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公开(公告)号：US20240027684A1
公开(公告)日：2024-01-25
申请号：US17869065
申请日：2022-07-20
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian
CPC classification number: G02B6/125 , G02B6/1228 , G02B6/136 , G02B2006/12061
Abstract: Structures for a waveguide crossing and methods of forming such structures. The structure comprises a first waveguide core including a first section, a second section, and a first longitudinal axis. The first section and the second section are aligned along the first longitudinal axis, the first section is terminated by a first end, the second section is terminated by a second end, and the first end of the first section is longitudinally spaced from the second end of the second section by a gap. The structure further comprises a second waveguide core having a second longitudinal axis angled relative to the first longitudinal axis. The second longitudinal axis of the second waveguide core crosses the first longitudinal axis of the first waveguide core within the gap.
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公开(公告)号：US20240012200A1
公开(公告)日：2024-01-11
申请号：US17861345
申请日：2022-07-11
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian
CPC classification number: G02B6/124 , G02B6/1228 , G02B6/13 , G02B2006/12121
Abstract: Structures for a grating that may be deployed in edge coupler and methods of forming such structures. The structure comprises a waveguide core positioned on a substrate. The waveguide core includes a longitudinal axis and a grating having first and second segments positioned along the longitudinal axis in a spaced-apart arrangement. The first segment has a first sidewall sloped at a first angle relative to the longitudinal axis and a second sidewall oriented transverse to the longitudinal axis. The second segment has a first sidewall sloped at a second angle relative to the longitudinal axis and a second sidewall oriented transverse to the longitudinal axis. The first sidewall of the first segment positioned adjacent to the first sidewall of the second segment.
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公开(公告)号：US20230417991A1
公开(公告)日：2023-12-28
申请号：US17850128
申请日：2022-06-27
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian , Koushik Ramachandran , Karen Nummy
CPC classification number: G02B6/1228 , G02B6/136 , G02B2006/12121
Abstract: Structures for a waveguide core and methods of fabricating such structures. The structure comprises a waveguide core including a section having a first trapezoidal portion and a second trapezoidal portion stacked with the first trapezoidal portion. The first trapezoidal portion has a first trapezoidal shape, and the second trapezoidal portion has a second trapezoidal shape different from the first trapezoidal shape.
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公开(公告)号：US11822120B2
公开(公告)日：2023-11-21
申请号：US17679405
申请日：2022-02-24
Applicant: GlobalFoundries U.S. Inc.
Inventor： Hemant Dixit , Yusheng Bian , Theodore Letavic
CPC classification number: G02B6/122 , G02B6/0026 , G02B6/43
Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.
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公开(公告)号：US11810989B2
公开(公告)日：2023-11-07
申请号：US17504614
申请日：2021-10-19
Applicant: GlobalFoundries U.S. Inc.
Inventor： Ajey Poovannummoottil Jacob , Yusheng Bian , Steven Shank
IPC: H01L31/0352 , H01L31/0232 , H01L31/18 , H01L31/028 , H01L31/103
CPC classification number: H01L31/035281 , H01L31/028 , H01L31/02327 , H01L31/103 , H01L31/1804 , H01L31/1872
Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.
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Patent Agency Ranking
公开(公告)号：US11803010B2
公开(公告)日：2023-10-31
申请号：US17524218
申请日：2021-11-11
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian
CPC classification number: G02B6/1228 , G02B6/12002 , G02B6/125
Abstract: Structures for an optical coupler and methods of fabricating a structure for an optical coupler. The structure includes a first waveguide core having a first tapered section and a second waveguide core having a second tapered section positioned adjacent to the first tapered section of the first waveguide core. The second tapered section is positioned with a lateral offset in a lateral direction relative to the first tapered section. The second tapered section is positioned with a vertical offset in a vertical direction relative to the first tapered section.
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公开(公告)号：US20230314730A1
公开(公告)日：2023-10-05
申请号：US17707403
申请日：2022-03-29
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian
IPC: G02B6/42
CPC classification number: G02B6/4203
Abstract: Structures for an edge coupler and methods of fabricating such structures. The structure includes a back-end-of-line stack located over a substrate. The back-end-of-line stack includes a waveguide core having a longitudinal axis and a tapered section with a width that varies with position along the longitudinal axis based on a non-linear function.
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公开(公告)号：US20230266533A1
公开(公告)日：2023-08-24
申请号：US17679431
申请日：2022-02-24
Applicant: GlobalFoundries U.S. Inc.
Inventor： Theodore Letavic , Yusheng Bian , Hemant Dixit
IPC: G02B6/122
CPC classification number: G02B6/1228 , G02B2006/12135
Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a substrate, an optical component including a waveguide core, and a back-end-of-line stack including a heat spreader layer. The optical component is positioned in a vertical direction between the substrate and the back-end-of-line stack. The waveguide core contains a first material having a first thermal conductivity, and the heat spreader layer contains a second material having a second thermal conductivity that is greater than the first thermal conductivity of the first material.
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公开(公告)号：US20230266529A1
公开(公告)日：2023-08-24
申请号：US17679405
申请日：2022-02-24
Applicant: GlobalFoundries U.S. Inc.
Inventor： Hemant Dixit , Yusheng Bian , Theodore Letavic
CPC classification number: G02B6/122 , G02B6/43 , G02B6/0026
Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.
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公开(公告)号：US11705529B2
公开(公告)日：2023-07-18
申请号：US17551544
申请日：2021-12-15
Applicant: GlobalFoundries U.S. Inc.
Inventor： Yusheng Bian , Asif Chowdhury
IPC: H01L31/0232 , H01L31/18 , H01L31/0203 , H01L31/101
CPC classification number: H01L31/02327 , H01L31/0203 , H01L31/101 , H01L31/18
Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.
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