公开(公告)号：US20170358683A1

公开(公告)日：2017-12-14

申请号：US15671199

申请日：2017-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/11 ,  H01L49/02 ,  G06F15/76 ,  H01L29/423 ,  H01L29/24 ,  H01L29/417 ,  H01L27/108

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

公开(公告)号：US20170040459A1

公开(公告)日：2017-02-09

申请号：US15296432

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

公开(公告)号：US20160118418A1

公开(公告)日：2016-04-28

申请号：US14989927

申请日：2016-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kosei NODA ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Hikaru HARADA

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/7869 ,  G06F15/76 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/1112 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/60 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78696

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

Abstract translation: 目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。 提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。 包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。 此外，可以降低功耗。 由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

公开(公告)号：US20150326194A1

公开(公告)日：2015-11-12

申请号：US14718158

申请日：2015-05-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Roh YAMAMOTO ,  Kazunori WATANABE

IPC: H03F3/45

CPC classification number: H03F3/45076 ,  G06G7/186 ,  H03F2203/45116 ,  H03F2203/45332 ,  H03K17/002

Abstract: A semiconductor device including an integrator circuit, in which electric discharge from a capacitor can be reduced to shorten time required for charging the capacitor in the case where supply of power supply voltage is stopped and restarted, and a method for driving the semiconductor device are provided. One embodiment has a structure in which a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit. Further, in one embodiment of the present invention, a transistor with small off-state current is electrically connected in series to a capacitor in an integrator circuit; the transistor is on in a period during which power supply voltage is supplied; and the transistor is off in a period during which supply of the power supply voltage is stopped.

Abstract translation: 一种包括积分电路的半导体器件，其中可以减少从电容器的放电以缩短在停止并重新启动电源电压的情况下为电容器充电所需的时间，以及驱动该半导体器件的方法 。 一个实施例具有其中具有小截止电流的晶体管与积分电路中的电容器串联电连接的结构。 此外，在本发明的一个实施例中，具有小截止电流的晶体管与积分电路中的电容器串联电连接; 在提供电源电压的期间，晶体管导通; 在停止供电电压的期间，晶体管截止。

公开(公告)号：US20130056763A1

公开(公告)日：2013-03-07

申请号：US13668426

申请日：2012-11-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Kazunori WATANABE

IPC: H01L33/08 ,  H01L29/94

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/42392 ,  H01L29/7391 ,  H01L29/78642 ,  H01L29/7869 ,  H03K17/687 ,  H03K17/73

Abstract: An object is to provide a semiconductor device that can realize a function of a thyristor without complication of the process. A semiconductor device including a memory circuit that stores a predetermined potential by reset operation and initialization operation is provided with a circuit that rewrite data in the memory circuit in accordance with supply of a trigger signal. The semiconductor device has a structure in which a current flowing through the semiconductor device is supplied to a load by rewriting data in the memory circuit, and thus can function as a thyristor.

Abstract translation: 目的在于提供一种可以实现晶闸管功能的半导体器件，而不会使工艺复杂化。 包括通过复位操作和初始化操作来存储预定电位的存储电路的半导体器件设置有根据触发信号的提供重写存储电路中的数据的电路。 半导体器件具有这样的结构，其中流过半导体器件的电流通过重写存储器电路中的数据而被提供给负载，并且因此可以用作晶闸管。

公开(公告)号：US20250157995A1

公开(公告)日：2025-05-15

申请号：US19025166

申请日：2025-01-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazunori WATANABE ,  Koji KUSUNOKI ,  Taiki NONAKA ,  Hiroki ADACHI ,  Koichi TAKESHIMA

IPC: H01L25/075 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60 ,  H10D87/00 ,  H10H20/857

Abstract: A display device with high display quality and low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel, and then the light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. One of a source and a drain of the first transistor is electrically connected to the first light-emitting diode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the second light-emitting diode through the third conductive layer. The first conductive layer supplied with a constant potential is electrically connected to the other electrodes of the first and second light-emitting diodes through the fourth conductive layer.

公开(公告)号：US20250155930A1

公开(公告)日：2025-05-15

申请号：US19021485

申请日：2025-01-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji KUSUNOKI ,  Hiroyuki MIYAKE ,  Kazunori WATANABE

IPC: G06F1/16 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F3/0488 ,  G06F15/02 ,  H10K59/40 ,  H10K77/10

Abstract: To increase the detection sensitivity of a touch panel, provide a thin touch panel, provide a foldable touch panel, or provide a lightweight touch panel. A display element and a capacitor forming a touch sensor are provided between a pair of substrates. Preferably, a pair of conductive layers forming the capacitor each have an opening. The opening and the display element are provided to overlap each other. A light-blocking layer is provided between a substrate on the display surface side and the pair of conductive layers forming the capacitor.

公开(公告)号：US20250077012A1

公开(公告)日：2025-03-06

申请号：US18950355

申请日：2024-11-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Taisuke KAMADA ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Susumu KAWASHIMA ,  Kensuke YOSHIZUMI

IPC: G06F3/041 ,  G06F3/042 ,  G06V10/147 ,  G06V40/13

Abstract: A display device featuring a touch detection and a fingerprint imaging functions is provided. A display device includes a light-emitting element and a light-receiving element. The light-emitting element includes a first pixel electrode, a light-emitting layer, and a common electrode, and the light-receiving element includes a second pixel electrode, an active layer, and the common electrode. The first pixel electrode and the second pixel electrode are provided on the same plane. The common electrode overlaps with the first pixel electrode with the light-emitting layer therebetween, and overlaps with the second pixel electrode with the active layer therebetween. A first conductive layer, a second conductive layer, and an insulating layer are provided above the common electrode. The insulating layer is provided above the first conductive layer, and the second conductive layer is provided above the insulating layer. The light-receiving element has a function of receiving light emitted from the light-emitting element.

公开(公告)号：US20250008804A1

公开(公告)日：2025-01-02

申请号：US18883120

申请日：2024-09-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Taisuke KAMADA ,  Ryo HATSUMI ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Susumu KAWASHIMA

IPC: H10K59/35 ,  H10K50/86 ,  H10K59/65 ,  H10K102/00

Abstract: The resolution of a display apparatus having a light detection function is increased. The display apparatus includes a light-emitting device and a light-emitting and light-receiving device. The light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode; the light-emitting and light-receiving device includes a second pixel electrode, a second light-emitting layer, an active layer, and the common electrode; the active layer includes an organic compound; the first light-emitting layer is positioned between the first pixel electrode and the common electrode; the second light-emitting layer and the active layer are each positioned between the second pixel electrode and the common electrode; the light-emitting device has a function of emitting light of a first color; and the light-emitting and light-receiving device has a function of emitting light of a second color and a function of receiving light of the first color. The light-emitting and light-receiving device functions as both a light-emitting device and a light-receiving device, whereby a pixel can have a light-receiving function without an increase in the number of subpixels included in the pixel. Furthermore, the pixel can be provided with a light-receiving function without a reduction in the resolution of the display apparatus or a reduction in the aperture ratio of each subpixel.

公开(公告)号：US20240413130A1

公开(公告)日：2024-12-12

申请号：US18679945

申请日：2024-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazunori WATANABE ,  Koji KUSUNOKI ,  Taiki NONAKA ,  Hiroki ADACHI ,  Koichi TAKESHIMA

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

Abstract: A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer.
10 One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.