-
公开(公告)号：US12250801B2
公开(公告)日：2025-03-11
申请号：US18284720
申请日：2022-08-02
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Byeong Jin Park , Tae Hoon Kim , Sang Bok Lee , Byung Mun Jung , Seung Han Ryu , Yu Kyung Han , Suk Jin Kwon
Abstract: The present invention provides an electromagnetic wave-absorbing composite material and a manufacturing method therefor, the electromagnetic wave-absorbing composite material comprising: a polymer composite including a refractive index-adjusting material therein; and a plurality of conductive wires formed on at least one surface of the polymer composite, wherein electromagnetic waves reflected in a matching frequency (f) range derived through Mathematical Formulas 1 to 3 described in the present invention are 0.2 dB or less.
-
公开(公告)号：US20240055266A1
公开(公告)日：2024-02-15
申请号：US18244863
申请日：2023-09-11
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Young Jo PARK , Ha Neul KIM , Jae Woong KO , Mi Ju KIM , Hyeon Myeong OH
IPC: H01L21/3065 , H01J37/32 , B22F3/10
CPC classification number: H01L21/3065 , H01J37/32009 , B22F3/10 , H01J2237/334
Abstract: Provided is a method of using a plasma etching apparatus in semiconductor manufacturing, the method including using a plasma etching apparatus in semiconductor manufacturing, the plasma etching apparatus comprising a component including a composite sintered body therein, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance. In addition, provided is a method of reducing etching by plasma in a plasma etching apparatus during semiconductor manufacturing, the method including providing a plasma etching apparatus for manufacturing a semiconductor including a component including a composite sintered body, wherein the composite sintered body comprises 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO), and wherein the component has plasma resistance.
-
3.发明授权公开(公告)号：US11873552B2
公开(公告)日：2024-01-16
申请号：US16750820
申请日：2020-01-23
Applicant: Korea Institute of Materials Science
Inventor： Sung-Gyu Park , Do-Geun Kim , Seung-Hoon Lee , Dong-Ho Kim
CPC classification number: C23C14/046 , B82Y20/00 , C23C14/028 , C23C14/16 , C23C14/20 , C23C14/28 , C23C14/3442 , G02B5/008
Abstract: A substrate including plasmonic continuous film with curved surface and a method for manufacturing the same. More particularly, a substrate for an ultrasensitive spectroscopic sensor includes bowl-shaped plasmonic curved nanodimples and spiked plasmonic nanotips formed at contact points between the nanodimples at the same time, thereby greatly increasing the total volume of hotspots and being capable of concentrating and analyzing an extremely small amount of a sample.
-
公开(公告)号：US11841325B2
公开(公告)日：2023-12-12
申请号：US17242661
申请日：2021-04-28
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Sung-gyu Park , Dong-ho Kim , Ho-sang Jung , Mijeong Kang , Iris Baffour Ansah
CPC classification number: G01N21/658 , G01J3/44 , B82Y10/00 , B82Y30/00 , G01N2021/655
Abstract: There are provided a substrate including a three-dimensional (3D) nanoplasmonic composite structure, a method of fabricating the same, and a rapid analysis method using the same. More specifically, there are provided a substrate including a 3D plasmonic-nanostructure/target-molecule composite thin film composed of an analyte and a plasmonic nanostructure and formed by applying a voltage to a plasmonic electrode in an electrochemical cell including an analyte and a metal precursor to induce an analyte molecule on the electrode and performing electrochemical deposition (or electrodeposition), a method of fabricating the same, and a rapid analysis method using the same.
-
公开(公告)号：US20230271173A1
公开(公告)日：2023-08-31
申请号：US18007064
申请日：2020-10-19
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Joon Hwan CHOI , Giyeong KIM
CPC classification number: B01J35/0006 , B01J35/10 , B01J35/0033 , B01J21/04 , B01J23/44 , B01J37/0228
Abstract: The present invention provides a catalyst module for removing harmful gas, wherein an oxidation reaction or reduction reaction of harmful gas is carried out in a self-heating heating carrier. According to an embodiment of the present invention, the catalyst module for removing harmful gas comprises: a heating carrier composed of an electrically heatable heating body, including one or more flow channels inside, and having a porous structure with pores; and a catalyst region formed on at least a portion of the surface of the heating carrier including the flow channels and containing a catalyst material for promoting a decomposition reaction of harmful gas passing through the flow channels, wherein the catalyst region comprises: a first catalyst layer having a first catalyst material loading amount in the pores of the heating carrier; and a second catalyst layer applied on the inner surface of the heating carrier.
