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    PROCESS FOR HYDROPHILICALLY BONDING SUBSTRATES
    71.
    发明申请
    PROCESS FOR HYDROPHILICALLY BONDING SUBSTRATES 有权

    公开(公告)号：US20220319910A1

    公开(公告)日：2022-10-06

    申请号：US17597583

    申请日：2020-07-13

    Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES ,  Soitec

    Inventor： Vincent Larrey ,  François Rieutord ,  Jean-Michel Hartmann ,  Frank Fournel ,  Didier Landru ,  Oleg Kononchuk ,  Ludovic Ecarnot

    IPC: H01L21/762 ,  H01L21/02

    Abstract: A process for hydrophilic bonding first and second substrates, comprising: —bringing the first and second substrates into contact to form a bonding interface between main surfaces of the first and second substrates, and —applying a heat treatment to close the bonding interface. The process further comprises, before the step of bringing into contact, depositing, on the main surface of the first and/or second substrate, a bonding layer comprising a non-metallic material that is permeable to dihydrogen and that has, at the temperature of the heat treatment, a yield strength lower than that of at least one of the materials of the first substrate and of the second substrate located at the bonding interface. The layer has a thickness between 1 and 6 nm, and the heat treatment is carried out at a temperature lower than or equal to 900° C., and preferably lower than or equal to 600° C.

    Method for transferring a thin layer using a filled preceramic polymer
    75.
    发明授权
    Method for transferring a thin layer using a filled preceramic polymer 有权

    公开(公告)号：US11380577B2

    公开(公告)日：2022-07-05

    申请号：US17078488

    申请日：2020-10-23

    Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

    Inventor： Lamine Benaissa ,  Marilyne Roumaine

    IPC: H01L21/762 ,  H01L23/00

    Abstract: A method for transferring, from a donor substrate to a carrier substrate, a thin layer having a first coefficient of thermal expansion. This method comprises: —forming an embrittlement plane in the donor substrate; —forming an electrically insulating layer on the surface of the donor substrate and/or of the carrier substrate; —producing an assembly by placing the donor substrate and the carrier substrate in contact with one another via the insulating layer; —separating the assembly by fracturing along the embrittlement plane. In order to form the electrically insulating layer, the method comprises coating the donor substrate and/or the carrier substrate with a coating formulation including a composite material formed by a matrix made of a particle-filled preceramic polymer, the composite material having a second coefficient of thermal expansion, the second coefficient of thermal expansion differing from the first coefficient of thermal expansion by no more than 20% of the first coefficient of thermal expansion.

    Process for manufacturing an optoelectronic device having a diode matrix
    76.
    发明授权
    Process for manufacturing an optoelectronic device having a diode matrix 有权

    公开(公告)号：US11374147B2

    公开(公告)日：2022-06-28

    申请号：US17044787

    申请日：2019-04-17

    Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

    Inventor： Matthew Charles

    IPC: H01L33/00 ,  H01L33/22 ,  H01L33/14 ,  H01L33/20 ,  H01L21/02 ,  H01L33/12 ,  H01L27/15 ,  H01L27/144

    Abstract: A process for manufacturing an optoelectronic device having a diode matrix with semiconductor stacks involves providing a growth substrate having a support substrate coated with a nucleation layer defining a nucleation surface. A dielectric layer is deposited on the nucleation surface. A plurality of through-holes, extending to the nucleation surface, are formed in the dielectric layer. The nucleation layer, located in the through-holes, is etched to free up an upper surface of the support surface and expose a lateral surface of the nucleation layer forming a lateral nucleation surface. A dielectric region is formed extending in the support substrate such that, during a subsequent epitaxial growth stage, each first doped portion is formed especially from the lateral nucleation surface. In the through-holes and from the nucleation surface, the semiconductor stacks are epitaxially grown such that at least the first doped portions and active zones thereof are located in the through-holes.

    OxRAM oxide based resistive random access memory cell and associated manufacturing method
    80.
    发明授权
    OxRAM oxide based resistive random access memory cell and associated manufacturing method 有权

    公开(公告)号：US11329224B2

    公开(公告)日：2022-05-10

    申请号：US16712145

    申请日：2019-12-12

    Applicant: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

    Inventor： Rémy Gassilloud ,  Mathieu Bernard ,  Christelle Charpin-Nicolle

    IPC: H01L45/00

    Abstract: An OxRAM oxide based resistive random access memory cell includes a first electrode; a layer M1Oss of a sub-stoichiometric oxide of a first metal; a layer M2N of a nitride of a second metal M2; a layer M3M4O of a ternary alloy of a third metal M3, a fourth metal M4 and oxygen O, or M3M4NO of a quaternary alloy of the third metal M3, the fourth metal M4, nitrogen N and oxygen O and a second electrode. The standard free enthalpy of formation of the ternary alloy M3M4O, noted ΔGf,T0 (M3M4O), or of the quaternary alloy M3M4NO, noted ΔGf,T0 (M3M4NO), is strictly less than the standard free enthalpy of formation of the sub-stoichiometric oxide M1Oss of the first metal M1, noted ΔGf,T0 (M1Oss), itself less than or equal to the standard free enthalpy of formation of any ternary oxynitride M2NO of the second metal M2, noted ΔGf,T0 (M2NO): ΔGf,T0(M3M4O)

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