公开(公告)号：US09735754B2

公开(公告)日：2017-08-15

申请号：US13558907

申请日：2012-07-26

Applicant: Jea Shik Shin ,  In Sang Song ,  Young Il Kim ,  Duck Hwan Kim ,  Chul Soo Kim ,  Sang Uk Son ,  Hyung Rak Kim ,  Jae Chun Lee

Inventor： Jea Shik Shin ,  In Sang Song ,  Young Il Kim ,  Duck Hwan Kim ,  Chul Soo Kim ,  Sang Uk Son ,  Hyung Rak Kim ,  Jae Chun Lee

IPC: H03H9/15 ,  H03H9/54 ,  H03H9/70 ,  H03H9/02 ,  H03H9/58 ,  H03H9/17

CPC classification number: H03H9/02102 ,  H03H9/171 ,  H03H9/173 ,  H03H9/174 ,  H03H9/588 ,  H03H9/706

Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.

公开(公告)号：US08987666B2

公开(公告)日：2015-03-24

申请号：US13616445

申请日：2012-09-14

Applicant: Ho Soo Park ,  In Sang Song ,  Duck Hwan Kim ,  Chul Soo Kim ,  Sang Uk Son ,  Jea Shik Shin ,  Cui Jing

Inventor： Ho Soo Park ,  In Sang Song ,  Duck Hwan Kim ,  Chul Soo Kim ,  Sang Uk Son ,  Jea Shik Shin ,  Cui Jing

IPC: G01J5/44

CPC classification number: G01J5/44

Abstract: A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.

Abstract translation: 描述了一种温度检测装置和方法，以检测由于温度变化引起的频率变化。 还提供了一种红外光感测装置和方法。 温度检测装置可以包括用于产生电信号的电极，将电信号转换成声波的压电层，以及通过在衬底上形成的一个或多个结构中掺杂杂质形成的温度敏感层。 此外，红外光检测装置可以使用红外光反射层和红外光吸收层转换入入红外光吸收层的热红外光。 温度敏感层可以基于热的温度的变化来检测谐振频率的变化，并且可以基于谐振频率的变化来检测红外光的变化。

公开(公告)号：US08963654B2

公开(公告)日：2015-02-24

申请号：US12837630

申请日：2010-07-16

Applicant: Yun Kwon Park ,  In Sang Song ,  Duck Hwan Kim ,  Chul Soo Kim ,  Jea Shik Shin

Inventor： Yun Kwon Park ,  In Sang Song ,  Duck Hwan Kim ,  Chul Soo Kim ,  Jea Shik Shin

IPC: H03H9/58 ,  H03H9/00 ,  H03H9/60 ,  H03H9/17

CPC classification number: H03H9/0095 ,  H03H9/0023 ,  H03H9/173 ,  H03H9/605

Abstract: A Dual Input, Dual Output filtering apparatus using a Bulk Acoustic Wave Resonators (BAWR), and a resonator used as the BAWR may be provided. A Dual Input, Dual Output filtering apparatus may include a plurality of BAWRs connected in series and parallel.

Abstract translation: 可以提供使用体声波谐振器（BAWR）的双输入双输出滤波装置和用作BAWR的谐振器。 双输入双输出滤波装置可以包括串联和并联连接的多个BAWR。

公开(公告)号：US08937370B2

公开(公告)日：2015-01-20

申请号：US13430160

申请日：2012-03-26

Applicant: In-Sang Song ,  Sang-Sub Song

Inventor： In-Sang Song ,  Sang-Sub Song

IPC: H01L23/552 ,  H01L23/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

Abstract translation: 本公开提供了一种存储器件及其制造方法。 存储器件包括：衬底，其包括形成在其中的第一金属层，第一金属层至少具有第一表面，第一表面的至少第一暴露部分暴露在衬底的侧表面处;至少第一半导体芯片 形成在所述基板的顶表面上，以及第二金属层，所述第二金属层包围所述第一半导体芯片并且延伸到所述基板的侧表面，所述第二金属层的至少第一部分接触所述第一金属层的暴露表面。

公开(公告)号：US08928129B2

公开(公告)日：2015-01-06

申请号：US13550186

申请日：2012-07-16

Applicant: In-Sang Song

Inventor： In-Sang Song

IPC: H01L23/552 ,  H01L23/04 ,  H01L27/08 ,  H01L29/40 ,  H01L21/76 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L24/97 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the first surface of the substrate. The first molding member is formed on the first surface of the substrate and covers the semiconductor chip while not covering the first exposed surface. The metal layer covers the first molding member and extends to lateral surfaces of the substrate while contacting the first exposed surface.

Abstract translation: 半导体器件包括衬底，半导体芯片，第一模制构件和金属层。 衬底包括形成在其中的第一接地焊盘，第一接地焊盘具有暴露在衬底的第一表面处的第一暴露表面。 半导体芯片形成在基板的第一表面上。 第一模制构件形成在基板的第一表面上并且覆盖半导体芯片而不覆盖第一暴露表面。 金属层覆盖第一模制构件并且在与第一暴露表面接触的同时延伸到基板的侧表面。

公开(公告)号：US08659098B2

公开(公告)日：2014-02-25

申请号：US12388157

申请日：2009-02-18

Applicant: Yun-Kwon Park ,  Byeoung-Ju Ha ,  Byeong-Kwon Ju ,  Jae-Sung Rieh ,  In-Sang Song ,  Jin-Woo Lee ,  Jea-Shik Shin ,  Young-Min Park

Inventor： Yun-Kwon Park ,  Byeoung-Ju Ha ,  Byeong-Kwon Ju ,  Jae-Sung Rieh ,  In-Sang Song ,  Jin-Woo Lee ,  Jea-Shik Shin ,  Young-Min Park

IPC: H01L29/84

CPC classification number: H03H9/462 ,  B81B2201/0271 ,  B81C1/00142 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H03H3/0072 ,  H03H9/2463

Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.

