公开(公告)号：US08687136B2

公开(公告)日：2014-04-01

申请号：US13437381

申请日：2012-04-02

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

IPC: G02F1/1343 ,  G02F1/1333

CPC classification number: G02F1/136259 ,  G02F1/136213 ,  G02F2202/42

Abstract: A repairing method for a pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The repairing method includes removing a portion of the pixel electrode to electrically isolate the contact region over the upper electrode from the remaining portion of the pixel electrode, wherein a storage capacitor is formed by the reserved region over the upper electrode, the second dielectric layer and the remaining portion of the pixel electrode.

Abstract translation: 一种像素结构的修复方法，包括有源器件，与有源器件连接的像素电极，设置在像素电极下方的底部电极，设置在像素电极和底部电极之间并与像素电极连接的上部电极，第一 设置在底电极和上电极之间的介质层和设置在上电极和像素电极之间的第二电介质层。 修复方法包括去除像素电极的一部分以将上电极上的接触区域与像素电极的剩余部分电隔离，其中存储电容器由上电极，第二电介质层和第二电介质层上的保留区域形成， 像素电极的剩余部分。

公开(公告)号：US07330221B2

公开(公告)日：2008-02-12

申请号：US10906710

申请日：2005-03-03

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

IPC: G02F1/1333 ,  G02F1/136

CPC classification number: G02F1/136259 ,  G02F1/1343 ,  G02F1/136213

Abstract: A thin film transistor array substrate and a repairing method thereof are provided. The thin film transistor array substrate comprises a substrate, plural scan lines, plural data lines, plural common lines, and plural pixels. The scan lines and the data lines are disposed over the substrate and define plural pixel areas. Each pixel is disposed in one of the pixel areas corresponding thereto. Each pixel comprises a thin film transistor, a pixel electrode, a top electrode, and a conductive line. In each pixel, the thin film transistor is coupled to the corresponding scan line and the corresponding data line, and the pixel electrode is disposed over the corresponding common line. Furthermore, the top electrode is disposed between the corresponding pixel electrode and common line, and the conductive line is disposed out of the corresponding common line and coupled between the corresponding top electrode and pixel electrode.

Abstract translation: 提供薄膜晶体管阵列基板及其修复方法。 薄膜晶体管阵列基板包括基板，多条扫描线，多条数据线，多条公共线和多个像素。 扫描线和数据线设置在衬底上并限定多个像素区域。 每个像素被布置在与其对应的像素区域之一中。 每个像素包括薄膜晶体管，像素电极，顶部电极和导电线。 在每个像素中，薄膜晶体管耦合到对应的扫描线和对应的数据线，并且像素电极设置在相应的公共线上。 此外，顶部电极设置在相应的像素电极和公共线之间，并且导线布置在相应的公共线之外并且耦合在相应的顶部电极和像素电极之间。

公开(公告)号：US20060232722A1

公开(公告)日：2006-10-19

申请号：US11160821

申请日：2005-07-12

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

IPC: G02F1/1333

CPC classification number: G02F1/136259 ,  G02F1/136213 ,  G02F2202/42

Abstract: A pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The total area of the upper electrodes overlapping with the bottom electrode is A, and the overlapping portion of the pixel electrode and each upper electrode includes a contact region and a reserved region having total area B. The dielectric constant and thickness of the first dielectric layer is ∈1 and d1; and for second dielectric layer ∈2 and d2, wherein 0.5

Abstract translation: 包括有源器件，与有源器件连接的像素电极，设置在像素电极下方的底部电极的像素结构，设置在像素电极和底部电极之间并与像素电极连接的上部电极，设置在像素电极之间的第一电介质层 设置底部电极和上部电极以及设置在上部电极和像素电极之间的第二电介质层。 与底部电极重叠的上部电极的总面积为A，像素电极和各上部电极的重叠部分包括接触区域和具有总面积B的保留区域。第一电介质层的介电常数和厚度 是∈1 和d 1＆lt; 1＆gt;; 并且对于第二介电层∈2和d 2，其中0.5 <（1 2 2） /(∈₂.d₁.B)<1.5。

公开(公告)号：US07518687B2

公开(公告)日：2009-04-14

申请号：US11162764

申请日：2005-09-22

Applicant: Yi-Jen Chen ,  Cheng-Han Tsao ,  Wei-Kai Huang ,  Ming-Chou Wu ,  Chen-Shun Tsai ,  Chiung-Pin Wang ,  Yi-Pai Huang

Inventor： Yi-Jen Chen ,  Cheng-Han Tsao ,  Wei-Kai Huang ,  Ming-Chou Wu ,  Chen-Shun Tsai ,  Chiung-Pin Wang ,  Yi-Pai Huang

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F1/133707 ,  G02F1/134309 ,  H01L27/13

Abstract: A pixel structure electrically connected to a scan line and a data line, includes an active device, a first pixel electrode, a second pixel electrode, a capacitor coupling electrode and a charge releasing device. The active device is electrically connected to the scan line and the data line. The second pixel electrode is electrically isolated from the first pixel electrode. The capacitor coupling electrode is disposed under the second pixel electrode and electrically connected to the data line through the active device. The charge releasing device is electrically connected to the second pixel electrode. The above-described pixel structure is able to effectively solve the image sticking problem. In addition, further provides an active matrix substrate which is able to avoid the image sticking effect.

