公开(公告)号：US20150340446A1

公开(公告)日：2015-11-26

申请号：US14708491

申请日：2015-05-11

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Hao-Chuan LAI

IPC: H01L29/36 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/36 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor substrate includes: a substrate; a gate disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate; an active layer disposed on the gate insulating layer and above the gate, and the active layer has a first oxygen vacancy portion and a second oxygen vacancy portion; a source electrode and a drain electrode disposed on the active layer, the source electrode is connected to the first oxygen vacancy portion, and the drain electrode is connected to the second oxygen vacancy portion.

Abstract translation: 薄膜晶体管衬底包括：衬底; 设置在基板上的栅极; 栅极绝缘层，设置在所述基板上并覆盖所述栅极; 设置在所述栅极绝缘层上并在所述栅极上方的有源层，所述有源层具有第一氧空位部分和第二氧空位部分; 设置在有源层上的源电极和漏电极，源电极连接到第一氧空位部分，漏电极连接到第二氧空位部分。

公开(公告)号：US20150228798A1

公开(公告)日：2015-08-13

申请号：US14610085

申请日：2015-01-30

Applicant: Innolux Corporation

Inventor： Kuan-Feng LEE ,  Ming-Chang LIN ,  Tzu-Min YAN

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/417 ,  H01L27/12

CPC classification number: H01L27/3258 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869 ,  H01L2251/301 ,  H01L2251/303

Abstract: A display panel whose TFT substrate comprises a substrate, a gate layer, a gate dielectric layer, a semiconductor layer, a first electrode layer, a first passivation layer, a second passivation layer, a via and a second electrode layer is provided. The gate layer is disposed on the substrate. The gate dielectric layer is disposed on the gate layer. The semiconductor layer is disposed on the gate dielectric layer. The first electrode layer is disposed on the semiconductor layer. The first and second passivation layers are sequentially disposed on the first electrode layer. The via penetrates the passivation layers to expose the first electrode layer. The second electrode layer is electrically connected to the first electrode layer through the via. The first and second passivation layers have first and second taper angles respectively. The difference between the first and second taper angles is below 30°.

Abstract translation: 提供了TFT基板包括基板，栅极层，栅极介电层，半导体层，第一电极层，第一钝化层，第二钝化层，通孔和第二电极层的显示面板。 栅极层设置在基板上。 栅极电介质层设置在栅极层上。 半导体层设置在栅介质层上。 第一电极层设置在半导体层上。 第一和第二钝化层依次设置在第一电极层上。 通孔穿透钝化层以露出第一电极层。 第二电极层通过通孔与第一电极层电连接。 第一和第二钝化层分别具有第一和第二锥角。 第一和第二锥角之间的差值低于30°。

公开(公告)号：US20150206980A1

公开(公告)日：2015-07-23

申请号：US14675973

申请日：2015-04-01

Applicant: INNOCOM TECHNOLOGY(SHENZHEN) CO., LTD. ,  InnoLux Corporation

Inventor： Kuan-Feng LEE

IPC: H01L29/786 ,  H01L21/027 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L21/0274 ,  H01L21/0334 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869

Abstract: An embodiment of the invention provides a manufacturing method of a thin film transistor substrate including: sequentially forming a gate electrode, a gate insulating layer covering the gate electrode, an active material layer, and a photo-sensitive material layer on a first substrate; performing a photolithography process by using a half tone mask to form a photo-sensitive protective layer which is above the gate electrode and has a first recess and a second recess; etching the active material layer by using the photo-sensitive protective layer as a mask to form an active layer; removing a portion of the photo-sensitive protective layer at bottoms of the first recess and the second recess to expose a first portion and a second portion of the active layer respectively; forming a first electrode connecting to the first portion; and forming a second electrode connecting to the second portion.

Abstract translation: 本发明的一个实施例提供一种薄膜晶体管衬底的制造方法，包括：在第一衬底上依次形成栅电极，覆盖栅电极的栅极绝缘层，活性材料层和光敏材料层; 通过使用半色调掩模进行光刻处理，以形成位于栅电极之上并具有第一凹部和第二凹部的感光保护层; 通过使用光敏保护层作为掩模蚀刻活性物质层以形成活性层; 在所述第一凹部和所述第二凹部的底部移除所述光敏保护层的一部分，以分别暴露所述活性层的第一部分和第二部分; 形成连接到所述第一部分的第一电极; 以及形成连接到第二部分的第二电极。

公开(公告)号：US20130328043A1

公开(公告)日：2013-12-12

申请号：US13910974

申请日：2013-06-05

Applicant: Innolux Corporation

Inventor： Kuan-Feng LEE

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L27/1288 ,  H01L29/78633

Abstract: An embodiment of the invention provides a thin film transistor substrate includes: a substrate; a plurality of transistors on the substrate, wherein each of the transistors includes: a light-blocking layer on the substrate; an active layer on the light-blocking layer; a gate insulating layer on the substrate and covering the active layer; a gate electrode on the gate insulating layer and over the active layer; a source electrode on the substrate and electrically connected to the active layer; and a drain electrode on the substrate and electrically connected to the active layer.

