Abstract:
A method for making a carbon nanotube structure is introduced. The method includes the following steps. A carbon nanotube precursor including a number of carbon nanotubes is provided. The carbon nanotube precursor is placed in a chamber with low oxygen environment. The carbon nanotube precursor is heated in the chamber.
Abstract:
The disclosure discloses a method for communication based on pseudo-contact information, which including: when a call is received, acquiring contact information of a calling party, and encrypting the contact information by using a preset encryption algorithm to acquire pseudo-contact information; when the pseudo-contact information does not match locally stored pseudo-contact information, displaying real contact information of the calling party, wherein the locally stored pseudo-contact information represents the pseudo-contact information generated by encrypting the contact information to be stored according to the preset encryption algorithm and locally stored; and when the pseudo-contact information matches the locally stored pseudo-contact information, displaying a substituted contact information generated by substituting a plurality of bits of the real contact information of the calling party with an identifier. The disclosure further discloses another method for communication based on pseudo-contact information and an apparatus for communication based on pseudo-contact information. The disclosure can solve the problems of higher operation complexity and lower safety performance of the method for protecting contact information stored on a terminal mentioned in the related art.
Abstract:
A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.
Abstract:
Rather than have a unique code set per TV product, a common code base is provided to service multiple products and even multiple product lines. Embedded systems can be upgraded through a network connection. The software architecture provides a flexible approach to supporting multiple product offerings through a plug-in modular middle-ware and to providing standardized hardware acceleration for both 2D and 3D graphics. The plug-in capability provides for feature additions and upgrades after sale.
Abstract:
A semiconductor device has a first semiconductor die containing a low pass filter and baluns. The first semiconductor die has a high resistivity substrate. A second semiconductor die including a bandpass filter is mounted to the first semiconductor die. The second semiconductor die has a gallium arsenide substrate. A third semiconductor die including an RF switch is mounted to the first semiconductor die. A fourth semiconductor die includes an RF transceiver. The first, second, and third semiconductor die are mounted to the fourth semiconductor die. The first, second, third, and fourth semiconductor die are mounted to a substrate. An encapsulant is deposited over the first, second, third, and fourth semiconductor die and substrate. A plurality of bond wires is formed between the second semiconductor die and first semiconductor die, and between the third semiconductor die and first semiconductor die, and between the first semiconductor die and substrate.
Abstract:
A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.
Abstract:
A dispersion compensation method and a dispersion compensation device in an optical communication system are provided. The method mainly includes the following steps. A dispersion compensation value transmitted through a working path at a second wavelength is received through a non-working path at a first wavelength in an optical communication system. The non-working path at the first wavelength and the working path at the second wavelength use the same service channel. Dispersion in the non-working path at the first wavelength is compensated according to the dispersion compensation value. Therefore, no matter the working path is a main path or a backup path, the dispersion compensation value on the non-working path can be accurately regulated in time, such that the dispersion of the working path reaches an optimal status each time after the protection switching occurs to the service, thereby ensuring the fast switching of the service.
Abstract:
A semiconductor device has an RF balun formed over a substrate. The RF balun includes a first conductive trace wound to exhibit inductive properties with a first end coupled to a first terminal of the semiconductor device and second end coupled to a second terminal of the semiconductor device. A first capacitor is coupled between the first and second ends of the first conductive trace. A second conductive trace is wound to exhibit inductive properties with a first end coupled to a third terminal of the semiconductor device and second end coupled to a fourth terminal of the semiconductor device. The first conductive trace is formed completely within the second conductive trace. The first conductive trace and second conductive trace can have an oval, circular, or polygonal shape separated by 50 micrometers. A second capacitor is coupled between the first and second ends of the second conductive trace.
Abstract:
An apparatus for processing a recording medium with embedded information comprises: a passage mechanism including a first passage, a loop passage and recording medium conveying rollers, wherein a first opening and a second opening of the loop passage are connected to the tail end of the first passage; a first guide mechanism configured to selectively communicate the first passage with the first opening or the second opening of the loop passage; and a processing device including a magnetic head and a print head which are arranged in the first passage, wherein the magnetic head is arranged at a side of a recording medium inlet/outlet port which is adjacent to a leading end of the first passage. A method for processing the recording medium with embedded information is also disclosed. According to the apparatus and method for processing the recording medium mentioned above, the recording medium can be turned over automatically during moving through the loop passage, so that the printing on both sides of the recording medium can be realized by one single print head, and thus a comprehensive process on the recording medium with embedded information is realized, and the cost of the apparatus is reduced.
Abstract:
The present invention relates to a method for making a thermoacoustic device. The method includes the following steps. A substrate with a surface is provided. A plurality of microspaces is formed on the surface of the substrate. A sacrifice layer is fabricated to fill the microspaces. A metal film is deposited on the sacrifice layer, and the sacrifice layer is removed. A signal input device is provided to electrically connect with the metal film.