公开(公告)号：US20250167013A1

公开(公告)日：2025-05-22

申请号：US19027387

申请日：2025-01-17

Applicant: ASM IP Holding B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US12296302B2

公开(公告)日：2025-05-13

申请号：US17136764

申请日：2020-12-29

Applicant: ASM IP Holding B.V.

Inventor： Ankit Kimtee ,  Rohan Rane

IPC: B01D61/14 ,  B01D46/52

Abstract: A filter system of a reactor system may comprise a filter vessel comprising an outer wall; a filter plate disposed in the filter vessel; and a filter disposed on the filter plate. The filter plate may comprise a first plate face and a second plate face with a plate body spanning therebetween; a first plate hole disposed through the plate body spanning between the first plate face and the second plate face; and/or a plate hole rim protruding from the first plate surface. The plate hole rim may be disposed at or proximate a plate hole edge defining the first plate hole, and/or at least partially surrounding the first plate hole. The first filter may be disposed on the first plate face, and the first filter may engage with the plate hole rim such that the plate hole rim positions the first filter in a desired position.

公开(公告)号：US12295163B2

公开(公告)日：2025-05-06

申请号：US17660389

申请日：2022-04-22

Applicant: ASM IP HOLDING B.V.

Inventor： Fu Tang ,  Eric James Shero ,  Gejian Zhao ,  Eric Jen Cheng Liu

IPC: H10D64/01 ,  H01L21/28

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

公开(公告)号：US20250137722A1

公开(公告)日：2025-05-01

申请号：US18928383

申请日：2024-10-28

Applicant: ASM IP Holding B.V.

Inventor： Felix Rabinovich ,  Terry Parde ,  Gary Urban Keppers ,  Amin Azimi ,  Alicia Almeda ,  Fauhmee Oudeif

IPC: F27B17/00 ,  B28B11/02 ,  B28D1/02 ,  B28D1/14 ,  B28D1/18

Abstract: A chamber body includes a ceramic weldment having an upper wall, a sidewall, and a lower wall. The upper wall is coupled to the sidewall by a sidewall-to-upper wall weld and includes an upper wall rib segment coupled to an upper wall plate by an upper wall rib segment weld. The sidewall is coupled to the lower wall by a sidewall-to-lower wall weld. The lower wall has a lower wall plate portion and a lower wall rib portion extending therefrom both formed from a singular ceramic workpiece using a subtractive manufacturing technique, the lower wall plate portion thereby defining a lower wall unwelded ribbed region including a plurality of lower wall rib segments defined by the lower wall rib portion of the lower wall. Chamber arrangements, semiconductor processing systems, and methods of making ceramic weldments for chamber bodies in chamber arrangement and semiconductor processing systems are also described.

公开(公告)号：US20250137121A1

公开(公告)日：2025-05-01

申请号：US18925862

申请日：2024-10-24

Applicant: ASM IP Holding B.V.

Inventor： Elisa K. Atosuo ,  Mikko Ritala

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for depositing metal phosphide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a metal halide precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form metal phosphide-containing material on the substrate.

公开(公告)号：US12288710B2

公开(公告)日：2025-04-29

申请号：US17551586

申请日：2021-12-15

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G. M. Oosterlaken ,  Aniket Nitin Patil ,  Nimit Kothari

IPC: H01L21/677

Abstract: The disclosure relates to a wafer processing apparatus for processing wafers with a rotatable table provided with a support constructed and arranged to support a removable holder for storing a plurality of wafers. A drive assembly may be provided to provide a rotary movement to the rotatable table around a vertical axis perpendicular to the table; and, a supply line may be constructed and arranged to supply utilities to the rotatable table. The drive assembly may be controlled and configured to create the rotary movement of the table in a clockwise and/or an anticlockwise direction to avoid breakage of the supply line.

公开(公告)号：US20250132149A1

公开(公告)日：2025-04-24

申请号：US18918187

申请日：2024-10-17

Applicant: ASM IP Holding B.V.

Inventor： Aditya Chauhan ,  Vivek Koladi Mootheri ,  Lorenzo Bottiglieri ,  Andrea IIIiberi ,  Michael Eugene Givens

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/455 ,  H01L29/786

Abstract: Methods for forming hydrogen barriers for, for example, channel layers in thin film transistors. The hydrogen barriers can comprise doped dielectrics such as magnesium-doped aluminum oxide. Further described are related structures and systems.

公开(公告)号：US20250125142A1

公开(公告)日：2025-04-17

申请号：US18991851

申请日：2024-12-23

Applicant: ASM IP Holding B.V.

Inventor： SangHeon Yong ,  Makoto Igarashi ,  JuHyuk Park ,  KiHun Kim ,  Jihye Yang ,  Sungha Choi ,  Jaewoo Jeong ,  Shinya Yoshimoto

IPC: H01L21/02

Abstract: Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a Vacuum UV radiation. The Vacuum UV radiation may be applied in a pulsed mode.

公开(公告)号：US12276023B2

公开(公告)日：2025-04-15

申请号：US16042791

申请日：2018-07-23

Applicant: ASM IP Holding B.V.

Inventor： Melvin Verbaas ,  Jereld Lee Winkler ,  John Kevin Shugrue ,  Carl Louis White

IPC: C23C16/455

Abstract: A showerhead assembly for distributing a gas within a reaction chamber is disclosed. The showerhead assembly may comprise: a chamber formed within the showerhead assembly and a gas distribution assembly adjacent to the chamber, wherein the gas distribution assembly comprises: a first gas distribution plate comprising a top surface and a bottom surface; and a second gas distribution plate comprising a top surface and a bottom surface, the second gas distribution plate being disposed over the top surface of the first gas distribution plate. The gas distribution assembly may further comprise: one or more heating structures disposed between the first gas distribution plate and the second gas distribution plate; and a plurality of apertures extending from the bottom surface of the first distribution plate to the top surface of the second gas distribution plate. Methods for controlling the temperature uniformity of a showerhead assembly utilized for distribution gas with a reaction chamber are also disclosed.

公开(公告)号：US20250112068A1

公开(公告)日：2025-04-03

申请号：US18904907

申请日：2024-10-02

Applicant: ASM IP Holding B.V.

Inventor： Klaas Boonstra ,  Theodorus G.M. Oosterlaken ,  Bram van den Brink ,  Anne Geertruid Maria Spruit

IPC: H01L21/673 ,  C23C16/458

Abstract: A wafer boat system comprising: a carrier extending along a carrier axis and comprising a first end member at a first axial end of the carrier, a second end member at a second axial end of the carrier, and a shell connecting the first end member with the second end member, wherein at least three circumferentially spaced apart axial series of ring support slots are provided to the shell, the ring support slots defining axially spaced apart holder ring positions; and a plurality of holder rings each engageable with the ring support slots to position the holder ring in the carrier at one of the holder ring positions, wherein the holder ring is configured to support a wafer in the carrier, wherein the shell circumferentially interconnects the axial series of slots, wherein axial series of gas transmission openings are formed in the shell between the axial series of slots.