MODULATION-DOPING-BASED HIGH MOBILITY ATOMIC LAYER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20250169099A1

    公开(公告)日:2025-05-22

    申请号:US18682728

    申请日:2022-08-09

    Abstract: Disclosed are a high-mobility atomic layer semiconductor device based on modulation doping and a method for fabricating the same, which prevent a charge scattering phenomenon caused by ionized impurities by modulation doping dopants such that the dopants are spatially separated from a channel layer of an atomic layer semiconductor device having an atomic layer semiconductor heterojunction structure band-aligned. According to an embodiment of the present disclosure, a high-mobility atomic layer semiconductor device based on modulation doping includes a substrate, an atomic layer semiconductor heterojunction structure band-aligned in type I or type II and including a channel layer allowing movement of an electron and a doping layer, wherein the channel layer and the doping layer are stacked on the substrate, and a dopant formed on the doping layer and including a material for supplying an electron or a hole to the channel layer. The dopant is doped while being spatially separated from the channel layer through the doping layer, instead of being directly doped into the channel layer.

    Electronic device and memory protection method using same

    公开(公告)号:US12301717B2

    公开(公告)日:2025-05-13

    申请号:US18172747

    申请日:2023-02-22

    Abstract: An electronic device is provided. The electronic device includes a memory and a processor, the processor allocates first and second address spaces (AS) to the memory in rich execution environment (REE) when detecting a request to write data, writes the data to the first AS and detect access to the second address space in the REE, configures access permission of a first user virtual memory AS (VMAS), mapped to the first address space, in the REE so that write access is deactivated by a trusted environment manager when detecting access to the second AS, configures access permission of a second user VMAS, mapped to the second AS, in the REE so that read access is activated and write access is deactivated, and configures access permission of a first kernel VMAS, mapped to the first AS, in the REE so that write access is deactivated by the trusted environment manager.

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