中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

51 records (took 0.024 seconds)

    CMOS dual metal gate semiconductor device
    1.
    发明授权
    CMOS dual metal gate semiconductor device 有权
    CMOS双金属栅极半导体器件

    公开(公告)号：US08836038B2

    公开(公告)日：2014-09-16

    申请号：US12883241

    申请日：2010-09-16

    Applicant: Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

    Inventor： Yong-Tian Hou ,  Peng-Fu Hsu ,  Jin Ying ,  Kang-Cheng Lin ,  Kuo-Tai Huang ,  Tze-Liang Lee

    IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66

    CPC classification number: H01L21/823842 ,  H01L21/28044 ,  H01L21/28088 ,  H01L21/823835 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/7833 ,  H01L29/7843

    Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a first MOS device of a first conductivity type and a second MOS device of a second conductivity type opposite the first conductivity type. The first MOS device includes a first gate dielectric on a semiconductor substrate; a first metal-containing gate electrode layer over the first gate dielectric; and a silicide layer over the first metal-containing gate electrode layer. The second MOS device includes a second gate dielectric on the semiconductor substrate; a second metal-containing gate electrode layer over the second gate dielectric; and a contact etch stop layer having a portion over the second metal-containing gate electrode layer, wherein a region between the portion of the contact etch stop layer and the second metal-containing gate electrode layer is substantially free from silicon.

    Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括第一导电类型的第一MOS器件和与第一导电类型相反的第二导电类型的第二MOS器件。 第一MOS器件包括在半导体衬底上的第一栅极电介质; 在所述第一栅极电介质上的第一含金属的栅电极层; 以及位于第一含金属栅电极层上的硅化物层。 第二MOS器件包括半导体衬底上的第二栅极电介质; 在所述第二栅极电介质上方的第二含金属的栅电极层; 以及具有位于所述第二含金属栅电极层上的部分的接触蚀刻停止层，其中所述接触蚀刻停止层的所述部分和所述第二含金属栅电极层之间的区域基本上不含硅。

    Method for forming semiconductor structure having protection layer for preventing laser damage
    2.
    发明授权
    Method for forming semiconductor structure having protection layer for preventing laser damage 有权
    用于形成具有用于防止激光损伤的保护层的半导体结构的方法

    公开(公告)号：US08541264B2

    公开(公告)日：2013-09-24

    申请号：US13548039

    申请日：2012-07-12

    Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

    Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

    IPC: H01L21/82

    CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

    Abstract translation: 提供一种用于形成半导体结构的方法，以防止用于吹送形成在半导体衬底上的金属层上的至少一个熔丝的能量引起对结构的损坏。 半导体结构包括器件，保护环，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。

    PROTECTION LAYER FOR PREVENTING LASER DAMAGE ON SEMICONDUCTOR DEVICES
    4.
    发明申请
    PROTECTION LAYER FOR PREVENTING LASER DAMAGE ON SEMICONDUCTOR DEVICES 有权
    用于防止半导体器件激光损伤的保护层

    公开(公告)号：US20120276732A1

    公开(公告)日：2012-11-01

    申请号：US13548039

    申请日：2012-07-12

    Applicant: Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

    Inventor： Jian-Hong Lin ,  Kang-Cheng Lin ,  Tzu-Li Lee

    IPC: H01L21/768

    CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.

    Abstract translation: 提供一种用于形成半导体结构的方法，以防止用于吹送形成在半导体衬底上的金属层上的至少一个熔丝的能量引起对结构的损坏。 半导体结构包括器件，保护环，保护环和至少一个保护层。 该器件构造在保险丝下方的半导体衬底上。 围绕熔丝的密封环构造在设备和保险丝之间的至少一个金属层上，以将能量限制在其中。 保护层形成在密封环内，在设备和保险丝之间的至少一个金属层上，用于屏蔽器件不会直接暴露于能量。

    SILICON SOLAR CELL
    5.
    发明申请
    SILICON SOLAR CELL 审中-公开
    硅太阳能电池

    公开(公告)号：US20110232741A1

    公开(公告)日：2011-09-29

    申请号：US13028503

    申请日：2011-02-16

    Applicant: TING FANG ,  KANG-CHENG LIN

    Inventor： TING FANG ,  KANG-CHENG LIN

    IPC: H01L31/0224

    CPC classification number: H01L31/02245 ,  H01L31/068 ,  Y02E10/547

    Abstract: The present invention discloses a silicon solar cell including a silicon crystal, an emitter, a conductive layer, and a first metal electrode. The silicon crystal has at least one through hole formed thereon. The emitter covers at least the silicon crystal and an inner surface of the through hole on the silicon crystal; the conductive layer covers at least a portion of the emitter that is located on the inner surface of the through hole; and the first metal electrode is located in the through hole on the silicon crystal and is electrically connected at least to the conductive layer.

    Abstract translation: 本发明公开了一种包括硅晶体，发射极，导电层和第一金属电极的硅太阳能电池。 硅晶体具有形成在其上的至少一个通孔。 发射极至少覆盖硅晶体和硅晶体上的通孔的内表面; 导电层覆盖位于通孔内表面上的发射体的至少一部分; 并且第一金属电极位于硅晶体的通孔中，并且至少与导电层电连接。

    NOVEL HIGH-K METAL GATE STRUCTURE AND METHOD OF MAKING
    7.
    发明申请
    NOVEL HIGH-K METAL GATE STRUCTURE AND METHOD OF MAKING 审中-公开
    新型高K金属结构及其制备方法

    公开(公告)号：US20100044804A1

    公开(公告)日：2010-02-25

    申请号：US12427222

    申请日：2009-04-21

    Applicant: Chien-Hao Chen ,  Yong-Tian Hou ,  Kang-Cheng Lin ,  Kuo-Tai Huang

    Inventor： Chien-Hao Chen ,  Yong-Tian Hou ,  Kang-Cheng Lin ,  Kuo-Tai Huang

    IPC: H01L29/78 ,  H01L21/28

    CPC classification number: H01L21/28088 ,  H01L21/28194 ,  H01L21/28247 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

    Abstract: The present disclosure provides a semiconductor device that includes a semiconductor substrate, a transistor formed in the substrate, the transistor including a high-k gate dielectric formed over the substrate, the high-k gate dielectric having a first length measured from one sidewall to the other sidewall of the high-k gate dielectric, and a metal gate formed over the high-k gate dielectric, the metal gate having a second length measured from one sidewall to the other sidewall of the metal gate, the second length being smaller than the first length.

    Abstract translation: 本公开提供了一种半导体器件，其包括半导体衬底，形成在衬底中的晶体管，晶体管包括形成在衬底上的高k栅极电介质，高k栅极电介质具有从一个侧壁到 高k栅极电介质的另一个侧壁和形成在高k栅极电介质上的金属栅极，金属栅极具有从金属栅极的一个侧壁到另一侧壁测量的第二长度，第二长度小于 第一长。

Patent Agency Ranking