公开(公告)号：US06324201B1

公开(公告)日：2001-11-27

申请号：US09200060

申请日：1998-11-25

Applicant: Masaki Ohya ,  Kenji Endo

Inventor： Masaki Ohya ,  Kenji Endo

IPC: H01S520

CPC classification number: H01S5/2231 ,  H01S5/3201 ,  H01S2301/173

Abstract: A light emitting semiconductor element comprises a first additive layer which is added into a cladding layer or a middle layer. The first additive layer has a lattice constant which is different from a lattice constant of a semiconductor substrate. The light emitting semiconductor element is attached to a heat sink to form a laser device. The heat sink gives deformation to the light emitting semiconductor element. The first additive layer generates strain therein and suppresses influence of the deformation.

Abstract translation: 发光半导体元件包括添加到包覆层或中间层中的第一添加剂层。 第一添加层具有与半导体基板的晶格常数不同的晶格常数。 发光半导体元件附接到散热器以形成激光器件。 散热器使发光半导体元件变形。 第一添加剂层在其中产生应变并抑制变形的影响。

公开(公告)号：US5960018A

公开(公告)日：1999-09-28

申请号：US115689

申请日：1998-07-15

Applicant: Jack L. Jewell ,  Henryk Temkin

Inventor： Jack L. Jewell ,  Henryk Temkin

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06 ,  H01S3/08

CPC classification number: H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01S5/18311 ,  H01S5/2231 ,  H01S5/3235 ,  H01S5/34 ,  H01S5/343 ,  H01L33/105 ,  H01S2302/00 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

Abstract: Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

Abstract translation: 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US5926497A

公开(公告)日：1999-07-20

申请号：US816335

申请日：1997-03-13

Applicant: Jun Nitta ,  Yuichi Handa ,  Hidetoshi Nojiri

Inventor： Jun Nitta ,  Yuichi Handa ,  Hidetoshi Nojiri

IPC: G02B5/18 ,  B82Y20/00 ,  G02B5/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/32 ,  H04B10/40 ,  H04B10/50 ,  H04B10/508 ,  H04B10/532 ,  H04B10/572 ,  H04B10/58 ,  H04B10/60 ,  H01S3/19

CPC classification number: H01S5/0625 ,  H01S5/12 ,  H01S2301/14 ,  H01S5/06236 ,  H01S5/1228 ,  H01S5/3201 ,  H01S5/3216

Abstract: A diffraction grating includes first regions for mainly reflecting first polarized light and second regions for mainly reflecting second polarized light. The first regions and the second regions are alternately arranged in a light propagation direction in a variety of manners to appropriately set its polarization-mode dependency according to need. An optical semiconductor device includes a semiconductor substrate, a laser structure and that diffraction grating formed in the laser structure. The laser structure is a distributed feedback semiconductor laser structure or a distributed Bragg reflector semiconductor laser structure formed on the semiconductor substrate.

Abstract translation: 衍射光栅包括用于主要反射第一偏振光的第一区域和用于主要反射第二偏振光的第二区域。 第一区域和第二区域以各种方式沿光传播方向交替布置，以根据需要适当地设定其偏振模式依赖性。 光学半导体器件包括半导体衬底，激光结构和形成在激光结构中的衍射光栅。 激光器结构是分布式反馈半导体激光器结构或在半导体衬底上形成的分布式布拉格反射器半导体激光器结构。

公开(公告)号：US5878066A

公开(公告)日：1999-03-02

申请号：US904448

申请日：1997-07-31

Applicant: Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

Inventor： Natsuhiko Mizutani ,  Hajime Sakata ,  Yukio Furukawa

IPC: H01S5/062 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/20 ,  H01S5/227 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S5/50 ,  H01S3/10

CPC classification number: B82Y20/00 ,  H01S5/0625 ,  H01S5/12 ,  H01S2301/14 ,  H01S5/06203 ,  H01S5/06236 ,  H01S5/1057 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/124 ,  H01S5/204 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/3404 ,  H01S5/3413 ,  H01S5/34306 ,  H01S5/3434 ,  H01S5/5009 ,  H01S5/5018

Abstract: An optical semiconductor apparatus includes at least two semiconductor laser portions each having a light waveguide with an active layer and a distributed reflector, and a stimulating unit for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a modulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.