-
Patent Agency Ranking
公开(公告)号：US20230119973A1
公开(公告)日：2023-04-20
申请号：US17831705
申请日：2022-06-03
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Chang-su KIM
Abstract: The present disclosure relates to an antimicrobial agent and an antimicrobial resin composition comprising the same. More particularly, the present disclosure relates to an antimicrobial agent that has excellent antimicrobial activity even when a small amount is added and may minimize the influence on physical properties of an applied product such as an antimicrobial film, an antimicrobial resin composition comprising the same, and methods of preparing the antimicrobial agent and the antimicrobial resin composition.
-
公开(公告)号：US20220389606A1
公开(公告)日：2022-12-08
申请号：US17765101
申请日：2020-09-25
Applicant: Korea Institute Of Materials Science
Inventor： Seung-hoe CHOE , Myeongjin HAN , Man KIM , Bung-uk YOO , Kyun-hwan LEE , Joo-yul LEE , Younghwon KWAN
Abstract: Provided are a measurement method, an electrochemical measuring cell, and a measuring device which are capable of directly and continuously measuring the concentration of monovalent copper ions (Cu+), 3-mercaptopropyl sulfonate (MPS), or Cu+-MPS, which is a plating additive breakdown product, in a plating solution during a copper plating process.
-
公开(公告)号：US20250109480A1
公开(公告)日：2025-04-03
申请号：US18717554
申请日：2021-12-10
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Sung-hoon JUNG , Do-geun KIM , Seung-hoon LEE , Joo-young PARK , Eun-yeon BYEON , Jun-yeong YANG
Abstract: The present disclosure provides a low dielectric polymer substrate and a preparation method thereof. More specifically, the present disclosure provides a low dielectric polymer substrate to which metal or ceramic may be deposited with high adhesion without a separate adhesive layer through surface modification of a polymer substrate and a preparation method thereof.
-
公开(公告)号：US11858820B2
公开(公告)日：2024-01-02
申请号：US16764768
申请日：2018-11-15
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Chul Jin Choi , Ping Zhan Si , Ji Hoon Park , Hui Dong Qian
IPC: C01B32/914 , C01B32/182 , C01B32/158 , C01B32/20 , C01G45/00 , C22C22/00
CPC classification number: C01B32/914 , C01B32/158 , C01B32/182 , C01B32/20 , C01G45/00 , C22C22/00 , C01P2002/72 , C01P2006/42
Abstract: A manganese carbide (Mn4C) magnetic material and a production method therefor are provided. According to one embodiment, the saturation magnetization of the Mn4C magnetic material increases with increasing temperature, and thus the Mn4C magnetic material is applicable to fields in which thermally induced magnetization reduction is critical.
-
公开(公告)号：US20230416877A1
公开(公告)日：2023-12-28
申请号：US18035898
申请日：2021-11-09
Applicant: KOREA INSTITUTE OF MATERIALS SCIENCE
Inventor： Jeong Hyeon DO , In Soo KIM , Joong Eun JUNG , Baig Gyu CHOI , Woo Young SEOK , Yu Hwa LEE
IPC: C22C19/05
CPC classification number: C22C19/057
Abstract: Provided is a super-heat-resistant alloy consisting of aluminum (Al): 4.0 wt % to 5.2 wt %, cobalt (Co): 1.0 wt % to 10.0 wt %, chromium (Cr): 5.0 wt % to 8.0 wt %, molybdenum (Mo): 0.5 wt % to 2.0 wt %, tantalum (Ta): 7.0 wt % to 10.0 wt %, titanium (Ti): 0 wt %
-
-
-
-
-
-
-
-
-
Search Results
33
records
(took 0.022 seconds)
