Electric part
    82.
    发明申请
    Electric part 有权
    电气部分

    公开(公告)号:US20070040488A1

    公开(公告)日:2007-02-22

    申请号:US11429224

    申请日:2006-05-08

    Abstract: An electric part including a matrix-shaped nonconductive base member, and a carbon nanotube group that is sealed within the nonconductive base member and includes at least one of a carbon nanotube and a plurality carbon nanotubes that are electrically connected to each other. Substantially only an end portion of the carbon nanotube or at least carbon nanotube contained in the plurality of carbon nanotubes may be exposed from one surface of the nonconductive base member, and an electrode may be connected to a side surface of at least one carbon nanotube included in the carbon nanotube group.

    Abstract translation: 包括矩阵状的非导电性基材的电气部件和密封在非导电性基材内的碳纳米管组,并且包括彼此电连接的碳纳米管和多个碳纳米管中的至少一种。 基本上只有碳纳米管的末端部分或至少包含在多个碳纳米管中的碳纳米管可以从非导电基底部件的一个表面露出,并且电极可以连接到包含至少一个碳纳米管的侧表面 在碳纳米管组中。

    Method of manufacturing electronic device
    83.
    发明授权
    Method of manufacturing electronic device 失效
    制造电子装置的方法

    公开(公告)号:US07065857B2

    公开(公告)日:2006-06-27

    申请号:US10370703

    申请日:2003-02-24

    Abstract: The method of manufacturing an electric part including a matrix-shaped nonconductive base member, and a carbon nanotube group that is sealed within the nonconductive base member and includes at least one of a carbon nanotube and a plurality carbon nanotubes that are electrically connected to each other. According to the method, substantially only an end portion of the carbon nanotube or at least carbon nanotube contained in the plurality of carbon nanotubes may be exposed from one surface of the nonconductive base member, and an electrode may be connected to a side surface of at least one carbon nanotube included in the carbon nanotube group.

    Abstract translation: 制造包括矩阵状非导电性基材的电气部件的方法和密封在非导电性基材内的碳纳米管组,并且包括彼此电连接的碳纳米管和多个碳纳米管中的至少一种 。 根据该方法,基本上只有碳纳米管的端部或至少包含在多个碳纳米管中的碳纳米管可以从非导电性基材的一个表面露出,电极可以连接到侧面 包含在碳纳米管组中的至少一个碳纳米管。

    Transistor that uses carbon nanotube ring
    87.
    发明授权
    Transistor that uses carbon nanotube ring 失效
    使用碳纳米管环的晶体管

    公开(公告)号:US06590231B2

    公开(公告)日:2003-07-08

    申请号:US09923448

    申请日:2001-08-08

    Abstract: A transistor of nanometer size is provided, which is capable of high-speed operation and operates at room temperatures by using carbon nanotubes for semiconductor devices. The transistor uses a carbon nanotube ring having semiconductor characteristics as a semiconductor material, or a carbon nanotube ring having conductivity or semiconductor characteristics as an electrode material.

    Abstract translation: 提供纳米尺寸的晶体管,其能够通过使用用于半导体器件的碳纳米管来高速操作并在室温下操作。 晶体管使用具有半导体特性的碳纳米管环作为半导体材料,或具有导电性或半导体特性的碳纳米管环作为电极材料。

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