Abstract translation: 光学半导体装置包括至少两个半导体激光器部分，每个半导体激光器部分具有有源层的光波导和分布反射器，以及用于独立地激发光波导的有源层的刺激单元。 半导体激光器部分沿光传播方向串联布置。 光波导被构造成使得波导中的一个中的两个不同偏振模式的传播常数之间的差异不同于另一个波导中两种不同偏振模式的传播常数之差。 当将调制电流信号注入或向光半导体装置施加调制电压中的一个时，可以在两个不同偏振模式中的一个的布拉格波长在光之间彼此重合的状态之间切换振荡状态 波导和两个不同偏振模式中的另一个的布拉格波长在光波导之间彼此重合的状态。

公开(公告)号：US5805627A

公开(公告)日：1998-09-08

申请号：US546895

申请日：1995-10-23

Applicant: Shinichi Kubota ,  Haruhisa Soda

Inventor： Shinichi Kubota ,  Haruhisa Soda

IPC: H04B10/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H04B10/00 ,  H04B10/50 ,  H04B10/60 ,  H01S3/19 ,  H01S3/00

CPC classification number: H01S5/2231 ,  H01S5/204 ,  H01S5/2209 ,  H01S5/3201

Abstract: Embedded layers having a high resistance or an inverse conductivity with respect to a ridge structure are formed on either side of a ridge structure which is formed to correspond to an light emission region of a laser diode. The embedded layers confines a current in the ridge structure and moderates light-confinement performance in the ridge structure at an emitting end of the laser diode.

Abstract translation: 在与激光二极管的发光区域对应地形成的脊结构的任一侧上形成相对于脊结构具有高电阻或反向导电性的嵌入层。 嵌入层将电流限制在脊结构中，并缓和激光二极管发射端的脊结构中的光限制性能。

公开(公告)号：US5751753A

公开(公告)日：1998-05-12

申请号：US681336

申请日：1996-07-23

Applicant: Toru Uchida

Inventor： Toru Uchida

IPC: H01L33/00 ,  H01L33/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L31/0328

CPC classification number: H01L33/30 ,  B82Y20/00 ,  H01L33/0062 ,  H01S5/32 ,  H01S5/34 ,  H01S5/34313 ,  H01S2301/173 ,  H01S5/3201 ,  H01S5/3211 ,  H01S5/3403 ,  H01S5/34306

Abstract: A semiconductor laser having: a group III-V semiconductor substrate; a group III-V semiconductor clad layer disposed on the substrate with a lattice mismatch of 0.5 % or more; group III-V semiconductor light propagation layers disposed on the clad layer, including an active layer and light confining layers on both sides of the active layer, the light confining layers containing Al as the group III element; a group III-V semiconductor buffer layer disposed between the substrate and the clad layer, the buffer layer including a composition graded layer gradually changing the lattice constant, and having a cross hatched step on the surface thereof; and an intermediate layer of group III-V semiconductor disposed between the buffer layer and the clad layer, the intermediate layer containing phosphorous as the group V element. A semiconductor laser of 1 .mu.m band is provided whose substrate and clad layer are lattice mismatched and whose clad layer uses group III-V semiconductor having a wide forbidden band and containing Al as the group III element.

Abstract translation: 一种具有：III-V族半导体衬底的半导体激光器; 设置在所述基板上的晶格失配为0.5％以上的III-V族半导体包层; 设置在包层上的III-V族半导体光传播层，包括有源层和在有源层的两侧上的限光层，光限制层包含Al作为III族元素; 设置在所述基板和所述包层之间的III-V族半导体缓冲层，所述缓冲层包括逐渐改变晶格常数的组成分级层，并且在其表面上具有交叉阴影的步骤; 以及设置在缓冲层和包层之间的III-V族半导体的中间层，中间层含有磷作为V族元素。 提供了1μm的半导体激光器，其衬底和包层是晶格失配的，并且其包层使用具有宽禁带的III-V族半导体并且包含Al作为III族元素。

公开(公告)号：US5633516A

公开(公告)日：1997-05-27

申请号：US506193

申请日：1995-07-24

Applicant: Tomoyoshi Mishima ,  Katsuhiko Higuchi ,  Mitsuhiro Mori ,  Makoto Kudo ,  Chushiro Kusano

