公开(公告)号：US07064035B2

公开(公告)日：2006-06-20

申请号：US10888104

申请日：2004-07-09

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/8236

CPC classification number: H01L27/112 ,  H01L27/1124

Abstract: A Mask ROM and a method for fabricating the same are described. The Mask ROM comprises a substrate, a plurality of gates on the substrate, a gate oxide layer between the gates and the substrate, a plurality of buried bit lines in the substrate between the gates, an insulator on the buried bit lines and between the gates, a plurality of word lines each disposed over a row of gates perpendicular to the buried bit lines, and a coding layer between the word lines and the gates.

Abstract translation: 描述了掩模ROM及其制造方法。 掩模ROM包括衬底，衬底上的多个栅极，栅极和衬底之间的栅极氧化物层，在栅极之间的衬底中的多个掩埋位线，掩埋位线上的绝缘体和栅极之间 ，多个字线，各自设置在与掩埋位线垂直的一行栅极上，以及在字线和栅极之间的编码层。

公开(公告)号：US20060110689A1

公开(公告)日：2006-05-25

申请号：US10995653

申请日：2004-11-23

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00

CPC classification number: G03F7/2041 ,  G03F7/168 ,  H01L21/67051 ,  H01L21/67057

Abstract: A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.

Abstract translation: 一种方法包括在基底上形成光致抗蚀剂，使用用至少一个兆声源驱动的漂洗液冲洗光致抗蚀剂，在浸入液体中时将光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。

公开(公告)号：US20050250054A1

公开(公告)日：2005-11-10

申请号：US10937177

申请日：2004-09-09

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/40 ,  G03F7/2041

Abstract: A method of forming a photolithographic mask for use in fabricating a semiconductor device is provided. The method includes forming a layer of photoresist material on a wafer and exposing the photoresist material to a light source. The photoresist material is developed, and before the wafer dries, the wafer is cleaned with one or more cleaning liquids. The cleaning liquid may be a surfactant, an acid, a dissolved gas solution (e.g., CO2, SO2, SO3, NH3, NO2, or the like), deionized water, or the like. Thereafter, the wafer is dried. The wafer may be dried, for example, by a spin dry process, a gas purge process using, for example, compressed dry air, N2, CO2, Ar, or the like, or a drying alcohol such as IPA vapor.

Abstract translation: 提供一种形成用于制造半导体器件的光刻掩模的方法。 该方法包括在晶片上形成光致抗蚀剂材料层并将光致抗蚀剂材料暴露于光源。 显影光致抗蚀剂材料，并且在晶片干燥之前，用一种或多种清洁液体清洁晶片。 清洗液体可以是表面活性剂，酸，溶解气体溶液（例如CO 2，SO 2，SO 3，NH 3， SUB> 3，NO 2 2等），去离子水等。 此后，将晶片干燥。 可以例如通过旋转干燥方法干燥晶片，使用例如压缩干燥空气，N 2，CO 2，Ar， 或诸如IPA蒸气的干燥醇。

公开(公告)号：US06806535B2

公开(公告)日：2004-10-19

申请号：US10248467

申请日：2003-01-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L2976

CPC classification number: H01L27/1126 ,  H01L27/112

Abstract: A method of fabricating a non-volatile memory is provided. A longitudinal strip of stacked layer is formed over a substrate. The longitudinal strip is a stacked layer including a gate dielectric layer, a conductive layer and a cap layer. A buried bit line is formed in the substrate on each side of the longitudinal strip. The longitudinal strip is patterned to form a plurality of stacked blocks. Thereafter, a dielectric layer is formed over the substrate. The dielectric layer exposes the cap layer of the stacked blocks. Some cap layers of the stacked blocks are removed to expose the conductive layer underneath. A word line is formed over the dielectric layer to connect stacked blocks in the same row serially together.

Abstract translation: 提供了一种制造非易失性存储器的方法。 堆叠层的纵向条形成在衬底上。 纵向条是包括栅介电层，导电层和盖层的堆叠层。 在纵向条的每一侧上的基板中形成掩埋位线。 图案化纵向条以形成多个堆叠的块。 此后，在衬底上形成电介质层。 电介质层暴露堆叠块的盖层。 去除堆叠块的一些盖层以露出下面的导电层。 在电介质层上形成一个字线，以将串联在同一行中的堆叠块连接起来。

公开(公告)号：US06632587B2

公开(公告)日：2003-10-14

申请号：US09861623

申请日：2001-05-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F726

CPC classification number: G03F7/40 ,  Y10S430/143

Abstract: A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows. Expose photoresist by an electron beam while an etching process being performed, or alternately expose photoresist by an electron beam and perform an etch process.

Abstract translation: 至少包括如下的增强抗蚀剂抗蚀刻能力的方法。 提供基板，在基板上形成具有图案的光致抗蚀剂，将光致抗蚀剂和基板放置在低压环境中，并通过电子束处理光致抗蚀剂以使至少部分光致抗蚀剂硬化。 该方法通常在蚀刻处理之前进行，但是也可以如下进行修改。 当进行蚀刻处理时，通过电子束曝光光致抗蚀剂，或者通过电子束交替地曝光光致抗蚀剂并进行蚀刻处理。

公开(公告)号：US06489251B2

公开(公告)日：2002-12-03

申请号：US09777877

申请日：2001-02-07

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21302

CPC classification number: H01L27/11253 ,  H01L27/112 ,  H01L27/1122

Abstract: The present invention discloses a method of forming a slope lateral structure. In this invention, the silicon nitride and the silicon hydroxide with different etching rates are used. Thus, when the silicon nitride is etching, the top and laterals portion of the silicon hydroxide is suffering the slight etching. So that, when the silicon nitride is etched completely, a slope lateral silicon hydroxide is formed, because of the different etching time on the top and the bottom portion of the silicon hydroxide. Using the present invention, the conventional NROM process problem, which the wordlines are connected by the residue on the laterals of the protective layer after etching process can be solved.

