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1.发明申请RF-BIASED CAPACITIVELY-COUPLED ELECTROSTATIC (RFB-CCE) PROBE ARRANGEMENT FOR CHARACTERIZING A FILM IN A PLASMA PROCESSING CHAMBER 有权用于表征等离子体处理室中的薄膜的RF偏置电容耦合静电（RFB-CCE）探针布置公开(公告)号：US20100007362A1
公开(公告)日：2010-01-14
申请号：US12498955
申请日：2009-07-07
Applicant: Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
Inventor： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
CPC classification number: H01J37/32935 , H01L21/67069 , H01L22/14 , Y10T29/49004
Abstract: A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
Abstract translation: 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时，将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值，初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线，其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值，则使用初始电阻值和初始电容来表征沉积膜。
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2.发明申请公开(公告)号：US20100332201A1
公开(公告)日：2010-12-30
申请号：US12826575
申请日：2010-06-29
Applicant: Luc Albarede , Eric Pape , Vijayakumar C. Venugopal , Brian D. Choi
Inventor： Luc Albarede , Eric Pape , Vijayakumar C. Venugopal , Brian D. Choi
CPC classification number: H01J37/32935 , H01J37/32477
Abstract: A method for assessing health status of a processing chamber is provided. The method includes executing a recipe. The method also includes receiving processing data from a set of sensors during execution of the recipe. The method further includes analyzing the processing data utilizing a set of multi-variate predictive models. The method yet also includes generating a set of component wear data values. The method yet further includes comparing the set of component wear data values against a set of useful life threshold ranges. The method moreover includes generating a warning if the set of component wear data values is outside of the set of useful life threshold ranges.
Abstract translation: 提供了一种用于评估处理室的健康状况的方法。 该方法包括执行食谱。 该方法还包括在执行配方期间从一组传感器接收处理数据。 该方法还包括利用一组多变量预测模型分析处理数据。 该方法还包括生成一组组件磨损数据值。 该方法还包括将组件磨损数据值集合与一组使用寿命阈值范围进行比较。 该方法还包括如果组件磨损数据值的集合超出了使用寿命阈值范围的集合，则产生警告。
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3.发明申请ARRANGEMENT FOR IDENTIFYING UNCONTROLLED EVENTS AT THE PROCESS MODULE LEVEL AND METHODS THEREOF 有权在过程模块级别识别非受控事件的安排及其方法公开(公告)号：US20100332014A1
公开(公告)日：2010-12-30
申请号：US12826568
申请日：2010-06-29
Applicant: Luc Albarede , Vijayakumar C. Venugopal
Inventor： Luc Albarede , Vijayakumar C. Venugopal
IPC: G06F19/00
CPC classification number: H01J37/32935 , G05B2219/31202
Abstract: A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
Abstract translation: 提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。 该方法包括将数据集与一组标准（原位快速瞬变事件）进行比较的一组传感器，以确定第一数据集是否包括潜在的原位快速瞬变事件。 如果第一数据集包括潜在的原位快速瞬变事件，则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。 该方法还包括将电特征与一组存储的电弧特征进行比较。 如果确定匹配，则该方法还包括将电特征分类为第一原位快速瞬时事件，并且基于预定义的一组阈值范围来确定第一原位快速瞬时事件的严重性级别。
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Patent Agency Ranking
公开(公告)号：US08894804B2
公开(公告)日：2014-11-25
申请号：US12747491
申请日：2008-12-12
Applicant: Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
Inventor： Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
CPC classification number: H01J37/32935
Abstract: An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.
Abstract translation: 提供了用于检测等离子体无约束事件的等离子体反应器内的布置。 该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。 传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。 传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。 该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。
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5.发明授权Arrangement for identifying uncontrolled events at the process module level and methods thereof 有权用于在过程模块级别识别不受控制的事件的安排及其方法公开(公告)号：US08618807B2
公开(公告)日：2013-12-31
申请号：US12826568
申请日：2010-06-29
Applicant: Luc Albarede , Vijayakumar C Venugopal
Inventor： Luc Albarede , Vijayakumar C Venugopal
IPC: G01R31/00
CPC classification number: H01J37/32935 , G05B2219/31202
Abstract: A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.
