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    InGaAIN-based semiconductor device
    2.
    发明授权
    InGaAIN-based semiconductor device 有权

    公开(公告)号：US12237423B2

    公开(公告)日：2025-02-25

    申请号：US14912702

    申请日：2014-08-28

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Hiroshi Fujioka ,  Atsushi Kobayashi

    IPC: H01L29/04 ,  H01L29/20 ,  H01L29/786

    Abstract: Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600° C., and a polycrystalline or amorphous InxGayAlzN layer was obtained. When composition expressed with a general expression InxGayAlzN (where x+y+z=1.0) falls within a range of 0.3≤x≤1.0 and 0≤z

    ELECTRONIC CIRCUIT
    3.
    发明申请
    ELECTRONIC CIRCUIT 有权

    公开(公告)号：US20250046365A1

    公开(公告)日：2025-02-06

    申请号：US18926916

    申请日：2024-10-25

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Satoshi Sugahara ,  Daiki Kitagata ,  Shuichiro Yamamoto

    IPC: G11C11/412 ,  G11C11/418 ,  G11C11/419 ,  G11C11/56 ,  G11C14/00 ,  H03K3/356

    Abstract: An electronic circuit includes a cell array including memory cells each including a bistable circuit that includes first and second inverter circuits, each having a first mode characterized by there being substantially no hysteresis in transfer characteristics and a second mode characterized by there being hysteresis in the transfer characteristics, and being switchable between the first and second modes, and a control circuit configured to, after powering off a first memory cell that store data that are not required to be retained, put the bistable circuit in a remaining second memory cell into the second mode, and supply a second power supply voltage that allows the bistable circuit in the second mode to retain data and is lower than a first power supply voltage supplied to the bistable circuit when data is read and/or written, to the bistable circuit in the second memory cell while maintaining the second mode.

    Microscopic body detection method and microscopic body detection device
    4.
    发明授权
    Microscopic body detection method and microscopic body detection device 有权

    公开(公告)号：US12196654B2

    公开(公告)日：2025-01-14

    申请号：US16496532

    申请日：2018-03-28

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Hiroyuki Noji ,  Takao Ono ,  Yoshihiro Minagawa

    IPC: G01N1/36 ,  B01L3/00 ,  G01N21/64 ,  G01N21/78 ,  G01N33/569 ,  G01N33/58

    Abstract: There is provided a method of detecting a microscopic body stored in a plurality of receptacles formed separately from each other. The method, which is provided as a technique for enclosing a to-be-detected substance such as nucleic acid, protein, virus, and cell by means of a simple operation in droplets of an extremely small volume and enabling highly sensitive detection, includes the steps of (1) introducing a solvent into a space between a lower layer part in which the receptacles are formed and an upper layer part facing a surface of the lower layer part in which surface the receptacles are formed, wherein the solvent contains the microscopic body; (2) introducing gas into the space to form a droplet of the solvent in the receptacles, wherein the droplet contains the microscopic body; and (3) detecting the microscopic body present in the droplet optically, electrically, and/or magnetically.

    Thermoelectric conversion device
    5.
    发明授权
    Thermoelectric conversion device 有权

    公开(公告)号：US12185628B2

    公开(公告)日：2024-12-31

    申请号：US18276326

    申请日：2022-02-15

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Satoshi Sugahara ,  Hayato Kumagai

    IPC: H10N10/17 ,  H10N10/82

    Abstract: A thermoelectric conversion device includes thermoelectric layers and connection layers that are alternately provided in a first direction parallel to surfaces of the thermoelectric layers, and are connected to each other, thermally conductive layers that are connected to the respective connection layers, and extends in a second direction intersecting the surfaces, a first insulating layer that has a smaller thermal conductivity than the thermally conductive layers, and a second insulating layer that has a smaller thermal conductivity than the first insulating layer, is provided between the first insulating layer and the thermoelectric layers, and has a thickness equal to or greater than ¼ of a distance between an end of the thermally conductive layer at a side of one of the thermoelectric layers and a center of another of the connection layers in the first direction, the thermally conductive layers penetrating through the first and second insulating layers.

