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    TIVOZANIB RESPONSE PREDICTION
    2.
    发明申请
    TIVOZANIB RESPONSE PREDICTION 审中-公开
    TIVOZANIB反应预测

    公开(公告)号：US20120231478A1

    公开(公告)日：2012-09-13

    申请号：US13502476

    申请日：2010-06-03

    Applicant: Jie Lin ,  Bin Feng ,  Murray Robinson ,  Feng Jiang ,  Xiaojian Sun

    Inventor： Jie Lin ,  Bin Feng ,  Murray Robinson ,  Feng Jiang ,  Xiaojian Sun

    IPC: G01N33/566

    CPC classification number: G01N33/57492 ,  C12Q1/6886 ,  G01N33/57407 ,  G01N2333/70596 ,  G01N2800/52

    Abstract: A diagnostic method for predicting whether a human tumor will be sensitive or resistant to treatment with tivozanib (AV-951) is disclosed. The method is based on measurement of macrophage content in a tissue sample from a tumor. Measurement of macrophage content can be based on analysis of macrophage marker gene expression, e.g., by RNA analysis or immunohistochemistry.

    Abstract translation: 公开了一种诊断方法，用于预测人肿瘤是否敏感或对利托那尼治疗有抗药性（AV-951）。 该方法基于来自肿瘤的组织样品中巨噬细胞含量的测量。 巨噬细胞含量的测定可以基于巨噬细胞标记基因表达的分析，例如通过RNA分析或免疫组织化学。

    Heat sink mounting device
    3.
    发明申请
    Heat sink mounting device 失效
    散热片安装装置

    公开(公告)号：US20050174739A1

    公开(公告)日：2005-08-11

    申请号：US11018349

    申请日：2004-12-20

    Applicant: Chun-Chi Chen ,  Yi-Qiang Wu ,  Cheng-Bin Feng

    Inventor： Chun-Chi Chen ,  Yi-Qiang Wu ,  Cheng-Bin Feng

    IPC: H01L23/40 ,  H02G3/06

    CPC classification number: H01L23/4093 ,  H01L2924/0002 ,  Y10T24/44291 ,  Y10T24/44556 ,  H01L2924/00

    Abstract: A mounting device for a heat sink (200) includes a pair of pivot members (10), two jointing members (30), and two pairs of spring members (20). Each pivot member includes a clipping portion (11) for clasping the electric unit (300). The jointing members pivotably connect with the pivot members. Each jointing member includes a pressing portion (310) for resiliently abutting against the heat sink toward the electric unit. The spring members each includes two end catches (21), (22) secured with the jointing member and a corresponding member and capable of providing resilient torsions to drive the clipping portions to engage with the electric unit when the clipping portions rotate to one position away from the electric unit.

    Abstract translation: 用于散热器（200）的安装装置包括一对枢转构件（10），两个接合构件（30）和两对弹簧构件（20）。 每个枢轴构件包括用于夹紧电单元（300）的夹持部分（11）。 接合构件与枢轴构件可枢转地连接。 每个接合构件包括用于朝向电气单元弹性地抵靠散热器的按压部分（310）。 弹簧构件各自包括两个端部卡扣（21），（22），其固定有接合构件和相应的构件，并且当夹紧部分旋转到一个位置时能够提供弹性扭力来驱动夹持部分与电气单元接合 从电力单位。

    LEAD-FREE FREE-CUTTING CORROSION-RESISTANT SILICON-BISMUTH BRASS ALLOY
    5.
    发明申请
    LEAD-FREE FREE-CUTTING CORROSION-RESISTANT SILICON-BISMUTH BRASS ALLOY 有权
    无铅自由切割耐腐蚀硅 - 双相铜合金

    公开(公告)号：US20120251382A1

    公开(公告)日：2012-10-04

    申请号：US13243754

    申请日：2011-09-23

    Applicant: Feng Peng ,  Baoping Xia ,  Jianping Liu ,  Bin Feng ,  Changshun Zheng ,  Wenjian Liu

    Inventor： Feng Peng ,  Baoping Xia ,  Jianping Liu ,  Bin Feng ,  Changshun Zheng ,  Wenjian Liu

    IPC: C22C9/04

    CPC classification number: C22C9/00 ,  C22C9/08 ,  C22C9/10

    Abstract: A lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy, including the following: between 60.0 and 65.0 wt % of Cu, between 0.6 and 1.8 wt % of Si, between 0.2 and 1.5 wt % of Bi, between 0.02 and 0.5 wt % of Al, less than 1.5 wt % of Ni+Mn+Sn, between 0.01 and 0.5 wt % of La—Ce alloy, between 0.002 and 0.02 wt % of B, with the remainder being Zn and inevitable impurities, wherein the total amount of impurities are no more than 0.5 wt %.

