Abstract:
The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.
Abstract:
Disclosed herein is a pumping apparatus for a vehicle seat, which includes an input member rotated by torque input from a handle lever, a clutch unit configured to transmit the input torque to a link mechanism of a seat cushion, a brake unit configured to cut off the torque input in reverse from the link mechanism, a housing accommodating the clutch unit therein, and a fixing member coupled to a rear end of the housing, wherein the input member includes a first input member disposed in front of the housing, and a second input member connected to the first input member and accommodated in the housing, and the clutch unit includes a torque transmission member arranged on an outer peripheral surface of the second input member, and an annular control member having a clutch friction surface formed on an inner peripheral surface thereof.
Abstract:
Subsets of isolated communications networks are selectively merged without merging the entire isolated communications networks, and devices are imported across isolated communications networks without merging the isolated communications networks. The presently disclosed technology provides for improved scalability, performance, and security in logical networks spanning two or more physical communications networks.
Abstract:
A method for displaying a video which is dithered using related masks and a video display apparatus applying the same, the video display apparatus dithering a video signal using a first mask, performing color-processing with respect to the video signal, and dithering the color-processed video signal using a second mask which is related to the first mask. Accordingly, dithering is performed using related masks, thus preventing poor gradation of video signal.
Abstract:
The present invention relates to a decorative sheet for decorating a surface of a three-dimensional molded material, a method for manufacturing same, and a method for decorating the surface of the molded material using same. The method for manufacturing the decorative sheet includes: a printed sheet preparation step of preparing a printed sheet including a base layer and a surface treatment layer; an boding step of preparing an adhesive layer containing an adhesive and a release film layer by applying the adhesive onto a release film to be layered onto a back side of the adhesive layer, and laminating the printed sheet on a surface of the adhesive layer being bonded; and a drying-solidifying step in which the adhesive layer is changed from a liquid state into a solid state.
Abstract:
The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.
Abstract:
A method for fabricating a storage node of a semiconductor device includes forming a sacrificial dielectric pattern with a storage node hole on a substrate, forming a support layer on the sacrificial dielectric pattern, forming a storage node, supported by the support layer, in the storage node hole, performing a full dip-out process to expose the outer wall of the storage node, and performing a cleaning process for removing or reducing a bridge-causing material formed on the surface of the support layer.
Abstract:
An image processing apparatus which performs dithering to an input image, includes: an input value storage unit which stores an input value to generate a mask seed value corresponding to a single pixel in a unit area among a plurality of pixels displaying an image, wherein the unit area includes a first line and at least second line; and a seed value generator which generates the mask seed value corresponding to one of pixels in the at least one second line among the pixels of the unit area based on the input value stored in the input value storage unit.
Abstract:
A stack type semiconductor package and a method of fabricating the stack type semiconductor package. The stack type semiconductor package includes: a lower semiconductor package including a circuit board, a semiconductor chip which is disposed on an upper surface of the circuit board, via-pads which are arrayed on the upper surface of the circuit board around the semiconductor chip, and an encapsulation layer which encapsulates the upper surface of the circuit board and has via-holes through which the via-pads are exposed; and an upper semiconductor package which is stacked on the encapsulation layer, is electrically connected to the lower semiconductor package, and comprises internal connection terminals which are formed on a lower surface of the upper semiconductor package.
Abstract:
In a thin film transistor and a display device provided with the same, a thin film transistor according to an exemplary embodiment includes: a semiconductor layer including a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region; a gate electrode overlapping the channel region; a source electrode contacting the source region; and a drain electrode contacting the drain region. The channel region includes a main channel portion, a source channel portion, and a drain channel portion, and the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other. The light-doped source region is disposed between the source channel portion and the source region and the light-doped drain region is disposed between the drain channel portion and the drain region.