Abstract:
A latency control circuit and method thereof and auto-precharge control circuit and method thereof are provided. The example latency control circuit may include a master unit activating at least one master signal based on a reference signal and an internal clock signal and a plurality of slave units receiving the at least one master signal, each of the plurality of slave units receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals. The example method of latency control may include receiving at least one master signal, the received at least one master signal activated based on a reference signal and an internal clock signal and receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals and latency information. The example auto-precharge control circuit may include a precharge command delay unit generating a plurality of first precharge command delay signals in response to an internal clock signal and a write auto-precharge command signal, at least one bank address delay unit outputting a delayed bank address signal and a precharge main signal generator outputting a precharge main signal to banks based on the delayed bank address signal. The method of performing a precharging operation with the auto-precharge control circuit may include delaying a bank address signal based on a minimum time interval between executed memory commands and outputting a precharge main signal to one or more memory banks based on the delayed bank address signal.
Abstract:
A semiconductor device, a parallel interface system and methods thereof are provided. The example semiconductor device may include a reference clock transmitting block generating a reference clock signal, a plurality of first transceiver blocks, each of the plurality of first transceiver blocks transmitting at least one parallel data bit signal based on one of a plurality of phase-controlled transmitting sampling clock signals and a per-pin deskew block controlling a phase of a transmitting sampling clock signal to generate the phase-controlled sampling clock signals for the respective plurality of transceiver blocks, the per-pin deskew block controlling the phase of each phase-controlled transmitting sampling clock signal based on a phase skew between a given training data bit signal, among a plurality of training data bit signals, corresponding to a given first transceiver block and the reference clock signal in a first operation mode, and based on phase skew information relating to a phase skew between a given parallel data bit signal of the at least one parallel data bit signal and the reference clock signal in a second operation mode. An example method may include reducing skew based on a comparison between a plurality of transmitted training data bit signals and a corresponding plurality of received training data bit signals in a first mode of operation and reducing skew based on received phase skew information relating to a phase skew difference between a reference signal and a parallel data bit signal in a second mode of operation.
Abstract:
A system including a plurality of transmission lines, a transmitter outputting respective signals to each of the plurality of transmission lines, a receiver receiving each of the plurality of signals via respective transmission lines, the receiver including a connection path connected to a termination voltage, a plurality of termination circuits distributed along the connection path, each termination circuit receiving a unique termination voltage from the connection path, receiving a respective signal and outputting a terminated input signal, a reference voltage generator including multiple reference voltage generator units connected to a common voltage, each reference voltage generator unit uniquely receiving at least one unique termination voltage and outputting a reference voltage, and a plurality of data input buffers receiving respective signals and an appropriate reference voltage of the multiple reference voltages output from the reference voltage generator.
Abstract:
An antifuse circuit includes a protection circuit. The antifuse circuit receives a program voltage using a non-connection (NC) pin or ball of a semiconductor device. The protection circuit prevents an unintended voltage lower than the program voltage from being applied to the antifuse circuit.
Abstract:
Provided are a circuit and method for sampling a valid command using a valid address window extended for a high-speed operation in a double pumped address scheme memory device. A method for extending the valid address window includes: inputting a valid command signal and a first address signal at the first cycle of a clock signal; inputting a second address signal at the second cycle of the clock signal; generating a decoded command signal and extended first and second internal address signals respectively in response to the command signal and the address signals; and latching and decoding the extended first and second internal address signals in response to the decoded command signal.
Abstract:
A line driver circuit for stabilizing a signal that is output through a transmission line, wherein the line driver circuit receives a first signal having a first swing width corresponding to a difference between a first voltage and a second voltage, creates a second signal having a second swing width less than the first swing width, and outputs the second signal through a transmission line. The line driver circuit includes: a pull-up circuit that pulls up the second signal to a high level; a pull-down circuit that is connected to the pull-up circuit and pulls down the second signal to a low level; and an initializing circuit that is connected to a node of the transmission line, outputs a signal having a voltage of the low level or the high level to the node of the transmission line, and initializes the voltage at the node of the transmission line to the low level or the high level.
Abstract:
A latency control circuit and method thereof and auto-precharge control circuit and method thereof are provided. The example latency control circuit may include a master unit activating at least one master signal based on a reference signal and an internal clock signal and a plurality of slave units receiving the at least one master signal, each of the plurality of slave units receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals. The example method of latency control may include receiving at least one master signal, the received at least one master signal activated based on a reference signal and an internal clock signal and receiving a plurality of signals and outputting an output signal based at least in part upon one of the received plurality of signals and latency information. The example auto-precharge control circuit may include a precharge command delay unit generating a plurality of first precharge command delay signals in response to an internal clock signal and a write auto-precharge command signal, at least one bank address delay unit outputting a delayed bank address signal and a precharge main signal generator outputting a precharge main signal to banks based on the delayed bank address signal. The method of performing a precharging operation with the auto-precharge control circuit may include delaying a bank address signal based on a minimum time interval between executed memory commands and outputting a precharge main signal to one or more memory banks based on the delayed bank address signal.
Abstract:
A semiconductor memory device includes a serial to parallel converter configured to generate parallel data at a parallel data rate in response to first serial data at first serial data rate in a first mode and configured to generate the parallel data at the parallel data rate in response to a second serial data at second serial data rate in a second mode, wherein the second serial data rate is less than the first serial data rate, and a data write circuit configured to provide the parallel data to a memory cell array.
Abstract:
Semiconductor devices, a system including said semiconductor devices and methods thereof are provided. An example semiconductor device may receive data scheduled for transmission, scramble an order of bits within the received data, the scrambled order arranged in accordance with a given pseudo-random sequence. The received data may be balanced such that a difference between a first number of the bits within the received data equal to a first logic level and a second number of bits within the received data equal to a second logic level is below a threshold. The balanced and scrambled received data may then be transmitted. The example semiconductor device may perform the scrambling and balancing operations in any order. Likewise, on a receiving end, another semiconductor device may decode the original data by unscrambling and unbalancing the transmitted data. The unscrambling and unbalancing operations may be performed in an order based upon the order in which the transmitted data is scrambled and balanced.
Abstract:
A swing limiter comprises a logic circuit including a first pull-up transistor and a first pull-down transistor connected between first and second nodes and which generate an output signal; a second pull-up transistor connected between a first power voltage and the first node; a second pull-down transistor connected between the second node and a second power voltage; a first control voltage generator connected between a high voltage which is higher than the first power voltage and a first reference voltage which is lower than the high voltage; and a second control voltage generator connected between a low voltage which is lower than the second power voltage and a second reference voltage which is higher than the low voltage.