    Abstract translation: 一种无铅自由切削耐腐蚀的铋铋黄铜合金，其包括：Cu的60.0和65.0重量％，Si的0.6-1.8重量％，Bi的0.2和1.5重量％之间，0.02和 0.5重量％的Al，小于1.5重量％的Ni + Mn + Sn，0.01〜0.5重量％的La-Ce合金，0.002〜0.02重量％的B，余量为Zn和不可避免的杂质，其中 杂质总量不超过0.5重量％。

    Lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy
    8.
    发明授权
    Lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy 有权
    无铅切削耐腐蚀硅铋黄铜合金

    公开(公告)号：US08366841B2

    公开(公告)日：2013-02-05

    申请号：US13243754

    申请日：2011-09-23

    Applicant: Feng Peng ,  Baoping Xia ,  Jianping Liu ,  Bin Feng ,  Changshun Zheng ,  Wenjian Liu

    Inventor： Feng Peng ,  Baoping Xia ,  Jianping Liu ,  Bin Feng ,  Changshun Zheng ,  Wenjian Liu

    IPC: C22C9/04

    CPC classification number: C22C9/00 ,  C22C9/08 ,  C22C9/10

    Abstract: A lead-free free-cutting corrosion-resistant silicon-bismuth brass alloy, including the following: between 60.0 and 65.0 wt % of Cu, between 0.6 and 1.8 wt % of Si, between 0.2 and 1.5 wt % of Bi, between 0.02 and 0.5 wt % of Al, less than 1.5 wt % of Ni+Mn+Sn, between 0.01 and 0.5 wt % of La—Ce alloy, between 0.002 and 0.02 wt % of B, with the remainder being Zn and inevitable impurities, wherein the total amount of impurities are no more than 0.5 wt %.

    Abstract translation: 一种无铅自由切削耐腐蚀的铋铋黄铜合金，其包括：Cu的60.0和65.0重量％，Si的0.6-1.8重量％，Bi的0.2和1.5重量％之间，0.02和 0.5重量％的Al，小于1.5重量％的Ni + Mn + Sn，0.01〜0.5重量％的La-Ce合金，0.002〜0.02重量％的B，余量为Zn和不可避免的杂质，其中 杂质总量不超过0.5重量％。

    Memory control system and method to read data from memory
    9.
    发明授权
    Memory control system and method to read data from memory 有权
    从内存读取数据的内存控制系统和方法

    公开(公告)号：US07861045B2

    公开(公告)日：2010-12-28

    申请号：US11987879

    申请日：2007-12-05

    Applicant: Chien-Chou Chen ,  Bin Feng Hung ,  Chi-Chang Lu

    Inventor： Chien-Chou Chen ,  Bin Feng Hung ,  Chi-Chang Lu

    IPC: G06F12/00

    CPC classification number: G06F13/1689

    Abstract: The invention discloses a memory control system and a method to read data from memory. The memory control system comprises a control unit, a storage device, and a microprocessor. The memory control system and the method to read data from memory according to the invention utilize an unbalanced microprocessor clock signal with different duration length to control the microprocessor so as to increase the speed of reading memory.

    Abstract translation: 本发明公开了一种从存储器读取数据的存储器控​​制系统和方法。 存储器控制系统包括控制单元，存储设备和微处理器。 根据本发明的存储器控​​制系统和从存储器读取数据的方法利用具有不同持续时间长度的不平衡微处理器时钟信号来控制微处理器以增加读取存储器的速度。

    Method for controlling a DRAM
    10.
    发明申请
    Method for controlling a DRAM 审中-公开
    控制DRAM的方法

    公开(公告)号：US20090125761A1

    公开(公告)日：2009-05-14

    申请号：US12116208

    申请日：2008-05-07

    Applicant: Wen-Min Lu ,  Bin-Feng Hung ,  Ming-Sung Huang

    Inventor： Wen-Min Lu ,  Bin-Feng Hung ,  Ming-Sung Huang

    IPC: G11C29/04

    CPC classification number: G11C29/70

    Abstract: A method for controlling a DRAM includes detecting failed memory cells of the DRAM, recording the rows corresponding to the failed memory cells, receiving a control signal for accessing the memory cell with column address X and row address Y, determining if the row address Y is in the recorded failed rows list, and if yes, replacing the memory cell to be accessed with the memory cell with the column address X and row address Z which is not same as Y.

    Abstract translation: 用于控制DRAM的方法包括检测DRAM的故障存储单元，记录与故障存储单元相对应的行，接收用列地址X和行地址Y访问存储单元的控制信号，确定行地址Y是否为 在记录的失败行列表中，如果是，则使用不同于Y的列地址X和行地址Z替换要访问的存储单元。

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