公开(公告)号：US20170271375A1

公开(公告)日：2017-09-21

申请号：US15443079

申请日：2017-02-27

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI

IPC: H01L27/12 ,  H01L21/475 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

CPC classification number: H01L27/1225 ,  H01L21/475 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869

Abstract: A semiconductor device includes a first electrode, a first insulating layer on the first electrode, a second electrode on the first insulating layer, a second insulating layer on the second electrode, a first opening in the first insulating layer, the second electrode and the second insulating layer, the first opening reaching the first electrode, a first oxide semiconductor layer in the first opening, the first oxide semiconductor layer being connected with the first electrode and the second electrode, a first gate electrode facing the first oxide semiconductor layer, and a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode.

公开(公告)号：US20170104014A1

公开(公告)日：2017-04-13

申请号：US15388126

申请日：2016-12-22

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A semiconductor device includes a first insulating layer having a first side wall, an oxide semiconductor layer located on the first side wall, a gate insulating layer located on the oxide semiconductor layer, the oxide semiconductor layer being located between the first side wall and the gate insulating layer, a gate electrode facing the oxide semiconductor layer located on the first side wall, the gate insulating layer being located between the oxide semiconductor layer and the gate electrode, a first electrode located below the oxide semiconductor layer and connected with one portion of the oxide semiconductor layer, and a second electrode located above the oxide semiconductor layer and connected with the other portion of the oxide semiconductor layer.

公开(公告)号：US20160197099A1

公开(公告)日：2016-07-07

申请号：US14976008

申请日：2015-12-21

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device includes a substrate, a first insulating layer having a first side wall, an oxide semiconductor layer on the first side wall, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, a first transparent conductive layer between the oxide semiconductor layer and the substrate, the first transparent conductive layer being connected with a first portion of the oxide semiconductor layer, a first electrode on the first insulating layer on the side opposite to the substrate, the first electrode being connected with a second portion of the oxide semiconductor layer, and a second transparent conductive layer connected with the first transparent conductive layer, the second transparent conductive layer forming the same layer with the first transparent conductive layer.

Abstract translation: 显示装置包括基板，具有第一侧壁的第一绝缘层，第一侧壁上的氧化物半导体层，面对氧化物半导体层的栅极电极，氧化物半导体层和栅电极之间的栅极绝缘层， 在所述氧化物半导体层和所述基板之间的第一透明导电层，所述第一透明导电层与所述氧化物半导体层的第一部分连接，所述第一绝缘层上与所述基板相反一侧的第一电极，所述第一电极 与所述氧化物半导体层的第二部分连接，以及与所述第一透明导电层连接的第二透明导电层，所述第二透明导电层与所述第一透明导电层形成相同的层。