中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

108 records (took 0.014 seconds)

    TRANSMISSION MODE PHOTOCATHODE
    61.
    发明申请
    TRANSMISSION MODE PHOTOCATHODE 有权
    传输模式光栅

    公开(公告)号：US20160233044A1

    公开(公告)日：2016-08-11

    申请号：US15029336

    申请日：2014-08-08

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takaaki NAGATA ,  Yasumasa HAMANA ,  Kimitsugu NAKAMURA

    IPC: H01J1/34 ,  H01J43/10 ,  H01J43/08 ,  H01J1/32 ,  H01J40/06

    CPC classification number: H01J1/34 ,  H01J1/32 ,  H01J40/06 ,  H01J43/08 ,  H01J43/10

    Abstract: A transmission mode photocathode comprises: an optically transparent substrate having an outside face to which light is incident, and an inside face from which the light incident to the outside face side is output; a photoelectric conversion layer disposed on the inside face side of the optically transparent substrate and configured to convert the light output from the inside face into a photoelectron or photoelectrons; and an optically-transparent electroconductive layer comprising graphene, and disposed between the optically transparent substrate and the photoelectric conversion layer.

    Abstract translation: 透射模式光电阴极包括：具有入射光的外表面的光学透明基板和入射到外表面侧的光的内表面; 光电转换层，设置在所述光学透明基板的内表面侧，并且被配置为将从所述内表面输出的光转换为光电子或光电子; 以及包含石墨烯的光学透明导电层，并设置在光学透明基板和光电转换层之间。

    Photocathode
    62.
    发明申请
    Photocathode 有权

    公开(公告)号：US20050168144A1

    公开(公告)日：2005-08-04

    申请号：US11055663

    申请日：2005-02-11

    Applicant: Toru Hirohata ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Masami Yamada

    Inventor： Toru Hirohata ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Masami Yamada

    IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L29/06

    CPC classification number: H01J1/34 ,  H01J2201/342

    Abstract: The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.

    Photocathode
    63.
    发明授权
    Photocathode 有权
    光电阴极

    公开(公告)号：US06903363B2

    公开(公告)日：2005-06-07

    申请号：US10705901

    申请日：2003-11-13

    Applicant: Toru Hirohata ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Masami Yamada

    Inventor： Toru Hirohata ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Masami Yamada

    IPC: H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01L29/06 ,  H01L33/00

    CPC classification number: H01J1/34 ,  H01J2201/342

    Abstract: The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 μm or more but 2 μm or less.

    Abstract translation: 本发明涉及具有抑制低温下的辐射灵敏度降低的结构的光电阴极，从而提高S / N比。 在光电阴极中，在基板的上层形成有光吸收层。 在光吸收层的上层形成电子发射层。 具有条纹状的接触层形成在电子发射层的上层。 在接触层的表面上形成由金属构成的表面电极。 调整接触层中的条之间的间隔，使其变为0.2μm以上2μm以下。

    Photocathode having A1GaN layer with specified Mg content concentration
    64.
    发明申请
    Photocathode having A1GaN layer with specified Mg content concentration 审中-公开
    具有规定Mg含量浓度的AlGaN层的光电阴极

    公开(公告)号：US20050045866A1

    公开(公告)日：2005-03-03

    申请号：US10961142

    申请日：2004-10-12

    Applicant: Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

    Inventor： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

    IPC: H01J1/34 ,  H01J29/38 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08 ,  H01L29/06

    CPC classification number: H01J31/507 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J2231/50021

    Abstract: Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

    Abstract translation: 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子 光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。 这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此 得到具有高量子效率的太阳能型半导体光电阴极1。

    Integrated photocathode
    65.
    发明授权
    Integrated photocathode 失效
    集成光电阴极

    公开(公告)号：US5912500A

    公开(公告)日：1999-06-15

    申请号：US561909

    申请日：1995-11-22

    Applicant: Kenneth A. Costello ,  Verle W. Aebi ,  Robert E. Weiss

    Inventor： Kenneth A. Costello ,  Verle W. Aebi ,  Robert E. Weiss

    IPC: H01J9/12 ,  H01J1/34 ,  H01J31/50 ,  H01J40/06 ,  H01J43/08 ,  H01L21/306 ,  H01L29/72

    CPC classification number: H01J31/501 ,  H01J1/34

    Abstract: A transferred-electron photocathode or other opto-electronic device having one light-receiving side and one electronic side, in which multiple photocathodes are processed concurrently on a wafer for front and back side contacts and anti-reflection layers. After the wafer-level processing, the individual cells are diced, and each is placed in a rectangular recess formed in a window body with the light-receptive part of the photocathode facing the window. The integration is aided by several novel processes including coining a chip recess into a window, selective etching of titanium over chromium, and using a single metal sheet member for electrically contacting the photocathode, forming part of the vacuum envelope, and providing an exterior electrical tab.

    Abstract translation: 具有一个光接收侧和一个电子侧的转移电子光电阴极或其它光电子器件，其中在晶片上同时处理多个光电阴极用于正面和背面接触和抗反射层。 在晶片级处理之后，单个单元被切割，并且每个单元被放置在形成在窗体中的矩形凹部中，光电阴极的光接收部分面向窗口。 通过几个新颖的工艺来辅助整合，包括将一个芯片凹槽压成窗口，选择性地蚀刻钛上的铬，以及使用单个金属片构件来电接触光电阴极，形成真空外壳的一部分，以及提供外部电气接头 。

    Photomultiplier having a photocathode comprised of semiconductor material
    68.
    发明授权
    Photomultiplier having a photocathode comprised of semiconductor material 失效
    具有由半导体材料构成的光电阴极的光电倍增管

    公开(公告)号：US5710435A

    公开(公告)日：1998-01-20

    申请号：US580057

    申请日：1995-12-20

    Applicant: Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

    Inventor： Minoru Niigaki ,  Toru Hirohata ,  Tomoko Suzuki ,  Masami Yamada

    IPC: H01J1/34 ,  H01J43/08 ,  H01L29/06 ,  H01L29/12

    CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。 光电子在该电场加速下获得能量，并且在电子发射层中转移到更高能级的导带，并发射到真空中。

    Transparent photocathode
    69.
    发明授权
    Transparent photocathode 失效
    透明光电阴极

    公开(公告)号：US5598062A

    公开(公告)日：1997-01-28

    申请号：US547990

    申请日：1995-10-25

    Applicant: Yoshiki Iigami

    Inventor： Yoshiki Iigami

    IPC: H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01J43/08

    CPC classification number: H01J40/06 ,  H01J1/34

    Abstract: A transparent photocathode comprises a silver layer formed on a transparent substrate, comprising silver particles having an average diameter of 80 to 200 nm, and a silver oxide layer, potassium layer, and a cesium layer. As a result of the silver layer comprising silver particles having dispersive diameters, the transparent photocathode can selectively achieve high sensitivity to an infrared region of near 1.5 .mu.m wavelength.

    Abstract translation: 透明光电阴极包括形成在透明基板上的银层，其包含平均直径为80至200nm的银颗粒，以及氧化银层，钾层和铯层。 由于包含具有分散直径的银颗粒的银层的结果，透明光电阴极可以选择性地实现对近1.5μm波长的红外区域的高灵敏度。

Patent Agency Ranking