公开(公告)号：US12284822B2

公开(公告)日：2025-04-22

申请号：US17826724

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Yasushi Higuchi

IPC: H10D30/67 ,  H10D30/69 ,  H10D64/60

Abstract: There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2/V·s or higher.

公开(公告)号：US20250022791A1

公开(公告)日：2025-01-16

申请号：US18901920

申请日：2024-09-30

Applicant: Flosfia Inc.

Inventor： Hiroshi KONDO ,  Tatsuhiro NAKAZAWA ,  Kengo TAKEUCHI ,  Takashi SHINOHE

IPC: H01L23/498

Abstract: Provided is a semiconductor device including: a first wiring layer; a holding layer; a semiconductor element that is disposed between the first wiring layer and the holding layer and includes at least a semiconductor layer and a first electrode disposed on a first surface of the semiconductor layer; an insulator in which at least a part of the semiconductor element is embedded; and a first connecting portion that electrically connects the first wiring layer and the first electrode, wherein a connection area between the first connecting portion and the first electrode occupies 45% or more of an area of an exposed part of the first electrode.

公开(公告)号：US12191372B2

公开(公告)日：2025-01-07

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei Kanno ,  Osamu Imafuji ,  Kazuyoshi Norimatsu ,  Yuji Kato

IPC: H01L29/45 ,  H01L23/367 ,  H01L29/24 ,  H01L29/66 ,  H01L29/872 ,  H02M3/335

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US12159940B2

公开(公告)日：2024-12-03

申请号：US17575838

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Yasushi Higuchi ,  Yusuke Matsubara ,  Osamu Imafuji ,  Takashi Shinohe

IPC: H01L29/872 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/78 ,  H01L29/786

Abstract: Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

公开(公告)号：US20240387643A1

公开(公告)日：2024-11-21

申请号：US18787102

申请日：2024-07-29

Applicant: FLOSFIA INC.

Inventor： Mutsumi OKA ,  Atsushi TERAI ,  Hidetaka SHIBATA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: Provided a multilayer structure including at least: a semiconductor layer containing a crystalline oxide semiconductor as a major component; and a conductive substrate layered on the semiconductor layer, wherein the multilayer structure has a first direction in a plane perpendicular to a layering direction of the multilayer structure and a second direction perpendicular or substantially perpendicular to the first direction, and a first coefficient of linear expansion being a coefficient of linear expansion in the first direction of the conductive substrate is smaller than a second coefficient of linear expansion being a coefficient of linear expansion in the second direction of the conductive substrate, and a third coefficient of linear expansion being a coefficient of linear expansion in the first direction of the semiconductor layer is smaller than a fourth coefficient of linear expansion being a coefficient of linear expansion in the second direction of the semiconductor layer.

公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

Applicant: Flosfia Inc.

Inventor： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC: H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC classification number: H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

Abstract: Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US20240307914A1

公开(公告)日：2024-09-19

申请号：US18603922

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto SHIMIZU ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: B05D1/00 ,  C09D4/00

CPC classification number: B05D1/60 ,  B05D1/005 ,  C09D4/00 ,  B05D2203/30

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
The present disclosure provides a film formation method using one aqueous solution or different aqueous solutions containing at least one of a metal complex having two or more different ligands and a metal complex having same ligands and substituents as well as a gallium compound, in which the metal complex having the two or more different ligands has nitrogen atom, and the metal complex having the same ligands and substituents has a halogen atom.

公开(公告)号：US20240202418A1

公开(公告)日：2024-06-20

申请号：US18430948

申请日：2024-02-02

Applicant: Flosfia Inc. ,  Mitsubishi Heavy Industries, Ltd.

Inventor： Masato Ito ,  Masaya Mitake ,  Kengo Takeuchi ,  Toshimi Hitora ,  Fujio Okui

IPC: G06F30/392

CPC classification number: G06F30/392

Abstract: A design support apparatus supports design of a component embedded substrate including an embedded electronic component that configures at least a part of a circuit. The apparatus includes a component information acquiring unit that acquires component information containing component identifying information about the electronic component to be incorporated in the substrate, a pad information acquiring unit that acquires pad information about a type and number of electrode pads to be arranged on the substrate based on the component information, a mounting arrangement information acquiring unit that acquires mounting arrangement information about the arrangement of the substrate and another component on a mounting board in which the component embedded substrate is to be incorporated, and a pad arrangement selecting unit that selects the arrangement of the electrode pad on a surface of the substrate based on the mounting arrangement information and the pad information.

公开(公告)号：US20240055510A1

公开(公告)日：2024-02-15

申请号：US18384121

申请日：2023-10-26

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Shinpei MATSUDA ,  Yasushi HIGUCHI ,  Kazuyoshi NORIMATSU

IPC: H01L29/78 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7802 ,  H01L29/24 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/66969 ,  H02P27/06

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.

公开(公告)号：US20230290888A1

公开(公告)日：2023-09-14

申请号：US18106095

申请日：2023-02-06

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Shogo MIZUMOTO ,  Hiroyuki ANDO ,  Yusuke MATSUBARA

IPC: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

CPC classification number: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.