Abstract translation: 提供了一种谐振器制造方法。 一种方法包括使用纳米压印技术在基板上提供彼此分离的多个电极图案; 以及形成连接到多个电极图案的延伸电极图案，并且形成跨越延伸的电极图案的纳米结构。 因此，纳米机电系统（NEMS）谐振器容易在纳米级制造。

公开(公告)号：US08624369B2

公开(公告)日：2014-01-07

申请号：US11844084

申请日：2007-08-23

Applicant: Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Jea-shik Shin ,  Seok-mo Chang ,  Seok-chul Yun

Inventor： Kuang-woo Nam ,  Yun-kwon Park ,  In-sang Song ,  Jea-shik Shin ,  Seok-mo Chang ,  Seok-chul Yun

IPC: H01L23/02

CPC classification number: H03H9/0547

Abstract: A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Abstract translation: 提供一种其中安装有平衡 - 不平衡转换器的平衡滤波器封装芯片及其制造方法。 平衡滤波器封装芯片包括器件基板; 安装在装置基板上的平衡过滤器; 层叠在所述器件基板的特定区域上的接合层; 封装基板，其具有形成在所述平衡滤波器上方的空腔，并且通过所述接合层与所述器件基板结合; 位于包装衬底上的某个区域上的平衡 - 不平衡转换器; 以及用于钝化平衡 - 不平衡变换器的绝缘体层。 因此，本发明可以减小元件尺寸并简化制造工艺。

公开(公告)号：US20130147320A1

公开(公告)日：2013-06-13

申请号：US13592821

申请日：2012-08-23

Applicant: Sang Uk Son ,  Duck Hwan KIM ,  Chul Soo KIM ,  Ho Soo Park ,  In Sang Song ,  Jea Shik Shin ,  Moon Chul Lee ,  Jing Cui

Inventor： Sang Uk Son ,  Duck Hwan KIM ,  Chul Soo KIM ,  Ho Soo Park ,  In Sang Song ,  Jea Shik Shin ,  Moon Chul Lee ,  Jing Cui

IPC: H01L41/053 ,  H01L41/22

CPC classification number: H03H9/02102 ,  H03H9/02149 ,  H03H9/1014 ,  H03H9/173 ,  H03H9/564 ,  H03H9/587 ,  Y10T29/42

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.

Abstract translation: 提供了一种体声波谐振器（BAWR）。 BAWR可以包括第一电极，设置在第一电极上的压电层，设置在压电层上的第二电极。 在各个方面，第一电极，压电层和第二电极中的至少一个由碳基材料形成。

公开(公告)号：US20130043568A1

公开(公告)日：2013-02-21

申请号：US13550186

申请日：2012-07-16

Applicant: In-Sang Song

Inventor： In-Sang Song

IPC: H01L23/552 ,  H01L23/48

CPC classification number: H01L24/97 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/0401

Abstract: A semiconductor device includes a substrate, a semiconductor chip, a first molding member and a metal layer. The substrate includes a first ground pad formed therein, the first ground pad having a first exposed surface exposed at a first surface of the substrate. The semiconductor chip is formed on the first surface of the substrate. The first molding member is formed on the first surface of the substrate and covers the semiconductor chip while not covering the first exposed surface. The metal layer covers the first molding member and extends to lateral surfaces of the substrate while contacting the first exposed surface.

Abstract translation: 半导体器件包括衬底，半导体芯片，第一模制构件和金属层。 衬底包括形成在其中的第一接地焊盘，第一接地焊盘具有暴露在衬底的第一表面处的第一暴露表面。 半导体芯片形成在基板的第一表面上。 第一模制构件形成在基板的第一表面上并且覆盖半导体芯片而不覆盖第一暴露表面。 金属层覆盖第一模制构件并且在与第一暴露表面接触的同时延伸到基板的侧表面。

公开(公告)号：US20120300412A1

公开(公告)日：2012-11-29

申请号：US13430160

申请日：2012-03-26

Applicant: In-Sang Song ,  Sang-Sub Song

Inventor： In-Sang Song ,  Sang-Sub Song

IPC: H05K7/00

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1435 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present disclosure provides a memory device and a fabricating method thereof. The memory device includes a substrate including a first metal layer formed therein, the first metal layer having at least a first surface with at least a first exposed portion of the first surface exposed at a lateral surface of the substrate, at least a first semiconductor chip formed on a top surface of the substrate, and a second metal layer surrounding the first semiconductor chip and extending to lateral surfaces of the substrate, at least a first portion of the second metal layer contacting the exposed surface of the first metal layer.

Abstract translation: 本公开提供了一种存储器件及其制造方法。 存储器件包括：衬底，其包括形成在其中的第一金属层，第一金属层至少具有第一表面，第一表面的至少第一暴露部分暴露在衬底的侧表面处;至少第一半导体芯片 形成在所述基板的顶表面上，以及第二金属层，所述第二金属层包围所述第一半导体芯片并且延伸到所述基板的侧表面，所述第二金属层的至少第一部分接触所述第一金属层的暴露表面。