公开(公告)号：US20250151460A1

公开(公告)日：2025-05-08

申请号：US18930694

申请日：2024-10-29

Applicant: EPISTAR CORPORATION

Inventor： Yung-Chung PAN ,  Ming-Pao CHEN ,  Peng-Ren CHEN

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A semiconductor structure includes a first semiconductor stack having a first conductivity type, a second semiconductor stack having a second conductivity type, an active structure disposed between the first semiconductor stack and the second semiconductor stack, and an aluminum-containing cap layer in the active structure. The active structure includes a plurality of group III nitride barrier layers and a plurality of group III-nitride quantum well layers which are alternately stacked. The thickness of the group III-nitride barrier layers is ranged between 200 angstroms to 550 angstroms, and the aluminum-containing cap layer is disposed between the group III nitride quantum well layers and the group III nitride barrier layers, and the active structure has a wavelength of at least 600 nm.

公开(公告)号：US20250143026A1

公开(公告)日：2025-05-01

申请号：US19009855

申请日：2025-01-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chao-Hsing CHEN ,  Chi-Ling LEE ,  Chen OU ,  Min-Hsun HSIEH

IPC: H10H20/831 ,  H01L25/13 ,  H10H20/833

Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.

公开(公告)号：US20250112443A1

公开(公告)日：2025-04-03

申请号：US18899846

申请日：2024-09-27

Applicant: Epistar Corporation

Inventor： Po-Chou PAN ,  Chen OU ,  Shih-Chang LEE ,  Wei-Chih PENG ,  Yao-Ru CHANG ,  Hao-Chun LIANG

IPC: H01S5/11 ,  H01S5/042

Abstract: An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.

公开(公告)号：US20250056930A1

公开(公告)日：2025-02-13

申请号：US18799505

申请日：2024-08-09

Applicant: EPISTAR CORPORATION

Inventor： Tzu Yun Feng ,  Wei Shan Yeoh ,  Yao-Ning Chan ,  June Kuo

IPC: H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64

Abstract: A semiconductor device includes a semiconductor stack, an insulating structure, a metal oxide structure and a metal structure. The semiconductor stack includes a first semiconductor structure, a second semiconductor structure and an active structure located between the first semiconductor structure and the second semiconductor structure. The insulating structure is disposed below the first semiconductor structure and comprising a first opening and a second opening. The metal oxide structure is disposed below the insulating structure and located in the first opening, and contacts the semiconductor stack to form a first contact surface therebetween. The metal structure is located in the second opening, and contacts the semiconductor stack to form a second contact surface therebetween. The first contact surface is separated from the second contact surface.

公开(公告)号：US12166156B2

公开(公告)日：2024-12-10

申请号：US18401106

申请日：2023-12-29

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Tzu-Yao Tseng ,  Tsung-Hsun Chiang ,  Bo-Jiun Hu ,  Wen-Hung Chuang ,  Yu-Ling Lin

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/02 ,  H01L33/08 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

公开(公告)号：US12163630B2

公开(公告)日：2024-12-10

申请号：US18396394

申请日：2023-12-26

Applicant: EPISTAR CORPORATION

Inventor： Wei-Chiang Hu ,  Keng-Chuan Chang ,  Chiu-Lin Yao ,  Chun-Wei Lin ,  Jung-Chang Sun

IPC: F21K9/23 ,  F21K9/00 ,  F21V19/00 ,  F21Y105/10 ,  F21Y115/10

Abstract: A light-emitting unit, having a substrate; a first light-emitting body formed on the substrate, and having a first longer side and a first shorter side; a second light-emitting body formed on the substrate, and having a second longer side and a second shorter side which is parallel to the first longer side; a third light-emitting body formed on the substrate, having a third longer side and a third shorter side which is parallel to the first longer side, and electrically connected to the first light-emitting body and the second light-emitting body; a first electrode covering the first light-emitting body and the second light-emitting body, and electrically connecting to the first light-emitting body; a second electrode separated from the first electrode, and covering the second light-emitting body without covering the first light-emitting body; and a transparent element enclosing the first light-emitting body, the second light-emitting body, and the third light-emitting body.

公开(公告)号：US20240405169A1

公开(公告)日：2024-12-05

申请号：US18675532

申请日：2024-05-28

Applicant: EPISTAR CORPORATION

Inventor： Chong-Yu WANG ,  Wei-Shan HU ,  Ching-Tai CHENG ,  Chien-Chih CHEN ,  Min-Hsun HSIEH

IPC: H01L33/50 ,  H01L25/16

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

公开(公告)号：US12125943B2

公开(公告)日：2024-10-22

申请号：US18505348

申请日：2023-11-09

Applicant: EPISTAR CORPORATION

Inventor： Huan-Yu Lai ,  Li-Chi Peng

IPC: H01L33/14 ,  H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325

Abstract: A semiconductor device is provided. The semiconductor device includes a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; an active region between the second semiconductor layer and the first semiconductor layer; an electron blocking structure between the active region and the second semiconductor layer; a first nitride semiconductor layer between the active region and the electron blocking structure; and a second nitride semiconductor layer between the electron blocking structure and the second semiconductor layer. The first nitride semiconductor layer includes a first indium content, a first aluminum content and a first conductivity-type dopant. The second nitride semiconductor layer includes a second indium content, a second aluminum content and a second conductivity-type dopant. The electron blocking structure includes a first semiconductor layer including a third indium content and a third aluminum content; wherein the third indium content is greater than the second indium content.

公开(公告)号：US20240339564A1

公开(公告)日：2024-10-10

申请号：US18625617

申请日：2024-04-03

Applicant: EPISTAR CORPORATION

Inventor： Wei-Che WU ,  Chih-Hao CHEN ,  Yu-Ling LIN ,  Chao-Hsing CHEN ,  Yong-Yang CHEN

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/60

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

公开(公告)号：US20240339345A1

公开(公告)日：2024-10-10

申请号：US18749201

申请日：2024-06-20

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/683 ,  H01L33/00

CPC classification number: H01L21/67721 ,  H01L21/67144 ,  H01L21/67288 ,  H01L21/6773 ,  H01L21/6836 ,  H01L33/0075 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368

Abstract: A chip transferring method includes steps of: providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion of the plurality of chips and a second portion of the plurality of chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion of the plurality of chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion of the plurality of chips from the first load-bearing structure; dividing the first portion of the plurality of chips into a plurality of blocks, wherein each of the plurality of blocks comprising multiple chips of the first portion of the plurality of chips; and transferring the first portion of the plurality of chips in one of the plurality of blocks to a second load-bearing structure in single-batch.