,  H01L29/7869

Abstract: A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a control capacitor. The gate electrode, the source electrode and the drain electrode are directly in contact with the active surface. The gate electrode is disposed between the drain electrode and the source electrode. The gate electrode, the source electrode and the drain electrode are separated from each other. The control capacitor is electrically connected to the gate electrode through a connection.