公开(公告)号：US11361951B2

公开(公告)日：2022-06-14

申请号：US17031327

申请日：2020-09-24

Applicant: KLA Corporation

Inventor： Derek Mackay

IPC: H01J43/30 ,  H01J43/08 ,  H01J43/18 ,  H01J43/12 ,  G06T5/00 ,  G01N21/95 ,  G01N21/88 ,  G06T5/50

Abstract: A photomultiplier tube (PMT) detector assembly includes a PMT and an analog PMT detector circuit. The PMT includes a photocathode configured to emit an initial set of photoelectrons in response to an absorption of photons. The PMT includes a dynode chain with a plurality of dynodes. The dynode chain is configured to receive the initial set of photoelectrons, generate at least one amplified set of photoelectrons, and direct the at least one amplified set of photoelectrons. The PMT includes an anode configured to receive the at least one amplified set of photoelectrons, with a digitized image being generated based on a measurement of the final amplified set of photoelectrons. The digitized image is corrected by applying an output of the signal measured by the analog PMT detector circuit to the digitized image.

公开(公告)号：US11201041B2

公开(公告)日：2021-12-14

申请号：US17158668

申请日：2021-01-26

Applicant: Baker Hughes Holdings LLC

Inventor： Kevin Scott McKinny ,  Casey Hale ,  Christopher Freeman ,  Jonas Burke ,  Matthew Steinhart ,  Matthew Mcpheeters

IPC: H01J43/08 ,  H01J43/28 ,  H01J43/22

Abstract: A photomultiplier includes a housing including a proximal end and a distal end, an optical window disposed at the proximal end of the housing, an end-wall plate disposed at the distal end of the housing, a feedthrough that penetrates through the end-wall plate, and a gas electron multiplier (GEM) board disposed between the optical window and the end-wall plate.

公开(公告)号：US10388495B2

公开(公告)日：2019-08-20

申请号：US16318858

申请日：2017-06-14

Applicant: Aktsionernoe Obshchestvo “KATOD”

Inventor： Iosif Isaakovich Gol'dberg ,  Aleksandr Vladimirovich Dolgikh ,  Vladimir Il'ich Loktionov

IPC: H01J40/06 ,  H01J43/08 ,  H01J31/50

Abstract: A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C.

公开(公告)号：US20160300701A1

公开(公告)日：2016-10-13

申请号：US15189871

申请日：2016-06-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  John Fielden

IPC: H01J40/06 ,  H01L31/103 ,  H01L31/0216 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.

Abstract translation: 用于检查包括检测器，光电倍增管或电子轰击图像传感器的样品的系统，其被定位成接收来自样品的光。 检测器包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极包括硅，并且在至少一个表面上还包括纯硼涂层。

公开(公告)号：US09460899B2

公开(公告)日：2016-10-04

申请号：US14841886

申请日：2015-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

IPC: H01J43/04 ,  H01J43/08 ,  H01J43/24 ,  H01J9/26

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

公开(公告)号：US08022351B2

公开(公告)日：2011-09-20

申请号：US12370066

申请日：2009-02-12

Applicant: Xinyu Zheng ,  Thomas J. Cunningham ,  Bedabrata Pain

Inventor： Xinyu Zheng ,  Thomas J. Cunningham ,  Bedabrata Pain

IPC: H01J43/04 ,  H01J43/08

CPC classification number: H01L31/107 ,  G01J1/42

Abstract: A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche.

Abstract translation: 描述了光电子器件的光电子器件和雪崩自熄工艺。 光电子器件包括纳米尺度半导体乘法区和包括耗尽区和去除区的纳米级掺杂半导体猝灭结构。 光电子器件可以用作单个光子检测器或单载波乘法器。 雪崩自熄过程允许乘法运动中的乘法区域中的电场减少，从而使雪崩骤冷。

公开(公告)号：US20080265769A1

公开(公告)日：2008-10-30

申请号：US11801771

申请日：2007-04-26

Applicant: Vincent Michael Contarino ,  Pavlo Molchanov

Inventor： Vincent Michael Contarino ,  Pavlo Molchanov

IPC: H01J43/08 ,  H01J43/04

CPC classification number: H01J43/28

Abstract: A large area hybrid photomultiplier tube that includes a photocathode for emitting photoelectrons in correspondence with incident light, a semiconductor device having an electron incident surface for receiving photoelectrons from the photocathode, and a cone shaped container. The container has a first opening and a second opening. The photocathode is disposed at the first opening, and the semiconductor device is disposed at the second opening.

