公开(公告)号：US20220163605A1

公开(公告)日：2022-05-26

申请号：US17440908

申请日：2020-03-19

Applicant: Crocus Technology SA

Inventor： Andrey Timopheev ,  Ali Alaoui ,  Evgeny Burmistrov

IPC: G01R33/00 ,  G01R33/06 ,  G01D5/14

Abstract: An electronic circuit for measuring an angle and an intensity of an external magnetic field, includes: first and second magnetic field sensing units having sensing axes substantially orthogonal to each other; a voltage generator supplying a synchronization signal, a first voltage waveform to the first magnetic field sensing unit and a second voltage waveform to the second magnetic field sensing unit; a signal conditioning unit configured for adding the first and second sensing output signals and outputting a conditioned signal. The first and second voltage waveforms have substantially the same amplitude and frequency and are phase shifted by about 90° with respect to each other. The conditioned signal and the synchronization signal are inputted into a magnetic field angle detection unit configured for measuring a phase shift between the conditioned signal and the synchronization signal and for determining the angle of the external magnetic field from the measured phase shift.

公开(公告)号：US10712399B2

公开(公告)日：2020-07-14

申请号：US15527766

申请日：2015-11-18

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/00 ,  G01R33/09

Abstract: A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.

公开(公告)号：US10665774B2

公开(公告)日：2020-05-26

申请号：US16083163

申请日：2017-03-06

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G11C11/00 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32

Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between −10 ppm and +10 ppm or more negative than −10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.

公开(公告)号：US20180075896A1

公开(公告)日：2018-03-15

申请号：US15565505

申请日：2016-04-06

Applicant: CROCUS Technology SA

Inventor： Ali Alaoui

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/1673 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H03K19/20

Abstract: A logic gate module for performing logic functions including a MRAM cell including a magnetic tunnel junction comprising a sense layer, a storage layer, and a spacer layer. The MRAM cell has a junction resistance determined by the degree of alignment between a sense magnetization of the sense layer and the storage magnetization of the storage layer. The storage magnetization and the sense magnetization are switchable between m directions to store data corresponding to one of m logic states, with m>2, such that the MRAM cell is usable as a n-bit cell with n≧2. The logic gate module further includes a comparator for comparing the junction resistance with a reference value and outputting a digital signal indicating a difference between the junction resistance and the reference value, such that logic functions can be performed.

公开(公告)号：US09905283B2

公开(公告)日：2018-02-27

申请号：US15516098

申请日：2015-09-24

Applicant: CROCUS Technology SA

Inventor： Quentin Stainer

IPC: G11C11/16 ,  G01R33/09

CPC classification number: G11C11/1675 ,  G01R33/098 ,  G11C11/161 ,  G11C11/1673

Abstract: A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.

公开(公告)号：US20170322263A1

公开(公告)日：2017-11-09

申请号：US15527766

申请日：2015-11-18

Applicant: CROCUS Technology SA

Inventor： Sebastien BANDIERA

IPC: G01R33/00 ,  G01R33/09

Abstract: A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.

公开(公告)号：US20170309812A1

公开(公告)日：2017-10-26

申请号：US15516079

申请日：2015-09-24

Applicant: CROCUS Technology SA

Inventor： Bertrand Cambou

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A MRAM-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.

公开(公告)号：US09786837B2

公开(公告)日：2017-10-10

申请号：US14887856

申请日：2015-10-20

Applicant: International Business Machines Corporation ,  Crocus Technology SA

Inventor： Anthony J. Annunziata ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/12 ,  G11C11/56

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1677 ,  G11C11/5607 ,  H01L43/08 ,  H01L43/12

Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM). A storage layer has an anisotropic axis, in which the storage layer is configured to store a state in off axis positions and on axis positions. The off axis positions are not aligned with the anisotropic axis. A tunnel barrier is disposed on top of the storage layer. A ferromagnetic sense layer is disposed on top of the tunnel barrier.

公开(公告)号：US09679624B2

公开(公告)日：2017-06-13

申请号：US14647600

申请日：2013-11-19

Applicant: CROCUS Technology SA

Inventor： Lucien Lombard ,  Ioan Lucian Prejbeanu

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.

公开(公告)号：US09583695B2

公开(公告)日：2017-02-28

申请号：US14431125

申请日：2013-09-12

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC: H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H03K19/18

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H03F15/00 ,  H03K19/18

Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。