MEMS MOTION SENSOR AND METHOD OF MANUFACTURING

    公开(公告)号:US20230304797A9

    公开(公告)日:2023-09-28

    申请号:US14622548

    申请日:2015-02-13

    CPC classification number: G01C19/5712 G01C25/00

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    Multi-mass MEMS motion sensor
    2.
    发明授权

    公开(公告)号:US11674803B2

    公开(公告)日:2023-06-13

    申请号:US15315894

    申请日:2015-01-12

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    3D MEMS MAGNETOMETER AND ASSOCIATED METHODS
    4.
    发明申请

    公开(公告)号:US20170363694A1

    公开(公告)日:2017-12-21

    申请号:US15534702

    申请日:2015-12-02

    CPC classification number: G01R33/0286 B81B2201/02 G01R33/0206

    Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

    MEMS PRESSURE SENSOR
    5.
    发明申请
    MEMS PRESSURE SENSOR 审中-公开
    MEMS压力传感器

    公开(公告)号:US20170030788A1

    公开(公告)日:2017-02-02

    申请号:US15302731

    申请日:2015-01-15

    Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent is extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps, to form a differential pressure sensor.

    Abstract translation: 本发明提供一种MEMS压力传感器及其制造方法。 压力由顶盖晶片,MEMS晶片和底盖晶片形成。 MEMS晶片包括框架和膜,框架限定空腔。 膜通过框架悬挂在空腔上。 底盖晶片封闭空腔。 顶盖晶片具有限定了膜的电容间隙的凹部。 顶盖晶片包括位于膜上方的顶盖电极,并与膜一起形成电容器以检测膜的偏转。 顶盖晶片上的电触点连接到顶盖电极。 通气孔从传感器的外部延伸到空腔或电容间隙。 压力传感器可以包括两个空腔和两个电容间隙,以形成差压传感器。

    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF
    6.
    发明申请
    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF 审中-公开
    MEMS组件及其水平制造方法

    公开(公告)号:US20160229685A1

    公开(公告)日:2016-08-11

    申请号:US15024711

    申请日:2014-09-19

    Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

    Abstract translation: 提供MEMS和制造MEMS部件的方法。 该方法包括提供包括顶盖晶片,MEMS晶片和任选的底盖晶片的MEMS晶片叠层。 MEMS晶片具有图案化的MEMS结构。 MEMS晶片和盖晶片包括形成在晶片堆叠内延伸的绝缘导电路径的绝缘导电沟道。 晶片堆叠结合到在其顶侧上具有电触点的集成电路晶片,使得绝缘导电路径从集成电路晶片延伸到顶盖晶片的外侧。 形成顶盖晶片外侧的电触点,并与顶盖晶片的相应的绝缘导电通道电连接。 然后将MEMS晶片堆叠和集成电路晶片切割成具有容纳在其中的相应密封室和MEMS结构的部件。

    MEMS PRESSURE SENSOR
    7.
    发明申请

    公开(公告)号:US20200232860A1

    公开(公告)日:2020-07-23

    申请号:US16694607

    申请日:2019-11-25

    Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.

    Integrated MEMS system
    8.
    发明授权

    公开(公告)号:US10214414B2

    公开(公告)日:2019-02-26

    申请号:US15206935

    申请日:2016-07-11

    Abstract: An integrated MEMS system having a MEMS chip, including a MEMS transducer, and at least one IC chip, including MEMS processing circuitry, and additional circuitry to process electrical signals. The MEMS chip can include first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducer and the IC chip, for processing; and the second conducting pathways can extend through the entire thickness of the MEMS chip, to conduct electrical signals to the IC chip, to be processed by additional circuitry.

    MEMS COMPONENTS AND METHOD OF WAFER-LEVEL MANUFACTURING THEREOF

    公开(公告)号:US20180362330A9

    公开(公告)日:2018-12-20

    申请号:US15024711

    申请日:2014-09-19

    Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

    3D MEMS DEVICE WITH HERMETIC CAVITY
    10.
    发明申请

    公开(公告)号:US20180002163A1

    公开(公告)日:2018-01-04

    申请号:US15543700

    申请日:2016-01-14

    Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

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