Abstract:
An optical integrated circuit may include a substrate including a single crystalline semiconductor material, a passive element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material, and an active element extending in a crystal orientation of the substrate and including the single crystalline semiconductor material.
Abstract:
An apparatus includes an optical semiconductor element comprising: a waveguide into which input light is input; a plurality of ring modulators that have different optical perimeter lengths and are optically coupled to the waveguide; and a control unit configured to selectively apply a modulation signal to at least one of the plurality of ring modulators having a resonant wavelength that is the same as a wavelength of the input light.
Abstract:
A frequency-conversion method that uses a nonlinear optical process to transfer energy between a surface-plasmon (SP) wave that is guided along an electrically conducting strip and a light beam that is guided along an optical waveguide whose core is adjacent to the electrically conducting strip. A periodic structure spatially modulates the nonlinear susceptibility of the waveguide core with a spatial period that is related to a momentum mismatch in the nonlinear optical process. The spatial modulation provides quasi-phase matching for the SP wave and the light beam and enables efficient energy transfer between them.
Abstract:
An optical frequency converter that uses a nonlinear optical process to transfer energy between a surface-plasmon (SP) wave that is guided along an electrically conducting strip and a light beam that is guided along an optical waveguide whose core is adjacent to the electrically conducting strip. The optical frequency converter has a periodic structure that spatially modulates the nonlinear susceptibility of the waveguide core with a spatial period that is related to a momentum mismatch in the nonlinear optical process. The spatial modulation provides quasi-phase matching for the SP wave and the light beam and enables efficient energy transfer between them.
Abstract:
There is provided a waveguide type optical device whose parasitic capacitance is reduced to allow an increase in signal transmission speed. Bottom electrode 41 is formed on substrate 2, bottom cladding 51 is formed on bottom electrode 41, and bottom core 62 is formed on bottom cladding 51. Top core 61 is formed on bottom core 62, top cladding 53 is formed on top core 61, and top electrode 42 is formed on top cladding 53. Two sides of top core 61 and bottom core 62 are covered with side cladding layer 52. Vertically overlapping portions of top electrode 42 and bottom electrode 41 are located almost at a same place as a region for a core layer composed of top core 61 and bottom core 62. The width of one from among top core 61 and bottom core 62 is satisfying a single mode condition, and the width of the other is almost equal to or more than the width of a field distribution.
Abstract:
An optical frequency converter that uses a nonlinear optical process to transfer energy between a surface-plasmon (SP) wave that is guided along an electrically conducting strip and a light beam that is guided along an optical waveguide whose core is adjacent to the electrically conducting strip. The optical frequency converter has a periodic structure that spatially modulates the nonlinear susceptibility of the waveguide core with a spatial period that is related to a momentum mismatch in the nonlinear optical process. The spatial modulation provides quasi-phase matching for the SP wave and the light beam and enables efficient energy transfer between them.
Abstract:
A hybrid strip-loaded EO polymer/sol-gel modulator in which the sol-gel core waveguide does not lie below the active EO polymer waveguide increases the higher electric field/optical field overlap factor Γ and reduces inter-electrode separation d thereby lowering the modulator's half-wave drive voltage Vπ, reducing insertion loss and improving extinction. The strip-loaded modulator comprises an EO polymer layer that eliminates optical scattering caused by sidewall roughness due to etching. Light does not encounter rough edges as it transitions to and from the sol-gel and EO polymer waveguides. This reduces insertion loss.
Abstract:
A harmonics generating device including a supporting substrate; a wavelength conversion layer having a three-dimensional optical waveguide provided with a periodic domain inversion structure therein, a base adhesive layer for adhering a lower face of the wavelength conversion layer to the supporting substrate; an upper-side substrate provided on an upper face side of the wavelength conversion layer; an upper-side adhesive layer for adhering the wavelength conversion layer to the upper-side substrate; an incident face of a fundamental wave, a projection face of higher harmonics, a first side face between the incident face and the projection face; and a second side face opposing the first side face. A first conductive material contacts the first side face, a second conductive material contacts the second side face, and the first and second conductive materials are electrically connected.
Abstract:
An electro-optical modulator is provided. The electro-optical modulator has a substrate. A first insulator layer, an optical waveguide, a first doped semiconductor layer, a second insulator layer, a second doped semiconductor layer, and a third insulator layer are sequentially disposed over the substrate. The optical waveguide is adapted for transmitting a light wave. The optical waveguide includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer. The first semiconductor layer is disposed on the first insulator layer. The first doped semiconductor layer is disposed on the first insulator layer, and positioned at two opposite sides of the optical waveguide for electrically connecting the optical waveguide. The second insulator layer is disposed on the substrate for covering the first doped semiconductor layer. The second doped semiconductor layer is disposed on the second insulator layer and electrically connected to the third semiconductor layer.
Abstract:
An opto-electronic modulator includes a Mach-Zehnder structure that comprises p+in+-diodes in both arms of the Mach-Zehnder structure. The Mach-Zehnder structure is formed by waveguides so as to confine an optical mode in the opto-electronic modulator.
Abstract translation:光电调制器包括Mach-Zehnder结构,其包括在Mach-Zehnder结构的两个臂中的+ SUPER +二极管中的p + +。 Mach-Zehnder结构由波导形成,以便将光学模式限制在光电调制器中。