Abstract translation: 电连接到扫描线和数据线的像素结构包括有源器件，第一像素电极，第二像素电极，电容器耦合电极和电荷释放器件。 有源器件电连接到扫描线和数据线。 第二像素电极与第一像素电极电隔离。 电容耦合电极设置在第二像素电极下方，并通过有源器件与数据线电连接。 电荷释放装置电连接到第二像素电极。 上述像素结构能够有效地解决图像残留问题。 此外，还提供能够避免图像残留效应的有源矩阵基板。

公开(公告)号：US20120190265A1

公开(公告)日：2012-07-26

申请号：US13437381

申请日：2012-04-02

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

IPC: H01J9/50

CPC classification number: G02F1/136259 ,  G02F1/136213 ,  G02F2202/42

Abstract: A repairing method for a pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The repairing method includes removing a portion of the pixel electrode to electrically isolate the contact region over the upper electrode from the remaining portion of the pixel electrode, wherein a storage capacitor is formed by the reserved region over the upper electrode, the second dielectric layer and the remaining portion of the pixel electrode.

Abstract translation: 一种像素结构的修复方法，包括有源器件，与有源器件连接的像素电极，设置在像素电极下方的底部电极，设置在像素电极和底部电极之间并与像素电极连接的上部电极，第一 设置在底电极和上电极之间的介质层和设置在上电极和像素电极之间的第二电介质层。 修复方法包括去除像素电极的一部分以将上电极上的接触区域与像素电极的剩余部分电隔离，其中存储电容器由上电极，第二电介质层和第二电介质层上的保留区域形成， 像素电极的剩余部分。

公开(公告)号：US08169561B2

公开(公告)日：2012-05-01

申请号：US11160821

申请日：2005-07-12

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Tzu-Chieh Lai ,  Chiung-Pin Wang

IPC: G02F1/1343 ,  G02F1/1333

CPC classification number: G02F1/136259 ,  G02F1/136213 ,  G02F2202/42

Abstract: A pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The total area of the upper electrodes overlapping with the bottom electrode is A, and the overlapping portion of the pixel electrode and each upper electrode includes a contact region and a reserved region having total area B. The dielectric constant and thickness of the first dielectric layer is ∈1 and d1; and for second dielectric layer ∈2 and d2, wherein 0.5

Abstract translation: 包括有源器件，与有源器件连接的像素电极，设置在像素电极下方的底部电极的像素结构，设置在像素电极和底部电极之间并与像素电极连接的上部电极，设置在像素电极之间的第一电介质层 设置底部电极和上部电极以及设置在上部电极和像素电极之间的第二电介质层。 与底部电极重叠的上部电极的总面积为A，像素电极和各上部电极的重叠部分包括接触区域和具有总面积B的保留区域。第一电介质层的介电常数和厚度 是∈1和d1; 对于第二介质层∈2和d2，其中0.5 <（∈1·d2·A）/（∈2·d1·B）<1.5。

公开(公告)号：US07576806B2

公开(公告)日：2009-08-18

申请号：US11030701

申请日：2005-01-05

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

IPC: G02F1/1343 ,  G02F1/1337

CPC classification number: G02F1/136259 ,  G02F1/136213

Abstract: A thin film transistor array substrate and method for repairing the same are provided. Each pixel unit of the thin film transistor array substrate has a plurality of upper electrodes, which are coupled to a common line to form a plurality of storage capacitors. If a storage capacitor defects, the portion of the pixel electrode corresponding to the defective storage capacitor is electrically isolated from the other portion of the pixel electrode in the pixel unit. Therefore, the other storage capacitors in the pixel unit can normally display. The thin film transistor array substrate and method for repairing the same provided by the present invention repair the defective storage capacitor in the thin film transistor array substrate and improve the manufacturing yield.