    Microwave photon control device, microwave photon transmitter, microwave photon receiver, microwave photon repeater, and quantum computer
    6.
    发明授权
    Microwave photon control device, microwave photon transmitter, microwave photon receiver, microwave photon repeater, and quantum computer 有权

    公开(公告)号：US12184339B2

    公开(公告)日：2024-12-31

    申请号：US17790819

    申请日：2020-12-28

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Shingo Kono ,  Yasunobu Nakamura

    IPC: H04B10/70 ,  G06N10/40 ,  G21K1/00

    Abstract: A microwave photon control device includes a first qubit and a second qubit that are connected in parallel to a waveguide through which microwave photons propagate, and a direct coupling between the first qubit and the second qubit. An interval between the first qubit and the second qubit is (¼+n/2) times as long as a wavelength of microwave photons (where n is an integer equal to or larger than 0). A quantum entangled state is formed between the first qubit and the second qubit. The direct coupling cancels out a coupling via the waveguide between the first qubit and the second qubit. By a relaxation rate of the first qubit and the second qubit, and a phase of the quantum entangled state being controlled, the microwave photon control device operates while switching between a first operation mode, a second operation mode, and a third operation mode.

    QUANTUM COMPUTATION CONTROLLER, QUANTUM COMPUTER AND QUANTUM COMPUTATION CONTROL METHOD
    7.
    发明申请
    QUANTUM COMPUTATION CONTROLLER, QUANTUM COMPUTER AND QUANTUM COMPUTATION CONTROL METHOD 有权

    公开(公告)号：US20240386303A1

    公开(公告)日：2024-11-21

    申请号：US18557838

    申请日：2022-02-18

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Yasunobu NAKAMURA ,  Yutaka TABUCHI ,  Shuhei TAMATE

    IPC: G06N10/40 ,  G06N10/70

    Abstract: A quantum computation controller according to one embodiment has a control signal generator, an observation unit that receives an observation signal indicating the state of each qubit and a qubit module. The qubit module has a qubit substrate on which a plurality of qubits are arranged, a control circuit, an observation circuit, and a signal processing circuit. The qubits are grouped into a plurality of groups. The control signal generator generates a control signal for performing a first operation, a control signal for performing a second operation and an instruction signal. The control circuit splits the control signal into groups and controls the sending of the control signal. The observation circuit observes the state of each qubit on which the first operation or the second operation has been performed. The signal processing circuit sends the observation signal of each qubit to the observation circuit.

    Compound and polymer compound containing the compound
    8.
    发明授权
    Compound and polymer compound containing the compound 有权

    公开(公告)号：US12145938B2

    公开(公告)日：2024-11-19

    申请号：US18063331

    申请日：2022-12-08

    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

    Inventor： Shohei Saito ,  Hiroshi Yabu ,  Hiroya Abe

    IPC: C07D487/04 ,  C07D313/14 ,  C07D471/06

    Abstract: Provided is a compound having higher fluorescence quantum yield and higher optical stability than a conventional FLAP and a polymer compound containing the compound. A: seven or eight-membered ring structure, Y1, Y2, Y3: halogen atom or the like, a1: number of Y1, a2: number of Y2, B: number of Y3, 0≤m and n≤3: when 1≤m≤3, Y1 may be substituted with a structure portion defined by m, when 1≤n≤3, Y2 may be substituted with a structure portion defined by n, and B1, B2: Formulas (2-1) to (2-3): C1, C2, C3: structure containing a cyclic hydrocarbon compound, D1, D2, D3: substructure that inhibits aggregation, E1, E2, E3: polymerizable substructure, Z1: hydrogen atom or the like, c: number of substituent groups Z1, Z2, Z3: hydrogen atom or the like, and may form a ring with C2.

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