Abstract translation: 本发明公开了一种形成倾斜侧面结构的方法。 在本发明中，使用具有不同蚀刻速率的氮化硅和氢氧化硅。 因此，当氮化硅蚀刻时，氢氧化硅的顶部和侧面部分遭受轻微蚀刻。 因此，当氮化硅被完全蚀刻时，由于氢氧化硅的顶部和底部上的蚀刻时间不同，因此形成斜面侧向氢氧化硅。 使用本发明，可以解决在蚀刻处理之后，保护层的边缘上的残留物与字线连接的常规NROM工艺问题。

公开(公告)号：US06423147B1

公开(公告)日：2002-07-23

申请号：US09682134

申请日：2001-07-26

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B08B300

CPC classification number: H01L21/02052 ,  B08B3/08 ,  H01L21/321 ,  Y10S134/902

Abstract: A method of removing small particles remaining on a surface of a semiconductor wafer and preventing a silicide layer covering the semiconductor wafer from corroding starts by controlling a temperature of the semiconductor wafer to between room temperature and 45° C. Then, a cleaning solution of a temperature between 0° C. and 45° C. is utilized to clean the semiconductor wafer to effectively remove small particles remaining on the surface of the semiconductor wafer and prevent the silicide layer from corrosion by the cleaning solution. Therein, the cleaning solution is comprised of a pre-determined volume ratio of hydrogen peroxide (H2O2), ammonia (NH4OH), and deionized water.

Abstract translation: 通过将半导体晶片的温度控制在室温和45℃之间，去除残留在半导体晶片表面上的小颗粒并防止覆盖半导体晶片的硅化物层腐蚀开始的方法。然后， 使用0℃至45℃之间的温度来清洁半导体晶片以有效地去除残留在半导体晶片表面上的小颗粒，并防止硅化物层被清洁溶液腐蚀。 其中，清洁溶液由预定体积比的过氧化氢（H 2 O 2），氨（NH 4 OH）和去离子水组成。

公开(公告)号：US20170026502A1

公开(公告)日：2017-01-26

申请号：US15071122

申请日：2016-03-15

Applicant: Chi Wen LIU ,  Ching Yu CHANG ,  Kuo Ching CHIANG

Inventor： Chi Wen LIU ,  Ching Yu CHANG ,  Kuo Ching CHIANG

IPC: H04M1/253 ,  H04L29/06 ,  H04W4/00

CPC classification number: H04M1/2535 ,  G10L13/00 ,  G10L15/26 ,  H04L29/06993 ,  H04L65/403 ,  H04M1/72502 ,  H04M1/72519 ,  H04M2250/02 ,  H04M2250/06 ,  H04W4/80 ,  H04W84/12 ,  H04W88/06

Abstract: A portable device can transmit information through one of a mobile phone network and an Internet, wherein the portable device includes a text-based communication module to allow a user may synchronously transmit or receive data through a local area network, wherein the data is text, audio, video or the combination thereof. The text-based communication module of the portable device includes a text-to-speech recognition module used to convert a text data for outputting the text data by vocal, and a read determination module for determining read target terminals and unread target terminals when a user of the portable phone device activates the read determination module.

Abstract translation: 便携式设备可以通过移动电话网络和因特网之一发送信息，其中便携式设备包括基于文本的通信模块，以允许用户通过局域网同步地发送或接收数据，其中数据是文本， 音频，视频或其组合。 便携式设备的基于文本的通信模块包括用于转换用于通过声音输出文本数据的文本数据的文本到语音识别模块，以及用于当用户确定读取目标终端和未读取目标终端的读取确定模块 的便携式电话装置激活读取确定模块。

公开(公告)号：US09046785B2

公开(公告)日：2015-06-02

申请号：US12649462

申请日：2009-12-30

Applicant: Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: G03F7/42 ,  G03F7/40 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/42 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/40 ,  G03F7/422 ,  G03F7/423 ,  H01L21/30604 ,  H01L21/31133

Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.

Abstract translation: 提供一种光致抗蚀剂，其包括具有可破坏的主链的聚合物和不与聚合物结合的光酸产生剂。 此外，提供了制造半导体器件的方法。 该方法包括提供器件衬底。 材料层形成在衬底上。 在材料层上形成光致抗蚀剂材料。 光致抗蚀剂材料具有包括骨架的聚合物。 图案化光致抗蚀剂材料以形成图案化的光致抗蚀剂层。 然后对材料层进行制造工艺，其中图案化的光致抗蚀剂层在制造过程中用作掩模。 此后，以破坏聚合物主链的方式处理图案化的光刻胶层。 然后去除图案化的光致抗蚀剂层。

公开(公告)号：US08822347B2

公开(公告)日：2014-09-02

申请号：US12430614

申请日：2009-04-27

Applicant: Chien-Wei Wang ,  Ching-Yu Chang

Inventor： Chien-Wei Wang ,  Ching-Yu Chang

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/266 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/0332

Abstract: A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.

Abstract translation: 在半导体衬底上形成湿溶性光刻层的系统包括提供衬底，在衬底上沉积包括第一材料的第一层，以及在衬底上沉积包含第二材料的第二层。 在一个实施例中，第一材料包括与第二材料不同的组成，第一层和第二层之一包括硅。