Inventor： Tomoyoshi Mishima ,  Katsuhiko Higuchi ,  Mitsuhiro Mori ,  Makoto Kudo ,  Chushiro Kusano

IPC: H01L21/20 ,  H01L21/338 ,  H01L29/205 ,  H01L29/778 ,  H01L29/812 ,  H01S5/223 ,  H01S5/32 ,  H01L31/0328

CPC classification number: H01L29/205 ,  H01L29/7783 ,  H01S5/223 ,  H01S5/3201

Abstract: A semiconductor device has a lattice-mismatched crystal structure including a semiconductor film formed on a substrate with an intervening buffer layer. The buffer layer has a plurality of layers, including first sublayers, or regions, in which an element that controls the lattice constant is provided in increasing mole fraction, and second sublayers, or regions, in which the lattice constant is maintained. The first sublayers and second sublayers are provided in alternating fashion. The resulting device has an increased electron mobility as compared with the prior art.

Abstract translation: 半导体器件具有晶格失配的晶体结构，其包括在具有中间缓冲层的衬底上形成的半导体膜。 缓冲层具有包括第一子层或多个区域的多个层，其中控制晶格常数的元素以增加的摩尔分数提供，以及维持晶格常数的第二子层或区域。 以交替方式提供第一子层和第二子层。 所得到的器件与现有技术相比具有增加的电子迁移率。

公开(公告)号：US5633514A

公开(公告)日：1997-05-27

申请号：US570376

申请日：1995-12-11

Applicant: Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

Inventor： Masashi Shiraishi ,  Satoshi Ito ,  Kazushi Nakano ,  Akira Ishibashi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Katsuhiro Akimoto ,  Tomonori Hino ,  Masakazu Ukita

IPC: H01L33/00 ,  H01L33/28 ,  H01S5/32 ,  H01S5/327

CPC classification number: H01L33/28 ,  H01L33/0087 ,  H01S5/327 ,  H01S5/3201

Abstract: The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).

Abstract translation: 半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4） 沉积在有源层（4）上的第二导电类型的第二包覆层（6）。 第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成， 作为S，Se，Te。 在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

公开(公告)号：US5569954A

公开(公告)日：1996-10-29

申请号：US302766

申请日：1994-09-13

Applicant: Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

Inventor： Masahiko Hata ,  Noboru Fukuhara ,  Hiroaki Takata ,  Katsumi Inui

IPC: H01L21/205 ,  H01L21/335 ,  H01S5/32 ,  H01S5/323 ,  H01L29/04

CPC classification number: H01L29/66462 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/323 ,  H01S2304/04 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/32308

Abstract: A semiconductor epitaxial substrate, characterized in that a crystal is formed by epitaxial growth on a gallium arsenide single crystal substrate whose crystallographic plane azimuth is slanted from that of one of {100} planes at an angle of not more than 1.degree., that at least part of the epitaxial crystal is an In.sub.x Ga.sub.(1-x) As crystal (wherein 0

Abstract translation: PCT No.PCT / JP94 / 00032 Sec。 371日期1994年9月13日 102（e）1994年9月13日PCT 1994年1月12日PCT PCT。 公开号WO94 / 16459 日期1994年7月21日一种半导体外延基板，其特征在于通过在砷化镓单晶基板上外延生长形成晶体，其晶体方位角以不大于1的角度从{100}面之一倾斜 DEG，外延晶体的至少一部分是In x Ga（1-x）As晶体（其中0

公开(公告)号：US5502739A

公开(公告)日：1996-03-26

申请号：US396506

申请日：1995-03-01

Applicant: Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Hideto Adachi ,  Satoshi Kamiyama ,  Masaya Mannou ,  Takeshi Uenoyama

Inventor： Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Hideto Adachi ,  Satoshi Kamiyama ,  Masaya Mannou ,  Takeshi Uenoyama

IPC: H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/3403 ,  H01S5/3409

Abstract: A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.

Abstract translation: 提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒。 多量子势垒包括阻挡层和彼此交替的阱层。 多量子势垒中的至少一个阻挡层和阱层的厚度，能带隙或杂质浓度随着与有源层的距离而变化，从而提供将从有源层溢出的载流子反射回到 活动层。