Abstract translation: 提供了一种用于在衬底处理期间检测处理室内的原位快速瞬变事件的方法。 该方法包括将数据集与一组标准（原位快速瞬变事件）进行比较的一组传感器，以确定第一数据集是否包括潜在的原位快速瞬变事件。 如果第一数据集包括潜在的原位快速瞬变事件，则该方法还包括保存在潜在的原位快速瞬变事件发生的时间段内发生的电特征。 该方法还包括将电特征与一组存储的电弧特征进行比较。 如果确定匹配，则该方法还包括将电特征分类为第一原位快速瞬时事件，并且基于预定义的一组阈值范围来确定第一原位快速瞬变事件的严重性级别。
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6.发明授权公开(公告)号：US08473089B2
公开(公告)日：2013-06-25
申请号：US12826575
申请日：2010-06-29
Applicant: Luc Albarede , Eric Pape , Vijayakumar C Venugopal , Brian D Choi
Inventor： Luc Albarede , Eric Pape , Vijayakumar C Venugopal , Brian D Choi
IPC: G06F19/00
CPC classification number: H01J37/32935 , H01J37/32477
Abstract: A method for assessing health status of a processing chamber is provided. The method includes executing a recipe. The method also includes receiving processing data from a set of sensors during execution of the recipe. The method further includes analyzing the processing data utilizing a set of multi-variate predictive models. The method yet also includes generating a set of component wear data values. The method yet further includes comparing the set of component wear data values against a set of useful life threshold ranges. The method moreover includes generating a warning if the set of component wear data values is outside of the set of useful life threshold ranges.
Abstract translation: 提供了一种用于评估处理室的健康状况的方法。 该方法包括执行食谱。 该方法还包括在执行配方期间从一组传感器接收处理数据。 该方法还包括利用一组多变量预测模型分析处理数据。 该方法还包括生成一组组件磨损数据值。 该方法还包括将组件磨损数据值集合与一组使用寿命阈值范围进行比较。 该方法还包括如果组件磨损数据值的集合超出了使用寿命阈值范围的集合，则产生警告。
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7.发明授权RF-biased capacitively-coupled electrostatic (RFB-CCE) probe arrangement for characterizing a film in a plasma processing chamber 有权用于表征等离子体处理室中的膜的RF偏置电容耦合静电（RFB-CCE）探针装置公开(公告)号：US08164353B2
公开(公告)日：2012-04-24
申请号：US12498955
申请日：2009-07-07
Applicant: Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
Inventor： Jean-Paul Booth , Luc Albarede , Jung Kim , Douglas Keil
CPC classification number: H01J37/32935 , H01L21/67069 , H01L22/14 , Y10T29/49004
Abstract: A method for characterizing deposited film on a substrate within a processing chamber during processing is provided. The method includes determining voltage-current characteristic for a probe head when measuring capacitor is set at a first capacitance value. The method also includes applying RF train to the probe head when measuring capacitor is set at a capacitance value greater than first capacitance value. The method further includes providing an initial resistance value and an initial capacitance value for the deposited film. The method yet also includes employing initial resistance value, initial capacitance value, and voltage-current characteristic to generate simulated voltage-time curve. The method yet further includes determining measured voltage-time curve, which represents potential drop across the deposited film for one RF train. The method more over includes comparing the two curves. If the difference is less than predefined threshold, employ initial resistance value and initial capacitance for characterizing the deposited film.
Abstract translation: 提供了一种在处理期间在处理室内的基板上表征沉积膜的方法。 该方法包括当测量电容器被设置在第一电容值时确定探头的电压 - 电流特性。 该方法还包括当测量电容器被设置为大于第一电容值的电容值时，将RF串施加到探头。 该方法还包括为沉积膜提供初始电阻值和初始电容值。 该方法还包括采用初始电阻值，初始电容值和电压 - 电流特性来产生模拟电压 - 时间曲线。 该方法还包括确定测量的电压时间曲线，其表示用于一个RF火车的沉积膜的电位降。 更多的方法包括比较两条曲线。 如果差值小于预定阈值，则使用初始电阻值和初始电容来表征沉积膜。
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公开(公告)号：US20110128017A1
公开(公告)日：2011-06-02
申请号：US12747491
申请日：2008-12-12
Applicant: Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
Inventor： Jean-Paul Booth , Alexei Marakhtanov , Rajinder Dhindsa , Luc Albarede , Seyed Jafar Jafarian-Tehrani
IPC: G01R27/26
CPC classification number: H01J37/32935
Abstract: An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.
Abstract translation: 提供了用于检测等离子体无约束事件的等离子体反应器内的布置。 该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。 传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。 传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。 该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。
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