公开(公告)号：US5925896A

公开(公告)日：1999-07-20

申请号：US813427

申请日：1997-03-10

Applicant: Achyut Kumar Dutta

Inventor： Achyut Kumar Dutta

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44 ,  H01L27/15

CPC classification number: H01L33/44 ,  H01L33/10 ,  H01L33/14 ,  H01L33/42 ,  H01L33/46 ,  H01L33/02 ,  H01L33/38

Abstract: A surface-emitting semiconductor optical device is provided, which has a high external quantum efficiency and a high coupling efficiency with an optical fiber. This device has a multilayer device structure including an optical absorption layer formed by a semiconductor substrate, a semiconductor mirror layer, a first (n- or p-type) semiconductor cladding layer, a semiconductor active layer, a second (p- or n-type) semiconductor cladding layer, and a current spreading layer formed by a transparent and doped semiconductor wafer. These layers are stacked along a stacking direction of the device structure. The absorption layer is located at a first end of the body. The active layer is sandwiched between the first and second cladding layers. The mirror layer is located between the first cladding layer and the absorption layer, and serves to reflect the light generated by the active layer toward the current spreading layer. The current spreading layer is located at a second end of the body opposite to the first end. First and second electrodes are formed at the first and second ends of the body, respectively. An exposed surface of the current spreading layer serves as a light-emitting surface.

Abstract translation: 提供了具有高的外部量子效率和与光纤的高耦合效率的表面发射半导体光学器件。 该器件具有包括由半导体衬底，半导体镜层，第一（n型或p型）半导体包覆层，半导体有源层，第二（p-或n-型）半导体层形成的光吸收层的多层器件结构， 型）半导体包层，以及由透明和掺杂的半导体晶片形成的电流扩散层。 这些层沿着器件结构的层叠方向堆叠。 吸收层位于身体的第一端。 有源层夹在第一和第二覆层之间。 镜层位于第一包层和吸收层之间，用于将由有源层产生的光朝向电流扩展层反射。 电流扩散层位于与第一端相对的本体的第二端。 第一和第二电极分别形成在主体的第一和第二端。 电流扩散层的暴露表面用作发光表面。

公开(公告)号：US5821569A

公开(公告)日：1998-10-13

申请号：US706517

申请日：1996-09-04

Applicant: Achyut Kumar Dutta

Inventor： Achyut Kumar Dutta

IPC: H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/58 ,  H01L33/00

CPC classification number: H01L33/30 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/385 ,  H01L33/44

Abstract: An n-type GaAs layer as a buffer layer, an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, an active layer, a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, a thin layer of Al.sub.x Ga.sub.1-x As layer (x.gtoreq.0.9), an Al.sub.0.7 Ga.sub.0.3 As layer as a current spreading layer and a high doped p-type GaAs cap layer are sequentially grown on an n-type GaAs layer of a substrate. As the active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P based bulk or multi-quantum well is employed. As the current spreading layer, an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.7) is employed. The current spreading layer is a p-type III-IV compound semiconductor having wider band gap than a band gap of a material used for forming the active layer, and being established a lattice matching with the lower p-type cladding layer. After mesa etching up to the cladding layer, growth of selective oxide is performed at a part of the AlGaAs layer. BY this, a block layer (selective oxide of AlGaAs) is formed. By this blocking layer, a light output power and a coupling efficiency are improved.