Abstract:
A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer, this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.
Abstract:
A package structure for a semiconductor is described. The advantages thereof are that it has a great structural strength and when being penetrated by light, it will not be influenced by external light and can condense the light. Therefore, it is not easily be deformed so that the yield and quality of package can be increased, and when packaging an LED chip, it easily meets the package requirements of an electronic chip. In addition, the substrate structure is cheaper than the prior art, because a double-layered substrate is employed to improve the strength, and the package structure is also preferred because an external frame device is additionally used for preventing interference by external light. The package structure for the semiconductor has a substrate, an external frame device and a polymer filler.
Abstract:
A multi-wavelength white light-emitting structure uses a UV light emitting diode chip and a blue light emitting diode chip to excite a red phosphor and a green phosphor and generates a white light-emitting structure having good color rendering. The multi-wavelength white light-emitting structure uses a UV light emitting diode chip that emits light having a wavelength of between 350˜430 nm to excite a red phosphor to emit red light having a wavelength of between 600˜700 nm. The present invention then uses a blue light emitting diode chip that emits light having a wavelength between of 400˜500 nm to emit blue light and uses the blue light emitting diode chip to excite a green phosphor to emit green light having a wavelength of between 490˜560 nm. Mixing the red light, the blue light and the green light forms a white light.
Abstract:
A package structure for a semiconductor is described. The advantages thereof are that it has a great structural strength and when being penetrated by light, it will not be influenced by external light and can condense the light. Therefore, it is not easily be deformed so that the yield and quality of package can be increased, and when packaging an LED chip, it easily meets the package requirements of an electronic chip. In addition, the substrate structure is cheaper than the prior art, because a double-layered substrate is employed to improve the strength, and the package structure is also preferred because an external frame device is additionally used for preventing interference by external light. The package structure for the semiconductor has a substrate, an external frame device and a polymer filler.
Abstract:
A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer. this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.
Abstract:
A light guide plate with an adjustable illumination angle and an illumination device using the same are provided. The light guide plate has a first surface and a second surface opposite to the first surface. The second surface further has a plurality of deformable microstructures thereon. The deformable microstructures will be deformed when an external force is applied to the deformable microstructures. The illumination device has a light source and a light guide plate that is disposed next to the light source. A light beam emitted from the light source enters into the light guide plate and leaves the light guide plate via reflecting or refracting by the deformable microstructures. By applying a different external force to the light guide plate, the deformation of the deformable microstructures will be varied. Therefore, the illumination angle of the light beam could be changed according to the deformation of the deformable microstructures.
Abstract:
A light guide plate with an adjustable illumination angle and an illumination device using the same are provided. The light guide plate has a first surface and a second surface opposite to the first surface. The second surface further has a plurality of deformable microstructures thereon. The deformable microstructures will be deformed when an external force is applied to the deformable microstructures. The illumination device has a light source and a light guide plate that is disposed next to the light source. A light beam emitted from the light source enters into the light guide plate and leaves the light guide plate via reflecting or refracting by the deformable microstructures. By applying a different external force to the light guide plate, the deformation of the deformable microstructures will be varied. Therefore, the illumination angle of the light beam could be changed according to the deformation of the deformable microstructures.
Abstract:
A light emitting diode (LED) is provided. The LED comprises a semiconductor composite layer stacked laterally and a phosphor substrate. The phosphor substrate covers a lateral surface of the semiconductor composite layer.
Abstract:
A wafer level LED package structure includes a light-emitting unit, a reflecting unit, a first conductive unit and a second conductive unit. The light-emitting unit has a substrate body, a light-emitting body disposed on the substrate body, a positive and a negative conductive layers formed on the light-emitting body, and a light-emitting area formed in the light-emitting body. The reflecting unit has a reflecting layer formed between the positive and the negative conductive layers and on the substrate body for covering external sides of the light-emitting body. The first conductive unit has a first positive conductive layer formed on the positive conductive layer and a first negative conductive layer formed on the negative conductive layer. The second conductive unit has a second positive conductive structure formed on the first positive conductive layer and a second negative conductive structure formed on the first negative conductive layer.
Abstract:
A multi-wavelength white light-emitting structure uses a UV light emitting diode chip and a blue light emitting diode chip to excite a red phosphor and a green phosphor and generates a white light-emitting structure having good color rendering. The multi-wavelength white light-emitting structure uses a UV light emitting diode chip that emits light having a wavelength of between 350˜430 nm to excite a red phosphor to emit red light having a wavelength of between 600˜700 nm. The present invention then uses a blue light emitting diode chip that emits light having a wavelength between of 400˜500 nm to emit blue light and uses the blue light emitting diode chip to excite a green phosphor to emit green light having a wavelength of between 490˜560 nm. Mixing the red light, the blue light and the green light forms a white light.