公开(公告)号：US12249399B2

公开(公告)日：2025-03-11

申请号：US18680395

申请日：2024-05-31

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C11/4063 ,  G11C29/02 ,  G11C5/02 ,  G11C5/04 ,  G11C7/18 ,  G11C11/4097

Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.

公开(公告)号：US20250037746A1

公开(公告)日：2025-01-30

申请号：US18680395

申请日：2024-05-31

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C7/22 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C7/18 ,  G11C11/4063 ,  G11C11/4097 ,  G11C29/02

Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.

公开(公告)号：US12147367B2

公开(公告)日：2024-11-19

申请号：US18355660

申请日：2023-07-20

Applicant: Rambus Inc.

Inventor： Amir Amirkhany ,  Suresh Rajan ,  Ravindranath Kollipara ,  Ian Shaeffer ,  David A. Secker

IPC: G06F13/40 ,  G06F12/00 ,  G06F13/00 ,  G06F13/16

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

公开(公告)号：US12142348B2

公开(公告)日：2024-11-12

申请号：US18460413

申请日：2023-09-01

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C8/18 ,  H01L23/00 ,  H01L25/065

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US12002540B2

公开(公告)日：2024-06-04

申请号：US18214466

申请日：2023-06-26

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C7/22 ,  G11C11/4063 ,  G11C29/02 ,  G11C5/02 ,  G11C5/04 ,  G11C7/18 ,  G11C11/4097

CPC classification number: G11C7/22 ,  G11C5/063 ,  G11C11/4063 ,  G11C29/02 ,  G11C29/022 ,  G11C29/025 ,  G11C29/028 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C7/18 ,  G11C11/4097

Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; and a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal. A third register field may store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal.

公开(公告)号：US11928020B2

公开(公告)日：2024-03-12

申请号：US18095341

申请日：2023-01-10

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Craig E. Hampel

IPC: G06F11/00 ,  G06F11/07 ,  G06F11/10 ,  G06F11/16 ,  H03M13/09

CPC classification number: G06F11/1004 ,  G06F11/0703 ,  G06F11/073 ,  G06F11/1679 ,  H03M13/09

Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation.

公开(公告)号：US11783879B2

公开(公告)日：2023-10-10

申请号：US17531151

申请日：2021-11-19

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C8/12 ,  G11C5/06 ,  G11C5/02 ,  G11C8/18 ,  H01L25/065 ,  G11C5/04 ,  G11C7/10 ,  H01L23/00

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/49 ,  H01L25/0657 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/15311 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2224/48095 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/49171 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/49171 ,  H01L2224/48471 ,  H01L2924/00 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

公开(公告)号：US11727982B2

公开(公告)日：2023-08-15

申请号：US17717632

申请日：2022-04-11

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Ely Tsern ,  Craig Hampel

IPC: G11C11/15 ,  G11C11/4093 ,  G06F13/16 ,  G06F13/40 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C7/10 ,  G11C7/22 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L25/065 ,  H01L25/10 ,  H01L23/00 ,  H01L25/18

CPC classification number: G11C11/4093 ,  G06F13/16 ,  G06F13/4027 ,  G06F13/4068 ,  G11C5/025 ,  G11C5/04 ,  G11C5/06 ,  G11C7/1006 ,  G11C7/222 ,  G11C11/4076 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096 ,  H01L25/0652 ,  H01L25/105 ,  G11C7/22 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/73265 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/14 ,  H01L2924/00

Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

公开(公告)号：US11651823B2

公开(公告)日：2023-05-16

申请号：US16953182

申请日：2020-11-19

Applicant: Rambus Inc.

Inventor： Brent S. Haukness ,  Ian Shaeffer ,  Gary Bela Bronner

IPC: G11C16/10 ,  G06F3/06

CPC classification number: G11C16/10 ,  G06F3/0611 ,  G06F3/0659 ,  G06F3/0688 ,  G06F2212/7204

Abstract: A memory system includes an array of non-volatile memory cells and a memory controller having a first port to receive a program command that addresses a number of the memory cells for a programming operation, having a second port coupled to the memory array via a command pipeline, and configured to create a plurality of fractional program commands in response to the program command. Execution of each fractional program command applies a single program pulse to the addressed memory cells to incrementally program the addressed memory cells with program data, where the duration of the program pulse associated with each fractional program command is a selected fraction of the total programming time typically required to program the memory cells.

公开(公告)号：US20230100348A1

公开(公告)日：2023-03-30

申请号：US17945616

申请日：2022-09-15

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Frederick A. Ware

IPC: G06F12/14 ,  G06F3/06 ,  G06F13/16 ,  G06F12/02

Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.