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公开(公告)号：US20100230049A1
公开(公告)日：2010-09-16
申请号：US12722614
申请日：2010-03-12
Applicant: Oliver Ansell , Anthony Barrass , Paul Bennett , David Tossell
Inventor： Oliver Ansell , Anthony Barrass , Paul Bennett , David Tossell
IPC: C23F1/06
CPC classification number: H01L21/67253 , H01J37/32917 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/32981 , H01J37/3299
Abstract: Apparatus for chemically etching a workpiece includes a chamber for receiving a process gas and having a pumping port for extracting exhaust gases, and a workpiece support located in the chamber upstream of the pumping port. The chamber further includes a sub-chamber located upstream of the pumping port and downstream of the workpiece support, and the sub-chamber includes a window and an excitation source, adjacent the window, for creating a plasma in a sample of the exhaust gases to create an optical emission which can be monitored through the window.
Abstract translation: 用于化学蚀刻工件的设备包括用于接收处理气体并具有用于抽取废气的泵送端口的腔室和位于泵送端口上游的腔室中的工件支撑件。 腔室还包括位于泵送端口的上游并且在工件支撑件的下游的子室，并且子室包括与窗口相邻的窗口和激发源，用于在废气样本中产生等离子体 产生可通过窗口监测的光发射。
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公开(公告)号：US20110318502A1
公开(公告)日：2011-12-29
申请号：US12972602
申请日：2010-12-20
Applicant: Kathrine Giles , Andrew Price , Stephen Robert Burgess , Daniel Thoms Archard
Inventor： Kathrine Giles , Andrew Price , Stephen Robert Burgess , Daniel Thoms Archard
IPC: C23C16/40 , C23C16/56 , C23C16/505
CPC classification number: C23C16/402 , C23C16/509 , C23C16/56
Abstract: This invention relates to a method of depositing an inorganic SiO2 film at temperatures below 250° C. using plasma enhanced chemical vapour deposition (PECVD) in a chamber including supplying tetraethylorthosilicate (TEOS) and O2, or a source thereof, as precursors, with an O2/TEOS ratio of between 15:1 and 25:1.
Abstract translation: 本发明涉及一种在室温下使用等离子体增强化学气相沉积（PECVD）在低于250℃的温度下沉积无机SiO 2膜的方法，该方法包括：将原硅酸四乙酯（TEOS）和O 2或其源作为前体， O2 / TEOS比例在15：1和25：1之间。
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Patent Agency Ranking
公开(公告)号：US20100187097A1
公开(公告)日：2010-07-29
申请号：US12693464
申请日：2010-01-26
Applicant: Mark Ian Carruthers , Stephen Burgess , Anthony Wilby , Amit Rastogi , Paul Rich , Nicholas Rimmer
Inventor： Mark Ian Carruthers , Stephen Burgess , Anthony Wilby , Amit Rastogi , Paul Rich , Nicholas Rimmer
IPC: C23C14/34
CPC classification number: C23C14/165 , C23C14/046 , H01L21/2855 , H01L21/76877
Abstract: A method induces plasma vapour deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilising a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.
Abstract translation: 一种方法引起金属等离子体气相沉积到工件中的凹槽中。 该方法通过利用Ar和He和/或Ne的混合物作为溅射气体，以He和/或Ne：Ar的比例至少约为 10：1。
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公开(公告)号：US08968535B2
公开(公告)日：2015-03-03
申请号：US12967304
申请日：2010-12-14
Applicant: John MacNeil , Paul George Bennett
Inventor： John MacNeil , Paul George Bennett
CPC classification number: H01J27/022 , C23C14/3485 , C23C14/46 , H01J37/243 , H01J37/305 , H01J2237/004 , H01J2237/043 , H01J2237/08 , H01J2237/304
Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.
Abstract translation: 本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅格（13）和用于向栅格（13）提供通过电力以提取离子的电源。
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公开(公告)号：US20110268891A1
公开(公告)日：2011-11-03
申请号：US13054033
申请日：2009-07-13
Applicant: John MacNeil , Robert Jeffrey Bailey
Inventor： John MacNeil , Robert Jeffrey Bailey
IPC: C23C16/455 , C23C16/44 , C23C16/48 , C23C16/458 , C23C16/50
CPC classification number: C23C16/4412 , C23C16/45519 , C23C16/45551
Abstract: A gas delivery device is for use in low pressure Atomic Layer Deposition at a substrate location. The device includes a first generally elongate injector for supplying process gas to a process zone, a first exhaust zone circumjacent the process zone, and a further injector circumjacent the first exhaust gas for supplying purge or inert gas at an outlet surrounding the process zone having a wall for facing the location circumjacent the outlet to define at least a partial gas seal.
Abstract translation: 气体输送装置用于在基底位置处的低压原子层沉积。 该装置包括用于向处理区域提供处理气体的第一大体上细长的喷射器，在处理区域周围的第一排气区域，以及在第一废气周围的另外的喷射器，用于在处理区域周围的出口处供应吹扫或惰性气体， 用于面对围绕出口的位置以限定至少一个部分气体密封。
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公开(公告)号：US20110139605A1
公开(公告)日：2011-06-16
申请号：US12967304
申请日：2010-12-14
Applicant: John MACNEIL , Paul George BENNETT
Inventor： John MACNEIL , Paul George BENNETT
CPC classification number: H01J27/022 , C23C14/3485 , C23C14/46 , H01J37/243 , H01J37/305 , H01J2237/004 , H01J2237/043 , H01J2237/08 , H01J2237/304
Abstract: This invention relates an ion beam source (10) for use with a non-electrical conducting target (14) including a grid (13) for extracting ions and a power supply for supplying pass power to the grid (13) to extract the ions.
Abstract translation: 本发明涉及一种用于非导电靶（14）的离子束源（10），其包括用于提取离子的栅格（13）和用于向栅格（13）提供通过电力以提取离子的电源。
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公开(公告)号：US20100187202A1
公开(公告)日：2010-07-29
申请号：US12691785
申请日：2010-01-22
Applicant: David Andrew Tossell
Inventor： David Andrew Tossell
CPC classification number: H01L21/3065 , H01J37/32715 , H01L21/68735 , Y10T428/24479 , Y10T428/24521
Abstract: A method is for plasma etching elongate features in a generally planar workpiece of a type located in a chamber. The method includes etching a test workpiece in a flat configuration in the chamber, determining the respective angle of a longitudinal portion of the features relative to an axis passing orthogonally through the workpiece, and determining the curvature of the workpiece, which would have been required to reduce the angles, at least over a central portion of the workpiece, substantially to 0°. The method further includes processing a further workpiece of the same type whilst it is curved with the determined curvature.
Abstract translation: 一种方法是在位于腔室中的类型的大致平面的工件中等离子体蚀刻细长特征。 该方法包括在腔室中以平坦构型蚀刻测试工件，确定特征相对于通过工件正交通过的轴线的纵向部分的相应角度，并确定工件的曲率，这将是必需的 至少在工件的中心部分上将角度减小到0°。 该方法还包括在以所确定的曲率弯曲的同时处理相同类型的另外的工件。
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