Abstract translation: 本发明的实施例提供了一种薄膜晶体管衬底，包括：衬底; 在所述基板上的多个晶体管，其中所述晶体管中的每一个包括：所述基板上的阻光层; 在阻光层上的有源层; 栅极绝缘层，覆盖有源层; 栅极电极在栅极绝缘层上并在有源层上方; 基极上的源电极并与有源层电连接; 以及在所述基板上的漏电极，并且电连接到所述有源层。

公开(公告)号：US20250151409A1

公开(公告)日：2025-05-08

申请号：US19018181

申请日：2025-01-13

Applicant: INNOLUX CORPORATION

Inventor： Kuan-Feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H10D86/60 ,  H01L21/02 ,  H10D30/01 ,  H10D30/67 ,  H10D62/80 ,  H10D64/68 ,  H10D86/01 ,  H10D86/40 ,  H10D99/00

Abstract: An electronic device is provided. The electronic device includes a substrate, a first active layer, a second active layer, a first gate electrode, a first insulator, a second gate electrode, a second insulator, a first electrode electrically connected to the second active layer, and a second electrode. The first active layer is different from the second active layer in material. The first insulator is disposed between the first active layer and the first gate electrode. The second insulator is disposed between the second active layer and the second gate electrode. The second gate electrode is disposed between the first electrode and the second active layer. The second electrode is overlapped with at least part of the second active layer. The second electrode and the first gate electrode are the same in material.

公开(公告)号：US20250149408A1

公开(公告)日：2025-05-08

申请号：US19014408

申请日：2025-01-09

Applicant: InnoLux Corporation

Inventor： Jui-Jen YUEH ,  Kuan-Feng LEE ,  Yuan-Lin WU

IPC: H01L23/48 ,  H01L23/532 ,  H10D64/27

Abstract: An electronic device includes: a substrate including a through hole; a connecting element disposed in the through hole; a first insulating layer disposed on the substrate and including a first via; a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via; a second conductive element disposed under the substrate and electrically connected to the connecting element; and a semiconductor disposed between the substrate and the first insulating layer.

公开(公告)号：US20250046762A1

公开(公告)日：2025-02-06

申请号：US18919634

申请日：2024-10-18

Applicant: InnoLux Corporation

Inventor： Yuan-Lin WU ,  Kuan-Feng LEE ,  Wei-Cheng CHU

IPC: H01L25/075 ,  H01L33/20 ,  H01L33/58 ,  H01L33/62

Abstract: A display device is provided. The display device includes a substrate having a surface including a display area; a plurality of light-emitting diodes disposed on the display area of the substrate, wherein the light-emitting diode includes an electrode; and a plurality of bonding pads disposed on the substrate; a conductive element disposed between one of the plurality of bonding pads and the electrode of the at least one of the plurality of light-emitting diodes; and a first matrix element disposed on the substrate, wherein in a cross-sectional view, the first matrix element is disposed between adjacent two of the plurality of light-emitting diodes, and the electrode has a sidewall profile and at least a part of the sidewall profile of the electrode is in a shape of a curve.

公开(公告)号：US20240402528A1

公开(公告)日：2024-12-05

申请号：US18797939

申请日：2024-08-08

Applicant: InnoLux Corporation

Inventor： Yu-Chia HUANG ,  Yuan-Lin WU ,  Chandra LIUS ,  Kuan-Feng LEE ,  Tsung-Han TSAI

IPC: G02F1/1333 ,  G02F1/1337 ,  G02F1/1362

Abstract: An electronic device is provided. The electronic device includes a first substrate, a second substrate, a first transistor, a second transistor, a passivation layer, a conductive through hole, an electrode, and a shielding layer. The second substrate overlaps the first substrate. The first transistor is disposed on the first substrate. The second transistor is disposed on the second substrate. The passivation layer is disposed between the first substrate and the second substrate. The conductive through hole penetrates the passivation layer. The electrode is disposed between the first substrate and the second substrate and electrically connected to the first transistor through the conductive through hole. The shielding layer is disposed between the first transistor and the second transistor and overlaps the conductive through hole.

公开(公告)号：US20240361859A1

公开(公告)日：2024-10-31

申请号：US18767302

申请日：2024-07-09

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE ,  Yuan-Lin WU ,  Yu-Hsien WU

IPC: G06F3/041 ,  G06F3/044 ,  H01L25/075 ,  H05K1/18 ,  H10K59/40

CPC classification number: G06F3/0416 ,  G06F3/0412 ,  G06F3/044 ,  H01L25/075 ,  H05K1/189 ,  H10K59/40

Abstract: An electronic device is provided. The electronic device includes a substrate, a metal layer, a plurality of diodes, a first transistor, and a second transistor. The metal layer is overlapped with the substrate and includes a plurality of holes. The diodes are disposed on the substrate. The first transistor and the second transistor are disposed on the substrate and electrically connected to one of the diodes, the gate electrodes of the first transistor and the second transistor overlap a same semiconductor, and the one of the diodes overlaps the first transistor and doesn't overlap the second transistor.

公开(公告)号：US20240349537A1

公开(公告)日：2024-10-17

申请号：US18756149

申请日：2024-06-27

Applicant: InnoLux Corporation

Inventor： Kuan-Feng LEE

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131 ,  H10K59/40

CPC classification number: H10K59/1213 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H10K59/131 ,  H01L27/1255 ,  H01L29/78675 ,  H01L29/7869 ,  H01L2224/16225 ,  H10K59/40

Abstract: An array substrate structure is provided, which includes a substrate with a first surface and a second surface opposite to the first surface. A first TFT is on the first surface of the substrate, and a second TFT is on the second surface of the substrate. A through via passes through the substrate, and the first TFT is electrically connected to the second TFT through the through via.