Abstract translation: 一种大面积混合光电倍增管，其包括用于发射与入射光相对应的光电子的光电阴极，具有用于从光电阴极接收光电子的电子入射表面的半导体器件和锥形容器。 容器具有第一开口和第二开口。 光电阴极设置在第一开口处，并且半导体器件设置在第二开口处。

公开(公告)号：US5982094A

公开(公告)日：1999-11-09

申请号：US931459

申请日：1997-09-17

Applicant: Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Masami Yamada

Inventor： Minoru Niigaki ,  Toru Hirohata ,  Hirofumi Kan ,  Masami Yamada

IPC: H01J1/34 ,  H01J40/16 ,  H01J43/08 ,  H01J40/06

CPC classification number: H01J40/16 ,  H01J1/34 ,  H01J43/08 ,  H01J2201/3421 ,  H01J2231/50

Abstract: A photocathode includes a first layer of polycrystalline diamond or a material mainly composed of polycrystalline diamond. The first layer of polycrystalline diamond may be terminated with hydrogen, or oxygen, and a second layer of an alkali metal or compound of an alkali metal, may be provided on the first layer of polycrystalline diamond whose surface is terminated with hydrogen or oxygen. The photocathode can be use for both reflection and transmission electron tubes and can yield a quantum efficiency higher than that in a monocrystal diamond thin film.

Abstract translation: 光电阴极包括第一层多晶金刚石或主要由多晶金刚石构成的材料。 第一层多晶金刚石可以用氢或氧终止，并且第二层碱金属或碱金属化合物可以在其表面用氢或氧终止的第一多晶金刚石层上提供。 光电阴极可以用于反射和透射电子管，并且可以产生比单晶金刚石薄膜中的量子效率更高的量子效率。

公开(公告)号：US5917282A

公开(公告)日：1999-06-29

申请号：US847261

申请日：1997-05-01

Applicant: Motohiro Suyama ,  Yoshihiko Kawai ,  Suenori Kimura ,  Ken Hirano ,  Norio Asakura ,  Tetsuya Morita

Inventor： Motohiro Suyama ,  Yoshihiko Kawai ,  Suenori Kimura ,  Ken Hirano ,  Norio Asakura ,  Tetsuya Morita

IPC: G01J1/02 ,  G01J1/42 ,  H01J40/04 ,  H01J43/04 ,  H01J43/08 ,  H01J43/28

CPC classification number: H01J40/04 ,  H01L31/1075

Abstract: This invention relates to an electron tube which stabilizes the orbits of electrons accelerated and focused by an electron lens and has a structure for effectively suppressing noise generated due to discharge. This electron tube has, at two ends of an insulating container, a cathode electrode and an anode electrode which constitute the electron lens. Particularly, in the electron tube, one end of the cathode electrode and a photocathode are supported by a conductive member arranged at one end of the insulating container, and the cathode electrode is electrically connected to the photocathode. The cathode electrode partially extends to a stem along the inner wall of the insulating container and is tapered toward the stem so that the distal end portion of the cathode electrode is separated from the inner wall of the insulating container. Therefore, the electron tube realizes, regardless of the size of the insulating container, a structure for preventing the insulating container from being charged and suppressing discharge followed by light emission between the cathode electrode and the insulating container.

Abstract translation: 本发明涉及一种电子管，其使由电子透镜加速和聚焦的电子的轨道稳定，并且具有有效抑制由放电产生的噪声的结构。 该电子管在绝缘容器的两端具有构成电子透镜的阴极电极和阳极电极。 特别地，在电子管中，阴极电极的一端和光电阴极由布置在绝缘容器的一端的导电构件支撑，并且阴极电连接到光电阴极。 阴极电极沿着绝缘容器的内壁部分地延伸到主管，并且朝向杆逐渐变细，使得阴极电极的远端部分与绝缘容器的内壁分离。 因此，不管绝缘容器的尺寸如何，电子管实现了防止绝缘容器被充电的结构，并且抑制了在阴极电极和绝缘容器之间发光的放电。

公开(公告)号：US5633562A

公开(公告)日：1997-05-27

申请号：US318288

申请日：1994-10-05

Applicant: Kazuyoshi Okano ,  Takehiro Iida ,  Tetsuo Murata ,  Nobuharu Suzuki ,  Hiroaki Washiyama ,  Yasushi Watase

Inventor： Kazuyoshi Okano ,  Takehiro Iida ,  Tetsuo Murata ,  Nobuharu Suzuki ,  Hiroaki Washiyama ,  Yasushi Watase

IPC: H01J1/34 ,  H01J43/08

CPC classification number: H01J1/34

Abstract: This invention relates to an improvement of a reflection mode alkali photocathode which relies on controlling a deposition weight of antimony. The reflection mode alkali photocathode according to this invention includes a thin layer of antimony directly deposited on a base substrate and activated by alkali metals. The thin film of antimony is deposited in a thickness of below 100 .mu.g/cm.sup.2. This reflection mode photocathode is suitably usable in photomultipliers. As the base substrate, nickel, aluminium and stainless, etc. are used. As the alkali metals, cesium, potassium, sodium and rubidium are usable.

Abstract translation: 本发明涉及依赖于控制锑沉积重量的反射模式碱性光电阴极的改进。 根据本发明的反射模式碱性光电阴极包括直接沉积在基底上并由碱金属活化的锑薄层。 锑薄膜的沉积厚度低于100μg/ cm2。 该反射模式光电阴极适用于光电倍增管。 作为基底，使用镍，铝和不锈钢等。 作为碱金属，可以使用铯，钾，钠和铷。