公开(公告)号：US11628402B2

公开(公告)日：2023-04-18

申请号：US16991225

申请日：2020-08-12

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Shimizu ,  Tetsuya Kamimura ,  Tadashi Omatsu ,  Satomi Takahashi

IPC: B01D61/58 ,  B01D3/14 ,  B01D61/08 ,  B01D61/18 ,  B01D65/02 ,  B01D69/02 ,  B01D69/12 ,  B01D71/26 ,  B01D71/36 ,  B01D71/56 ,  H01L21/67 ,  G03F7/26

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.

公开(公告)号：US20230099612A1

公开(公告)日：2023-03-30

申请号：US17965554

申请日：2022-10-13

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: C09G1/02 ,  H01L21/306

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a chemical mechanical polishing method and a method for treating a semiconductor substrate.
The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor substrate, which includes a component A having two or more onium structures in the molecule and water, and has a pH of 6.0 to 13.5 at 25° C.

公开(公告)号：US11559758B2

公开(公告)日：2023-01-24

申请号：US16745493

申请日：2020-01-17

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Shimizu ,  Tetsuya Kamimura

IPC: B01D29/58 ,  B01D29/00 ,  B01D29/23 ,  B01D39/16 ,  B01D61/02 ,  B01D63/06 ,  B01D69/02 ,  B01D69/04

Abstract: An object of the present invention is to provide a filtering device which makes it possible to obtain a chemical liquid having excellent performance and enables filter media to have sufficiently long pot life. Another object of the present invention is to provide a purification device, a chemical liquid manufacturing device, a filtered substance to be purified, a chemical liquid, and an actinic ray-sensitive or radiation-sensitive resin composition. A filtering device according to an embodiment of the present invention has a first filter unit including a first filter, which satisfies at least one condition selected from the group consisting of following conditions 1 to 3, and a housing accommodating the first filter and a second filter unit including a second filter different from the first filter and a housing accommodating the second filter, in which the first filter unit and the second filter unit are independently disposed in a pipe line through which a substance to be purified is supplied. Condition 1: the filter has a filter medium including two or more layers containing materials different from each other. Condition 2: the filter has a filter medium including two or more layers having different pore structures. Condition 3: the filter has a filter medium including one layer in which different materials are mixed together.

公开(公告)号：US11359113B2

公开(公告)日：2022-06-14

申请号：US16939227

申请日：2020-07-27

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/321

Abstract: A polishing liquid, which is used for chemical mechanical polishing, includes ceria particles having an average aspect ratio of 1.5 or more; and an anionic polymer or a cationic polymer, in which a pH of the polishing liquid is 3 to 8. In a case where the polishing liquid contains the anionic polymer, the polishing liquid further includes an inorganic acid or an organic acid including at least one group selected from the group consisting of a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, and a sulfonic acid group.

公开(公告)号：US11175585B2

公开(公告)日：2021-11-16

申请号：US16172027

申请日：2018-10-26

Applicant: FUJIFILM Corporation

Inventor： Satoru Murayama ,  Tetsuya Shimizu ,  Tetsuya Kamimura

IPC: G03F7/32 ,  H01L21/027 ,  G03F7/039 ,  G03F7/40

Abstract: An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

公开(公告)号：US11072767B2

公开(公告)日：2021-07-27

申请号：US16774220

申请日：2020-01-28

Applicant: FUJIFILM Corporation

Inventor： Tomonori Takahashi ,  Tetsuya Kamimura

IPC: C11D7/32 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

Abstract: A treatment liquid for a semiconductor device is a treatment liquid including water, an organic solvent, and two or more nitrogen-containing aromatic heterocyclic compounds.

公开(公告)号：US10401726B2

公开(公告)日：2019-09-03

申请号：US15288588

申请日：2016-10-07

Applicant: FUJIFILM Corporation

Inventor： Hirotaka Takishita ,  Tetsuya Kamimura ,  Hirokazu Kyota ,  Toshihide Ezoe ,  Kazuto Shimada

IPC: G03F7/00 ,  G02F1/361 ,  C08F2/44 ,  C08L101/00 ,  C09B67/46 ,  G02B5/22 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  C08F2/48 ,  C09D4/00 ,  C09B67/00 ,  C09B67/22 ,  G03F7/027 ,  G03F7/105 ,  G02B5/20 ,  H01L27/146

Abstract: A coloring composition includes colorants, polymerizable compounds, and a resin, in which a ratio P/M of a mass P of the colorants to a mass M of the polymerizable compounds is 0.05 to 0.35, a content of the polymerizable compounds is 25 to 65 mass % with respect to a total solid content of the coloring composition, a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 nm or longer and shorter than 580 nm to a minimum value B of an absorbance in a wavelength range of 580 nm to 770 nm is 0.3 to 3, and a ratio C/D of a minimum value C of an absorbance in a wavelength range of 400 nm to 750 nm to a maximum value D of an absorbance in a wavelength range of 850 nm to 1300 nm is 5 or higher.

公开(公告)号：US10241247B2

公开(公告)日：2019-03-26

申请号：US15614742

申请日：2017-06-06

Applicant: FUJIFILM Corporation

Inventor： Yoshinori Taguchi ,  Tetsuya Kamimura ,  Akiko Yoshii

IPC: G02B5/20 ,  G03F7/004 ,  G02B5/22 ,  C09B29/33 ,  C09B57/04 ,  G03F7/033 ,  C08G18/32 ,  C08G18/34 ,  G03F7/032 ,  G03F7/038 ,  C08G18/81 ,  C09B67/22 ,  C08G18/28 ,  G03F7/00 ,  G03F7/105 ,  G02F1/1335

Abstract: A coloring composition includes Color Index Pigment Red 264, a graft resin having an acid group, a photopolymerizable compound, and a photopolymerization initiator.

公开(公告)号：US09548217B2

公开(公告)日：2017-01-17

申请号：US14711070

申请日：2015-05-13

Applicant: FUJIFILM CORPORATION

Inventor： Naotsugu Muro ,  Tetsuya Kamimura ,  Tadashi Inaba ,  Atsushi Mizutani

IPC: H01L21/461 ,  H01L21/3213 ,  H01L21/311 ,  C09K13/08

CPC classification number: H01L21/32134 ,  C09K13/08 ,  H01L21/31144

Abstract: An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, selecting a substrate in which a surface oxygen content of the first layer is from 0.1 to 10% by mole, and applying an etching liquid containing a hydrofluoric acid compound and an oxidizing agent to the substrate and thereby removing the first layer.

Abstract translation: 一种蚀刻方法，其特征在于，在具有含有氮化钛（TiN）的第一层和含有过渡金属的第二层的基板的处理时，选择其中第一层的表面氧含量为0.1〜10％ 并将含有氢氟酸化合物和氧化剂的蚀刻液施加到基材上，从而除去第一层。