公开(公告)号：US20080003737A1

公开(公告)日：2008-01-03

申请号：US11478702

申请日：2006-06-30

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: H01L21/8238

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US20070096300A1

公开(公告)日：2007-05-03

申请号：US11261236

申请日：2005-10-28

Applicant: Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

Inventor： Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

IPC: H01L23/10 ,  H01L23/043 ,  H01L21/00

CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可以改变期望的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

公开(公告)号：US20060204776A1

公开(公告)日：2006-09-14

申请号：US11163895

申请日：2005-11-03

Applicant: Jyh-Chen Chen ,  Gwo-Jiun Sheu

Inventor： Jyh-Chen Chen ,  Gwo-Jiun Sheu

IPC: H01L29/12 ,  G01K5/68 ,  B21D39/00

CPC classification number: C23C16/30 ,  B81B3/0072 ,  B81C2201/0167 ,  C23C14/06 ,  G01K5/62 ,  G01K5/68 ,  Y10T428/12493 ,  Y10T428/125 ,  Y10T428/12528 ,  Y10T428/12535

Abstract: A structure of thermal stress compensation at least comprises a substrate, a first film and a second film. The substrate has a first positive coefficient of thermal expansion. The first film having a second positive coefficient of thermal expansion is over the substrate. The second film having a third negative coefficient of thermal expansion is over the substrate.

Abstract translation: 热应力补偿的结构至少包括基底，第一膜和第二膜。 基板具有第一正的热膨胀系数。 具有第二正热膨胀系数的第一膜超过衬底。 具有第三负热膨胀系数的第二膜超过衬底。

公开(公告)号：US07046411B1

公开(公告)日：2006-05-16

申请号：US11118573

申请日：2005-04-29

Applicant: James G. Fleming

Inventor： James G. Fleming

IPC: H01H51/22 ,  G02B26/08

CPC classification number: B81B3/0032 ,  B81B2201/045 ,  B81B2203/053 ,  B81C2201/0164 ,  B81C2201/0167 ,  G02B26/0841 ,  Y10S359/904

Abstract: A microelectromechanical (MEM) apparatus is disclosed which includes one or more tensile-stressed actuators that are coupled through flexures to a stage on a substrate. The tensile-stressed actuators, which can be formed from tensile-stressed tungsten or silicon nitride, initially raise the stage above the substrate without any applied electrical voltage, and can then be used to control the height or tilt angle of the stage. An electrostatic actuator can also be used in combination with each tensile-stressed actuator. The MEM apparatus has applications for forming piston micromirrors or tiltable micromirrors and independently addressable arrays of such devices.

Abstract translation: 公开了一种微机电（MEM）装置，其包括一个或多个拉伸应力致动器，其通过挠曲件耦合到基板上的台。 可以由拉应力钨或氮化硅形成的拉伸应力致动器最初将基底升高到基板上方，而没有任何施加的电压，然后可用于控制载物台的高度或倾斜角度。 静电致动器也可以与每个拉伸应力致动器组合使用。 MEM装置具有用于形成活塞微镜或可倾斜的微反射镜以及这种装置的独立可寻址阵列的应用。

公开(公告)号：US07026696B2

公开(公告)日：2006-04-11

申请号：US10788333

申请日：2004-03-01

Applicant: Akira Shimokohbe ,  Seiichi Hata

Inventor： Akira Shimokohbe ,  Seiichi Hata

IPC: H01L29/82

CPC classification number: B81C1/00682 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0167

Abstract: A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.

Abstract translation: 在基板上形成由具有过冷液相区域的非晶材料制成的薄膜。 然后，将薄膜加热至过冷液相区域内的温度，并通过其重量，机械外力，静电外力等变形，从而形成薄膜结构。 此后，将薄膜结构冷却至室温，从而防止薄膜的变形。

公开(公告)号：US20060057758A1

公开(公告)日：2006-03-16

申请号：US11226248

申请日：2005-09-15

Applicant: Kenichi Yokoyama

Inventor： Kenichi Yokoyama

IPC: H01L21/00

CPC classification number: B81C1/00952 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81C2201/0167 ,  H01L31/18

Abstract: A method for manufacturing a semiconductor physical quantity sensor including a support substrate, a movable electrode, a fixed electrode is provided. The method includes the steps of: preparing a multi-layered substrate; forming a compression stress layer on a part of a surface of the semiconductor layer; forming a trench in the semiconductor layer; and releasing the movable electrode from the substrate by removing the insulation film. In the step of releasing, the part of the semiconductor layer, on which the compression stress layer is disposed, is cambered by the compression stress toward a direction apart from the substrate.

公开(公告)号：US20050233492A1

公开(公告)日：2005-10-20

申请号：US10459619

申请日：2003-06-12

Applicant: Luc Ouellet ,  Robert Antaki

Inventor： Luc Ouellet ,  Robert Antaki

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00

CPC classification number: B81C1/00666 ,  B81B2207/015 ,  B81C2201/0167

Abstract: A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100 Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100 Mpa.

Abstract translation: 公开了一种制造硅基微结构的方法，其包括沉积掺杂有第一和第二掺杂剂的导电非晶硅，以产生具有小于+ / = 100Mpa的残余机械应力的结构。 掺杂剂可以连续沉积以产生具有小于+ / = 100Mpa的残余机械应力或同时产生具有小于+ / = 100Mpa的机械应力的层压结构的层压结构。

公开(公告)号：US20050050971A1

公开(公告)日：2005-03-10

申请号：US10894212

申请日：2004-07-19

Applicant: Robert Horning

Inventor： Robert Horning

IPC: B81B3/00 ,  B81C1/00 ,  B32B9/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T74/12

Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-boron layer onto the undoped layer.

Abstract translation: 描述了一种利用掺杂层在晶片中控制弓形的方法。 该方法包括将硅 - 锗层沉积到衬底上，将未掺杂的缓冲层沉积到硅 - 锗层上，以及在未掺杂的层上沉积硅 - 硼层。

公开(公告)号：US20040241994A1

公开(公告)日：2004-12-02

申请号：US10773114

申请日：2004-02-04

Inventor： Harald Bottner ,  Axel Schubert ,  Joachim Nurnus ,  Martin Joegle

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L35/32 ,  B81B3/0072 ,  B81C2201/0167 ,  H01L35/04

Abstract: A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

Abstract translation: 一种微机电装置及其制造方法，在基板上具有至少一层，特别是基板上的热电层，所述至少一层的热膨胀系数和基板的热膨胀系数大大不同。 至少一个层耦合到至少一个应力减小装置，用于目标地减小存在于该层中的横向机械应力。 这实现了无应力层或实现无压力生长。

公开(公告)号：US20040157426A1

公开(公告)日：2004-08-12

申请号：US10410158

申请日：2003-04-10

Inventor： Luc Ouellet ,  Robert Antaki

IPC: H01L021/8242

CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。