Abstract translation: 提供薄膜晶体管阵列基板及其修理方法。 薄膜晶体管阵列基板的每个像素单元具有多个上电极，其被耦合到公共线以形成多个存储电容器。 如果存储电容器存在缺陷，则与像素单元中的像素电极的其他部分电气隔离对应于不良存储电容器的像素电极的部分。 因此，可以正常显示像素单元中的其他存储电容器。 本发明提供的薄膜晶体管阵列基板及其修补方法修复了薄膜晶体管阵列基板中的有缺陷的存储电容器，并提高了制造成品率。

公开(公告)号：US20060262237A1

公开(公告)日：2006-11-23

申请号：US11162764

申请日：2005-09-22

Applicant: Yi-Jen Chen ,  Cheng-Han Tsao ,  Wei-Kai Huang ,  Ming-Chou Wu ,  Chen-Shun Tsai ,  Chiung-Pin Wang ,  Yi-Pai Huang

Inventor： Yi-Jen Chen ,  Cheng-Han Tsao ,  Wei-Kai Huang ,  Ming-Chou Wu ,  Chen-Shun Tsai ,  Chiung-Pin Wang ,  Yi-Pai Huang

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F1/133707 ,  G02F1/134309 ,  H01L27/13

Abstract: A pixel structure electrically connected to a scan line and a data line, includes an active device, a first pixel electrode, a second pixel electrode, a capacitor coupling electrode and a charge releasing device. The active device is electrically connected to the scan line and the data line. The second pixel electrode is electrically isolated from the first pixel electrode. The capacitor coupling electrode is disposed under the second pixel electrode and electrically connected to the data line through the active device. The charge releasing device is electrically connected to the second pixel electrode. The above-described pixel structure is able to effectively solve the image sticking problem. In addition, further provides an active matrix substrate which is able to avoid the image sticking effect.

Abstract translation: 电连接到扫描线和数据线的像素结构包括有源器件，第一像素电极，第二像素电极，电容器耦合电极和电荷释放器件。 有源器件电连接到扫描线和数据线。 第二像素电极与第一像素电极电隔离。 电容耦合电极设置在第二像素电极下方，并通过有源器件与数据线电连接。 电荷释放装置电连接到第二像素电极。 上述像素结构能够有效地解决图像残留问题。 此外，还提供能够避免图像残留效应的有源矩阵基板。

公开(公告)号：US20060146215A1

公开(公告)日：2006-07-06

申请号：US10906710

申请日：2005-03-03

Applicant: Wei-Kai Huang ,  Jen-Yi Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Jen-Yi Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

IPC: G02F1/136

CPC classification number: G02F1/136259 ,  G02F1/1343 ,  G02F1/136213

Abstract: A thin film transistor array substrate and a repairing method thereof are provided. The thin film transistor array substrate comprises a substrate, plural scan lines, plural data lines, plural common lines, and plural pixels. The scan lines and the data lines are disposed over the substrate and define plural pixel areas. Each pixel is disposed in one of the pixel areas corresponding thereto. Each pixel comprises a thin film transistor, a pixel electrode, a top electrode, and a conductive line. In each pixel, the thin film transistor is coupled to the corresponding scan line and the corresponding data line, and the pixel electrode is disposed over the corresponding common line. Furthermore, the top electrode is disposed between the corresponding pixel electrode and common line, and the conductive line is disposed out of the corresponding common line and coupled between the corresponding top electrode and pixel electrode.

Abstract translation: 提供薄膜晶体管阵列基板及其修复方法。 薄膜晶体管阵列基板包括基板，多条扫描线，多条数据线，多条公共线和多个像素。 扫描线和数据线设置在衬底上并限定多个像素区域。 每个像素被布置在与其对应的像素区域之一中。 每个像素包括薄膜晶体管，像素电极，顶部电极和导电线。 在每个像素中，薄膜晶体管耦合到对应的扫描线和对应的数据线，并且像素电极设置在相应的公共线上。 此外，顶部电极设置在相应的像素电极和公共线之间，并且导线布置在相应的公共线之外并且耦合在相应的顶部电极和像素电极之间。

公开(公告)号：US20060092341A1

公开(公告)日：2006-05-04

申请号：US11030701

申请日：2005-01-05

Applicant: Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

Inventor： Wei-Kai Huang ,  Yi-Jen Chen ,  Chen-Shun Tsai ,  Chiung-Pin Wang

IPC: G02F1/1343

CPC classification number: G02F1/136259 ,  G02F1/136213

Abstract: A thin film transistor array substrate and method for repairing the same are provided. Each pixel unit of the thin film transistor array substrate has a plurality of upper electrodes, which are coupled to a common line to form a plurality of storage capacitors. If a storage capacitor defects, the portion of the pixel electrode corresponding to the defective storage capacitor is electrically isolated from the other portion of the pixel electrode in the pixel unit. Therefore, the other storage capacitors in the pixel unit can normally display. The thin film transistor array substrate and method for repairing the same provided by the present invention repair the defective storage capacitor in the thin film transistor array substrate and improve the manufacturing yield.

Abstract translation: 提供薄膜晶体管阵列基板及其修理方法。 薄膜晶体管阵列基板的每个像素单元具有多个上电极，其被耦合到公共线以形成多个存储电容器。 如果存储电容器存在缺陷，则与像素单元中的像素电极的其他部分电气隔离对应于不良存储电容器的像素电极的部分。 因此，可以正常显示像素单元中的其他存储电容器。 本发明提供的薄膜晶体管阵列基板及其修补方法修复了薄膜晶体管阵列基板中的有缺陷的存储电容器，并提高了制造成品率。